Publikationen
2024 Guiot E., Allibert F., Leib J., Becker T., Drouin A., Schwarzenbach W.:SiC engineered substrate: increasing SiC MOSFETs current density from device to module level 39th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2024 10.1109/APEC48139.2024.10509052 Cornigli D. , Schlichting H. , Becker T. , Larcher L. , Erlbacher T. , Pešić M. :Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements Solid State Phenomena 361 2024 ), S. 93-98 ISSN: 1012-0394 10.4028/p-jbV5Vq Ghazal R. :Analyse und Modellierung mikrospektrometrischer Messungen an Dünnschichtsystemen unter Einsatz von Polarisationsoptiken 2024 )Hack M. , Seidel L. , Wanitzek M. , Oehme M. , Schulze J. , Schwarz D. :Utilizing direct Zener tunneling in Germanium for cryogenic quantum applications Materials Science in Semiconductor Processing 172 2024 ), Art.Nr.: 108057 ISSN: 1369-8001 10.1016/j.mssp.2023.108057 Hoffmeister D. , Finger S. , Fiedler L. , Ma TC. , Körner A. , Zlatar M. , Fritsch B. , Bodnar KW. , Carl S. , Götz A. , Zubiri BA. , Will J. , Spiecker E. , Cherevko S. , Freiberg A. , Mayrhofer K. , Thiele S. , Hutzler A. , van Pham C. :Photodeposition-Based Synthesis of TiO2@IrOx Core–Shell Catalyst for Proton Exchange Membrane Water Electrolysis with Low Iridium Loading Advanced Science 2024 )ISSN: 2198-3844 10.1002/advs.202402991 Joch D. , Lang T. , Sanctis S. , Jank MP. :Simulation-Guided Analysis towards Trench Depth Optimization for Enhanced Flexibility in Stretch-Free, Shape-Induced Interconnects for Flexible Electronics Materials 17 2024 ), Art.Nr.: 3849 ISSN: 1996-1944 10.3390/ma17153849 Joch D. , Lehninger D. , Sunil A. , Sanctis S. , Lang T. , Zeltner J. , Wartenberg P. , Seidel K. , Jank MP. :Precise Compensation of Device Variability in IGZO-based Ferroelectric ThinFilm Transistors for Enhanced Transparent Display Performance International Symposium, Seminar, and Exhibition, Display Week 2024 (San Jose, CA, USA 12. Mai 2024 - 17. Mai 2024 )In: Digest of Technical Papers - SID International Symposium 2024 10.1002/sdtp.17463 Ley M. , Dick J. , Schulze J. :Ab Initio Calculations to Determine Tunneling Parameters for 4H-SiC Tunneling Field-Effect Transistor Simulations 47th ICT and Electronics Convention, MIPRO 2024 (Opatija, HRV 20. Mai 2024 - 24. Mai 2024 )In: Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Dragan Cisic, Pavle Ergovic, Tihana Galinac Grbac, Vera Gradisnik, Stjepan Gros, Andrej Jokic, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Marko Svaco, Edvard Tijan, Neven Vrcek, Boris Vrdoljak (Hrsg.): 2024 47th ICT and Electronics Convention, MIPRO 2024 - Proceedings 2024 10.1109/MIPRO60963.2024.10569785 Okeil H. , Erlbacher T. , Wachutka G. :Very High Temperature Hall Sensors in a Wafer-Scale 4H-SiC Technology Advanced Materials Technologies 2024 )ISSN: 2365-709X 10.1002/admt.202400046 Popp L. , Kampe P. , Fritsch B. , Hutzler A. , Poller MJ. , Albert J. , Schühle P. :Supported Ruthenium Phosphide as a Promising Catalyst for Selective Hydrogenation of Sugars European Journal of Inorganic Chemistry 2024 )ISSN: 1434-1948 10.1002/ejic.202400117 Schimmel S. , Tomida D. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. :Transition from etch-back to growth conditions during ammonothermal growth of GaN – a transient numerical model for convective flow and temperature distribution in a retrograde solubility configuration GaN Marathon (Verona 9. Juni 2024 - 12. Juni 2024 )Schwarberg J. , Karhu R. , Kallinger B. , Rommel M. , Schmidt R. , Schulze J. :Investigation of CMOS Single Process Steps on 4H-SiC a-Plane Wafers for Quantum Applications 47th ICT and Electronics Convention, MIPRO 2024 (Opatija 20. Mai 2024 - 24. Mai 2024 )In: Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Dragan Cisic, Pavle Ergovic, Tihana Galinac Grbac, Vera Gradisnik, Stjepan Gros, Andrej Jokic, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Marko Svaco, Edvard Tijan, Neven Vrcek, Boris Vrdoljak (Hrsg.): 2024 47th ICT and Electronics Convention, MIPRO 2024 - Proceedings 2024 10.1109/MIPRO60963.2024.10569589 Seidel L. , Liu T. , Concepcion O. , Spirito D. , Benkhelifa A. , Kiyek V. , Schulze J. , Marzban B. , Capellini G. , Witzens J. , Grützmacher D. , Buca D. , Oehme M. :Pulse tunable SiGeSn/GeSn multi-quantum-well microdisk lasers Metamaterials, Metadevices, and Metasystems 2024 (San Diego, CA, USA 18. August 2024 - 22. August 2024 )In: Nader Engheta, Mikhail A. Noginov, Nikolay I. Zheludev, Nikolay I. Zheludev (Hrsg.): Proceedings of SPIE - The International Society for Optical Engineering 2024 10.1117/12.3028016 Stolzke T. , Schwarz J. , März M. :Simplifying Random Particle Structures within Soft Magnetic Composite Materials for the Optimization of 3D-FEM Simulations IEEE Transactions on Magnetics 2024 ), S. 1-1 ISSN: 0018-9464 10.1109/TMAG.2024.3434611 Sun J. , Fritsch B. , Körner A. , Taherkhani M. , Park C. , Wang M. , Hutzler A. , Woehl TJ. :Discovery of Molecular Intermediates and Nonclassical Nanoparticle Formation Mechanisms by Liquid Phase Electron Microscopy and Reaction Throughput Analysis Small Structures 2024 )ISSN: 2688-4062 10.1002/sstr.202400146 Wanitzek M. , Hack M. , Schwarz D. , Schulze J. , Oehme M. :Low-temperature performance of GeSn-on-Si avalanche photodiodes toward single-photon detection Materials Science in Semiconductor Processing 176 2024 ), Art.Nr.: 108303 ISSN: 1369-8001 10.1016/j.mssp.2024.108303 Wanitzek M. , Schwarz D. , Schulze J. , Oehme M. :Bandwidth enhancement in GeSn-on-Si avalanche photodiodes with a 60 GHz gain-bandwidth-product 2024 IEEE Silicon Photonics Conference, SiPhotonics 2024 (Tokyo, JPN 15. April 2024 - 18. April 2024 )In: IEEE International Conference on Group IV Photonics GFP 2024 10.1109/SiPhotonics60897.2024.10543351 Wostatek T. :Nitride semiconductor crystal growth at FAU Erlangen-Nürnberg 12th Annual Meeting of the Young Crystal Growth (Erlangen 5. März 2024 - 5. März 2024 )Wostatek T. , Chirala VYMR. , Stoddard N. , Civas EN. , Pimputkar S. , Schimmel S. :Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential Materials 2024 )ISSN: 1996-1944 10.3390/ma17133104 2023 Baierhofer D. , Thomas B. , Staiger F. , Marchetti B. , Förster C. , Erlbacher T. :Correlation of Extended Defects with Electrical Yield of SiC MOSFET Devices Defect and Diffusion Forum 426 2023 ), S. 11-16 ISSN: 1012-0386 10.4028/p-i82158 Guiot E., Allibert F., Leib J., Becker T., Erlbacher T.:Improved Power Cycling Reliability through the use of SmartSiC ™ Engineered Substrate for Power Devices 2023 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2023 10.30420/566091210 Guiot E., Allibert F., Leib J., Becker T., Schwarzenbach W., Hellinger C., Erlbacher T., Rouchier S.:Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device Through the Use of SmartSiC™ Substrate Trans Tech Publications Ltd 2023 10.4028/p-777hqg Schlichting H., Lim M., Becker T., Kallinger B., Erlbacher T.:The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability Trans Tech Publications Ltd 2023 10.4028/p-4i3rhf Berkmann F. , Steuer O. , Ganss F. , Prucnal S. , Schwarz D. , Fischer IA. , Schulze J. :Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx Optical Materials Express 13 2023 ), S. 752-763 ISSN: 2159-3930 10.1364/OME.479637 Couasnon T. , Fritsch B. , Jank MP. , Blukis R. , Hutzler A. , Benning LG. :Goethite Mineral Dissolution to Probe the Chemistry of Radiolytic Water in Liquid-Phase Transmission Electron Microscopy Advanced Science 10 2023 ), Art.Nr.: 2301904 ISSN: 2198-3844 10.1002/advs.202301904 Fritsch B. , Körner A. , Couasnon T. , Blukis R. , Taherkhani M. , Benning LG. , Jank M. , Spiecker E. , Hutzler A. :Tailoring the Acidity of Liquid Media with Ionizing Radiation: Rethinking the Acid-Base Correlation beyond pH Journal of Physical Chemistry Letters 2023 ), S. 4644-4651 ISSN: 1948-7185 10.1021/acs.jpclett.3c00593 Geiling J. , Wagner L. , Auer F. , Ortner F. , Nuß A. , Seyfried R. , Stammberger F. , Steinberger M. , Bösmann A. , Öchsner R. , Wasserscheid P. , Graichen K. , März M. , Preuster P. :Operational experience with a liquid organic hydrogen carrier (LOHC) system for bidirectional storage of electrical energy over 725 h Journal of Energy Storage 72 2023 ), Art.Nr.: 108478 ISSN: 2352-152X 10.1016/j.est.2023.108478 Hutzler A. , Fritsch B. , Matthus CD. , Jank MP. , Rommel M. :Author Correction: Highly accurate determination of heterogeneously stacked Van-der-Waals materials by optical microspectroscopy (Scientific Reports, (2020), 10, 1, (13676), 10.1038/s41598-020-70580-3) Scientific Reports 13 2023 ), Art.Nr.: 1410 ISSN: 2045-2322 10.1038/s41598-023-28605-0 Kolesnik-Gray M. , Meingast L. , Siebert M. , Unbehaun T. , Huf T. , Ellrott G. , Abellan Saez G. , Wild S. , Lloret Segura VJ. , Mundloch U. , Schwarz J. , Niebauer M. , Szabo M. , Rommel M. , Hutzler A. , Hauke F. , Hirsch A. , Krstic V. :Unconventional conductivity increase in multilayer black phosphorus npj 2D Materials and Applications 7 2023 ), Art.Nr.: 21 ISSN: 2397-7132 10.1038/s41699-023-00384-2 Marhenke J. , Dirnecker T. , Vogel N. , Rommel M. :Stiffness influence on particle separation in polydimethylsiloxane-based deterministic lateral displacement devices Microfluidics and Nanofluidics 27 2023 ), Art.Nr.: 76 ISSN: 1613-4982 10.1007/s10404-023-02685-w Pham A. :Systemübergreifende modulare Charakterisierung von Dünnschichtsystemen mittels Reflexionsmessungen 2023 )Schimmel S. , Tomida D. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. :Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN—Transition from Dissolution Stage to Growth Stage Conditions Materials 16 2023 ), S. 2016 ISSN: 1996-1944 10.3390/ma16052016 Schlichting H. , Lim M. , Becker T. , Kallinger B. , Erlbacher T. :The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability Materials Science Forum 1090 2023 ), S. 127-133 ISSN: 0255-5476 10.4028/p-4i3rhf Schmidt R. :Einzelprozessentwicklung für die Herstellung von Halbleiterbauelementen auf 4H-SiC a-Plane Substraten 2023 )Schraml M. , Papathanasiou N. , May A. , Weiss T. , Erlbacher T. :Towards SiC-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters 10.4028/p-959z1t Schwarz J. , Niebauer M. , Kolesnik-Gray M. , Szabo M. , Baier L. , Chava P. , Erbe A. , Krstic V. , Rommel M. , Hutzler A. :Correlating Optical Microspectroscopy with 4×4 Transfer Matrix Modeling for Characterizing Birefringent Van der Waals Materials Small Methods 2023 )ISSN: 2366-9608 10.1002/smtd.202300618 Seidel L. , Liu T. , Marzban B. , Kiyek V. , Schulze J. , Capellini G. , Witzens J. , Buca D. , Oehme M. :SiGeSn/GeSn Multi Quantum Wells Light Emitting Diodes with a Negative Differential Resistance 2023 IEEE Silicon Photonics Conference, SiPhotonics 2023 (Washington, DC 4. April 2023 - 7. April 2023 )In: IEEE International Conference on Group IV Photonics GFP 2023 10.1109/SiPhotonics55903.2023.10141960 Singh M. , Abdelsamie M. , Li Q. , Kodalle T. , Lee DK. , Arnold S. , Ceratti DR. , Slack JL. , Schwartz CP. , Brabec C. , Tao S. , Sutter-Fella CM. :Effect of the Precursor Chemistry on the Crystallization of Triple Cation Mixed Halide Perovskites Chemistry of Materials 2023 )ISSN: 0897-4756 10.1021/acs.chemmater.3c00799 Sk MR. , Thunder S. , Lehninger D. , Sanctis S. , Raffel Y. , Lederer M. , Jank MPM. , Kaempfe T. , De S. , Chakrabarti B. :Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation ACS Applied Electronic Materials 5 2023 ), S. 812-820 ISSN: 2637-6113 10.1021/acsaelm.2c01357 Völkl A. , Toutouly J. , Drobek D. , Apeleo Zubiri B. , Spiecker E. , Klupp Taylor R. :Gram-Scale Continuous Flow Synthesis of Silver-on-Silica Patchy Nanoparticles with Widely Tunable Resonances for Plasmonics Applications ACS Applied Nano Materials 6 2023 ), S. 10126-10137 ISSN: 2574-0970 10.1021/acsanm.3c00869 Kim S., Byun D.W., Shin H.K., Koo S.M., Erlbacher T., Lim M., Csato C., Förthner J., Rusch O., Ehrensberger K., Kupfer B., Beuer S., Oertel S.:A Modeling of 4H-SiC Super-Junction MOSFETs with Filtered High Energy Implantation Trans Tech Publications Ltd 2023 10.4028/p-hyy2l9 Weißhaupt D. , Funk HS. , Oehme M. , Bloos D. , Berkmann F. , Seidel L. , Fischer IA. , Schulze J. :High mobility Ge 2DHG based MODFETs for low-temperature applications Semiconductor Science and Technology 38 2023 ), Art.Nr.: 035007 ISSN: 0268-1242 10.1088/1361-6641/acb22f 2022 Baierhofer D. , Thomas B. , Staiger F. , Marchetti B. , Foerster C. , Erlbacher T. :Defect reduction in SiC epilayers by different substrate cleaning methods Materials Science in Semiconductor Processing 140 2022 )ISSN: 1369-8001 10.1016/j.mssp.2021.106414 Erlbacher T., Rouchier S., Guiot E., Picun G., Allibert F., Leib J., Becker T., Schwarzenbach W., Drouin A., Béthoux J.M., Widiez J.:Proven Power Cycling Reliability of SmartSiC™ Substrate for Power Devices International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2022 10.30420/565822081 Berkmann F. , Augel L. , Hack M. , Kawaguchi Y. , Weisshaupt D. , Fischer IA. , Schulze J. :Optimization of Fully Integrated Al Nanohole Array-Based Refractive Index Sensors for Use With a LED Light Source IEEE Photonics Journal 14 2022 )ISSN: 1943-0655 10.1109/JPHOT.2022.3177354 Boettcher N. , Takamori T. , Wada K. , Saito W. , Nishizawa SI. , Erlbacher T. :Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 v 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe (Hannover 5. September 2022 - 9. September 2022 )In: 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe 2022 Daneri S. , Kerschbaum A. , Runa E. :One-dimensionality of the minimizers for a diffuse interface generalized antiferromagnetic model in general dimension Journal of Functional Analysis 283 2022 ), Art.Nr.: 109715 ISSN: 0022-1236 10.1016/j.jfa.2022.109715 Dreher V. , Joch D. , Kren H. , Schwarberg J. , Jank MP. :Ultrathin and flexible sensors for pressure and temperature monitoring inside battery cells 2022 IEEE Sensors Conference, SENSORS 2022 (Dallas, TX 30. Oktober 2022 - 2. November 2022 )In: Proceedings of IEEE Sensors 2022 10.1109/SENSORS52175.2022.9967234 Friedrich RP. , Kappes M. , Cicha I. , Tietze R. , Braun C. , Schneider-Stock R. , Nagy R. , Alexiou C. , Janko C. :Optical Microscopy Systems for the Detection of Unlabeled Nanoparticles International Journal of Nanomedicine Volume 17 2022 ), S. 2139-2163 ISSN: 1176-9114 10.2147/IJN.S355007 Fritsch B. , Wu M. , Hutzler A. , Zhou D. , Spruit R. , Vogl L. , Will J. , Pérez Garza H. , März M. , Jank M. , Spiecker E. :Sub-Kelvin thermometry for evaluating the local temperature stability within in situ TEM gas cells Ultramicroscopy 235 2022 ), S. 113494 ISSN: 0304-3991 10.1016/j.ultramic.2022.113494 https://doi.org/10.1088/1361-6528/ab8a8c Fritsch B. , Zech T. , Bruns M. , Körner A. , Khadivianazar S. , Wu M. , Zargar Talebi N. , Virtanen S. , Unruh T. , Jank M. , Spiecker E. , Hutzler A. :Radiolysis‐Driven Evolution of Gold Nanostructures – Model Verification by Scale Bridging In Situ Liquid‐Phase Transmission Electron Microscopy and X‐Ray Diffraction Advanced Science 9 2022 ), Art.Nr.: 2202803 ISSN: 2198-3844 10.1002/advs.202202803 https://onlinelibrary.wiley.com/doi/10.1002/advs.202202803 Jena S. :Optimierung von Lithographieprozessen auf Germaniumoberflächen zur Herstellung von Nanodrähten 2022 )Marhenke J. , Dirnecker T. , Vogel N. , Rommel M. :Increasing flow rates in polydimethylsiloxane-based deterministic lateral displacement devices for sub-micrometer particle separation Microfluidics and Nanofluidics 27 2022 ), Art.Nr.: 2 ISSN: 1613-4982 10.1007/s10404-022-02609-0 Marzban B. , Seidel L. , Kiyek V. , Liu T. , Zöllner M. , Ikonic Z. , Capellini G. , Buca D. , Schulze J. , Oehme M. , Witzens J. :Modeling and design of an electrically pumped SiGeSn microring laser Silicon Photonics XVII 2022 (Online 20. Februar 2022 - 24. Februar 2022 )In: Graham T. Reed, Andrew P. Knights (Hrsg.): Proceedings of SPIE - The International Society for Optical Engineering 2022 10.1117/12.2609537 Marzban B. , Seidel L. , Liu T. , Kiyek V. , Wu K. , Zollner MH. , Ikonik Z. , Schulze J. , Grutzmacher D. , Capellini G. , Oehme M. , Witzens J. , Buca D. :Electrically pumped SiGeSn microring lasers 2022 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2022 (Cabo San Lucas, MEX 11. Juli 2022 - 13. Juli 2022 )In: 2022 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2022 - Proceedings 2022 10.1109/SUM53465.2022.9858260 May A. , Rommel M. , Beuer S. , Erlbacher T. :Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC Materials Science Forum 1062 2022 ), S. 185-189 ISSN: 0255-5476 10.4028/p-36s1w4 Muthumbi AK. :Defect detection in nano-imprint stamps with deep learning and low resolution microscope 2022 )Schimmel S. , Salamon M. , Tomida D. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. :High Energy Computed Tomography as a Tool for Validation of Numerical Simulations of Ammonothermal Crystal Growth of GaN 8th International Workshop on Crystal Growth Technology (Berlin 29. Mai 2022 - 2. Juni 2022 )Schimmel S. , Salamon M. , Tomida D. , Kobelt I. , Heinlein L. , Kimmel AC. , Steigerwald T. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. , Schlücker E. , Wellmann P. :In Situ Monitoring Technologies as Prospective Validation Tools for Numerical Simulations of Ammonothermal Crystal Growth 7th European Conference on Crystal Growth (Paris 25. Juli 2022 - 27. Juli 2022 )Schimmel S. , Salamon M. , Tomida D. , Neumeier S. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. :High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors-A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN Materials 15 2022 ), S. 6165 ISSN: 1996-1944 10.3390/ma15176165 Schimmel S. , Sun W. , Dropka N. :Artificial Intelligence for Crystal Growth and Characterization Crystals 12 2022 ), S. 1232 ISSN: 2073-4352 10.3390/cryst12091232 Schimmel S. , Tomida D. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. :Temperature field and fluid flow in ammonothermal growth of GaN during etch-back and crystal growth for a retrograde solubility configuration International Workshop on Nitride Semiconductors (Berlin 9. Oktober 2022 - 14. Oktober 2022 )Sedova V. :Modeling of thick photoresist for grayscale lithography application 2022 )Seidel L. , Schafer S. , Oehme M. , Buca D. , Capellini G. , Schulze J. , Schwarz D. :Electroluminescence of SixGe1-x-ySny / Ge1-ySny pin-Diodes Grown on a GeSn Buffer 48th IEEE European Solid State Circuits Conference, ESSCIRC 2022 (Milan, ITA 19. September 2022 - 22. September 2022 )In: ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings 2022 10.1109/ESSCIRC55480.2022.9911458 Szabo M. :Optimierung und Charakterisierung von 2D-Materialien für die Passivierung von schwarzem Phosphor 2022 )Wanitzek M. , Oehme M. , Spieth C. , Schwarz D. , Seidel L. , Schulze J. :GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection 48th IEEE European Solid State Circuits Conference, ESSCIRC 2022 (Milan, ITA 19. September 2022 - 22. September 2022 )In: ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings 2022 10.1109/ESSCIRC55480.2022.9911363 2021 Awad A. , Brendel P. , Evanschitzky P. , Woldeamanual DS. , Rosskopf A. , Erdmann A. :Accurate prediction of EUV lithographic images and 3D mask effects using generative networks Journal of Micro-Nanolithography MEMS and MOEMS 20 2021 )ISSN: 1932-5150 10.1117/1.JMM.20.4.043201 Fritsch B. , Hutzler A. , Wu M. , Khadivianazar S. , Vogl L. , Jank MPM. , März M. , Spiecker E. :Accessing local electron-beam induced temperature changes during in situ liquid-phase transmission electron microscopy Nanoscale Advances 3 2021 ), S. 2466 - 2474 ISSN: 2516-0230 10.1039/D0NA01027H https://pubs.rsc.org/en/content/articlelanding/2021/NA/D0NA01027H Fritsch B. , Hutzler A. , Wu M. , Vogl L. , Jank MP. , März M. , Spiecker E. :Beam-induced heating at low electron fluxes during liquid phase transmission electron microscopy Microscopy and Microanalysis 27 2021 ), S. 1040-1042 ISSN: 1431-9276 10.1017/S1431927621003937 Fritsch B. , Hutzler A. , Wu M. , Vogl L. , Jank MPM. , März M. , Spiecker E. :Evaluating local temperature changes during liquid cell transmission electron microscopy by in situ parallel beam electron diffraction Virtual Early Career European Microscopy Congress 2020 (Kopenhagen 24. November 2020 - 26. November 2020 )In: Proceedings of the European Microscopy Congress 2020 2021 10.22443/rms.emc2020.253 https://www.emc2020.eu/abstract/evaluating-local-temperature-changes-during-liquid-cell-transmission-electron-microscopy-by-emin-situnbspemparallel-beam-electron-diffraction.html Geiling J. , Steinberger M. , Ortner F. , Seyfried R. , Nuss A. , Uhrig F. , Lange C. , Oschsner R. , Wasserscheid P. , März M. , Preuster P. :Combined dynamic operation of PEM fuel cell and continuous dehydrogenation of perhydro-dibenzyltoluene International Journal of Hydrogen Energy 46 2021 ), S. 35662-35677 ISSN: 0360-3199 10.1016/j.ijhydene.2021.08.034 Gerwig M. , Ali AS. , Neubert D. , Polster S. , Bohme U. , Franze G. , Rosenkranz M. , Popov A. , Ponomarev I. , Jank M. , Viehweger C. , Brendler E. , Frey L. , Kroll P. , Kroke E. :From Cyclopentasilane to Thin-Film Transistors Advanced Electronic Materials 7 2021 ), S. 1-13 ISSN: 2199-160X 10.1002/aelm.202000422 Hirsch A. , Schulze M. , Sturm F. , Trempa M. , Reimann C. , Friedrich J. :Factors influencing the gas bubble evolution and the cristobalite formation in quartz glass Cz crucibles for Czochralski growth of silicon crystals Journal of Crystal Growth 570 2021 )ISSN: 0022-0248 10.1016/j.jcrysgro.2021.126231 Hutzler A. , Fritsch B. , Branscheid R. , Wu M. , Jank M. , Spiecker E. :Direct Manipulation of Nanostructures Utilizing Donut-Shaped Potential Wells during Liquid-Phase Transmission Electron Microscopy Virtual Early Career European Microscopy Congress 2020 10.22443/rms.emc2020.158 Johnsson A. , Schmidt G. , Hauf M. , Pichler P. :A Review of Platinum Diffusion in Silicon and Its Application for Lifetime Engineering in Power Devices physica status solidi (a) 2021 )ISSN: 1862-6300 10.1002/pssa.202100462 Lehninger D. , Ellinger M. , Ali T. , Li S. , Mertens K. , Lederer M. , Olivio R. , Kämpfe T. , Hanisch N. , Biedermann K. , Rudolph M. , Brackmann V. , Sanctis S. , Jank MP. , Seidel K. :A Fully Integrated Ferroelectric Thin-Film-Transistor – Influence of Device Scaling on Threshold Voltage Compensation in Displays Advanced Electronic Materials 2021 )ISSN: 2199-160X 10.1002/aelm.202100082 Meißner E. , Besendörfer S. , Faraji S. , Bahat-Treidel E. , Würfl J. :The long journey from crystal growth to power devices, the role of materials development for III-Nitride semiconductors 2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021 (Virtual, Online 3. Mai 2021 - 7. Mai 2021 )In: PCIM Europe Conference Proceedings 2021 Meißner E. , Jockel D. , Koch M. , Niewa R. :A New Perspective on Growth of GaN from the Basic Ammonothermal Regime In: Elke Meissner, Rainer Niewa (Hrsg.): Ammonothermal Synthesis and Crystal Growth of Nitrides Cham Springer Science and Business Media Deutschland GmbH 2021 , S. 77-103 (Springer Series in Materials Science, Bd.304)ISBN: 978-3-030-56305-9 10.1007/978-3-030-56305-9_6 Nagy R. , Dasari DBR. , Babin C. , Liu D. , Vorobyov V. , Niethammer M. , Widmann M. , Linkewitz T. , Gediz I. , Stoehr R. , Weber HB. , Ohshima T. , Ghezellou M. , Son NT. , Ul-Hassan J. , Kaiser F. , Wrachtrup J. :Narrow inhomogeneous distribution of spin-active emitters in silicon carbide Applied Physics Letters 118 2021 ), S. 144003 ISSN: 0003-6951 10.1063/5.0046563 Rafaja D. , Fischer P. , Barchuk M. , Motylenko M. , Roeder C. , Besendoerfer S. , Meißner E. :X-Ray diffraction analysis and modeling of the depth profile of lattice strains in AlGaN stacks Thin Solid Films 732 2021 ), Art.Nr.: 138777 ISSN: 0040-6090 10.1016/j.tsf.2021.138777 Rühl M. , Lehmeyer J. , Nagy R. , Weißer M. , Bockstedte M. , Krieger M. , Weber HB. :Removing the orientational degeneracy of the TS defect in 4H-SiC by electric fields and strain New Journal of Physics 23 2021 ), Art.Nr.: 073002 ISSN: 1367-2630 10.1088/1367-2630/abfb3e https://iopscience.iop.org/article/10.1088/1367-2630/abfb3e Schimmel S. , Tomida D. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. :Numerical simulation of ammonothermal crystal growth of GaN-current state, challenges, and prospects Crystals 11 2021 ), Art.Nr.: 356 ISSN: 2073-4352 10.3390/cryst11040356 Schimmel S. , Tomida D. , Saito M. , Bao Q. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. :Boundary conditions for simulations of fluid flow and temperature field during ammonothermal crystal growth—a machine-learning assisted study of autoclave wall temperature distribution Crystals 11 2021 ), S. 1-27 ISSN: 2073-4352 10.3390/cryst11030254 Schimmel S. , Tomida D. , Saito M. , Bao Q. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. , Wellmann P. :Numerical Simulations of Ammonothermal Crystal Growth of GaN and Pathways towards their Experimental Validation Seminar of the Young Crystal Growers (DGKK) (Berlin 5. Oktober 2022 - 6. Oktober 2021 )Schlichting H. :Impact of Extended Defects on the Yield and Performance of 4H-SiC Power Devices 5th Sino MOS-AK Workshop (Xi'an 11. August 2021 - 13. August 2021 )10.5281/zenodo.5642677 Schmidt K. , Polzinger B. , Metry M. , Koppe S. , Zimmermann A. :Hybrid Additive Manufacturing by Embedded Electrical Circuits Using 3-D Dispensing IEEE Transactions on Components, Packaging and Manufacturing Technology 11 2021 ), S. 510-521 ISSN: 2156-3950 10.1109/TCPMT.2021.3054835 Schnick W. , Cordes N. , Mallmann M. , Niewa R. , Meißner E. :Ammonothermal Materials In: Elke Meissner, Rainer Niewa (Hrsg.): Ammonothermal Synthesis and Crystal Growth of Nitrides Cham Springer Science and Business Media Deutschland GmbH 2021 , S. 329-336 (Springer Series in Materials Science, Bd.304) 10.1007/978-3-030-56305-9_18 Taherkhani M. , Fritsch B. , Jank MPM. , Spiecker E. , Hutzler A. :Modelling the Radiolysis of Silver Nitrate Solutions in presence of Bromide Ions in Liquid-Phase Transmission Electron Microscopy Microscopy and Microanalysis 27 2021 ), S. 103-104 ISSN: 1431-9276 10.1017/S1431927621013519 Toumi S. , Ouennoughi Z. , Weiß R. :Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode Applied Physics A: Materials Science and Processing 127 2021 ), Art.Nr.: 661 ISSN: 0947-8396 10.1007/s00339-021-04787-0 Yu Z. , Xu T. , Letz S. , Bayer CF. , Schletz A. , März M. :Automated quantitative analysis of void morphology evolution in Ag[sbnd]Ag direct bonding interface after accelerated aging Microelectronics Reliability 126 2021 ), Art.Nr.: 114285 ISSN: 0026-2714 10.1016/j.microrel.2021.114285 Yu Z. , Yu Z. , Tan YZ. , Bayer CF. , Rauh H. , Schletz A. , März M. , Birlem O. :Cu-Cu Thermocompression Bonding with Cu-Nanowire Films for Power Semiconductor Die-Attach on DBC Substrates 23rd IEEE Electronics Packaging Technology Conference, EPTC 2021 (Virtual, Online, SGP 1. Dezember 2021 - 30. Dezember 2021 )In: 2021 IEEE 23rd Electronics Packaging Technology Conference, EPTC 2021 2021 10.1109/EPTC53413.2021.9663890 2020 Albrecht M. , Klüpfel F. , Erlbacher T. :An Iterative Surface Potential Algorithm Including Interface Traps for Compact Modeling of SiC-MOSFETs IEEE Transactions on Electron Devices 67 2020 ), S. 855-862 ISSN: 0018-9383 10.1109/TED.2020.2967507 Albrecht M. , Pérez D. , Martens R. , Bauer AJ. , Erlbacher T. :Impact of channel implantation on a 4h-sic cmos operational amplifier for high temperature applications 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 (Kyoto 29. September 2019 - 4. Oktober 2019 )In: Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Hrsg.): Materials Science Forum 2020 10.4028/www.scientific.net/MSF.1004.1123 Bejenari I. , Burenkov A. , Pichler P. , Deretzis I. , La Magna A. :Molecular dynamics modeling of the radial heat transfer from silicon nanowires 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 (, 3. September 2020 - 6. Oktober 2020 )In: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 10.23919/SISPAD49475.2020.9241646 Besendörfer S. , Meißner E. , Medjdoub F. , Derluyn J. , Friedrich J. , Erlbacher T. :The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors Scientific Reports 10 2020 ), Art.Nr.: 17252 ISSN: 2045-2322 10.1038/s41598-020-73977-2 Besendörfer S. , Meißner E. , Tajalli A. , Meneghini M. , Freitas JA. , Derluyn J. , Medjdoub F. , Meneghesso G. , Friedrich J. , Erlbacher T. :Vertical breakdown of GaN on Si due to V-pits Journal of Applied Physics 127 2020 ), Art.Nr.: 015701 ISSN: 0021-8979 10.1063/1.5129248 Besendörfer S. , Meißner E. , Zweipfennig T. , Yacoub H. , Fahle D. , Behmenburg H. , Kalisch H. , Vescan A. , Friedrich J. , Erlbacher T. :Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures AIP Advances 10 2020 ), Art.Nr.: 045028 ISSN: 2158-3226 10.1063/1.5141905 Boettcher N. , Erlbacher T. :Design Considerations on a Monolithically Integrated, Self Controlled and Regenerative 900 V SiC Circuit Breaker 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 (Suita 23. September 2020 - 25. September 2020 )In: 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 2020 10.1109/WiPDAAsia49671.2020.9360279 Di Benedetto L. , Licciardo GD. , Erlbacher T. , Bauer AJ. , Rubino A. :A 4H-SiC UV Phototransistor with Excellent Optical Gain Based on Controlled Potential Barrier IEEE Transactions on Electron Devices 67 2020 ), S. 154-159 ISSN: 0018-9383 10.1109/TED.2019.2950986 Faraji S. , Meißner E. , Weingärtner R. , Besendörfer S. , Friedrich J. :In-situ preparation of gan sacrificial layers on sapphire substrate in movpe reactor for self-separation of the overgrown gan crystal Crystals 10 2020 ), S. 1-11 ISSN: 2073-4352 10.3390/cryst10121100 Hellinger C. , Rusch O. , Rommel M. , Bauer AJ. , Erlbacher T. :Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC In: Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Hrsg.): Materials Science Forum 2020 10.4028/www.scientific.net/MSF.1004.718 Hessler S. , Knopf S. , Rommel M. , Girschikofsky M. , Schmauß B. , Hellmann R. :Advancing the sensitivity of integrated epoxy-based Bragg grating refractometry by high-index nanolayers Optics Letters 45 2020 ), S. 5510-5513 ISSN: 0146-9592 10.1364/OL.402768 Hutzler A. , Fritsch B. , Matthus C. , Jank MPM. , Rommel M. :Highly Accurate Determination of Heterogeneously Stacked Van-der-Waals Materials by Optical Microspectroscopy Scientific Reports 10 2020 ), Art.Nr.: 13676 ISSN: 2045-2322 10.1038/s41598-020-70580-3 https://www.nature.com/articles/s41598-020-70580-3 Kazantsev D. , Ryssel H. :ASNOM mapping of SiC epilayer doping profile and of surface phonon polariton waveguiding Journal of Applied Physics 127 2020 )ISSN: 0021-8979 10.1063/1.5128104 Kocher M. , Schlichting H. , Kallinger B. , Rommel M. , Bauer AJ. , Erlbacher T. :Influence of shallow pits and device design of 4H-SiC VDMOS transistors on in-line defect analysis by photoluminescence and differential interference contrast mapping 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 (Kyoto 29. September 2019 - 4. Oktober 2019 )In: Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Hrsg.): Materials Science Forum 2020 10.4028/www.scientific.net/MSF.1004.299 Morioka N. , Babin C. , Nagy R. , Gediz I. , Hesselmeier E. , Liu D. , Joliffe M. , Niethammer M. , Dasari D. , Vorobyov V. , Kolesov R. , Stoehr R. , Ul-Hassan J. , Nguyen Tien Son . , Ohshima T. , Udvarhelyi P. , Thiering G. , Gali A. , Wrachtrup J. , Kaiser F. :Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide Nature Communications 11 2020 ), Art.Nr.: 2516 ISSN: 2041-1723 10.1038/s41467-020-16330-5 Rickert L. , Fritsch B. , Kors A. , Reithmaier JP. , Benyoucef M. :Mode properties of telecom wavelength InP-based high-(Q/V) L4/3 photonic crystal cavities Nanotechnology 31 2020 ), Art.Nr.: 315703 ISSN: 1361-6528 10.1088/1361-6528/ab8a8c https://iopscience.iop.org/article/10.1088/1361-6528/ab8a8c Rusch O. , Hellinger C. , Moult J. , Corcoran Y. , Erlbacher T. :Reducing on-resistance for SiC diodes by thin wafer and laser anneal technology 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 (Kyoto 29. September 2019 - 4. Oktober 2019 )In: Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Hrsg.): Materials Science Forum 2020 10.4028/www.scientific.net/MSF.1004.155 Toumi S. , Ouennoughi Z. , Murakami K. :Effect of temperature on the Fowler-Nordheim barrier height, flat band potentials and electron/hole effective masses in the MOS capacitors Physica B-Condensed Matter 585 2020 ), Art.Nr.: 412125 ISSN: 0921-4526 10.1016/j.physb.2020.412125 Wankerl H. , Stern M. , Altieri-Weimar P. , Al-Baddai S. , Lang KJ. , Roider F. , Lang EW. :Fully convolutional networks for void segmentation in X-ray images of solder joints Journal of Manufacturing Processes 57 2020 ), S. 762-767 ISSN: 1526-6125 10.1016/j.jmapro.2020.07.021 Weiße J. , Matthus C. , Schlichting H. , Mitlehner H. , Erlbacher T. :RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC IEEE Transactions on Electron Devices 67 2020 ), S. 3278-3284 ISSN: 0018-9383 10.1109/TED.2020.3002730 Wicht T. , Mueller S. , Weingaertner R. , Epelbaum B. , Besendoerfer S. , Blaess U. , Weißer M. , Unruh T. , Meißner E. :X-ray characterization of physical-vapor-transport-grown bulk AlN single crystals Journal of Applied Crystallography 53 2020 ), S. 1080-1086 ISSN: 0021-8898 10.1107/S1600576720008961 Yu Z. , Zeng W. , Zhao D. , Zhang Z. , Bayer CF. , Schletz A. , März M. :Reliability of silver direct bonding in thermal cycling tests 8th IEEE Electronics System-Integration Technology Conference, ESTC 2020 (Tonsberg, Vestfold 15. September 2020 - 18. September 2020 )In: Proceedings - 2020 IEEE 8th Electronics System-Integration Technology Conference, ESTC 2020 2020 10.1109/ESTC48849.2020.9229753 Zhao D. , Letz S. , Schletz A. , März M. :A Method for the Characterization of Adhesion Strength Degradation of Thin Films on Si-Substrate under thermal cycling test 2020 CIPS (Berlin 24. März 2020 - 26. März 2020 )Zhao D. , Letz S. , Yu Z. , Schletz A. , März M. :Combined experimental and numerical approach for investigating the mechanical degradation of the interface between thin film metallization and Si-substrate after temperature cycling test Microelectronics Reliability 2020 )ISSN: 0026-2714 10.1016/j.microrel.2020.113785 Zhao Y. , Miao P. , Elia J. , Hu H. , Wang X. , Heumüller T. , Hou Y. , Matt G. , Osvet A. , Chen YT. , Tarragó M. , de Ligny D. , Przybilla T. , Denninger P. , Will J. , Zhang J. , Tang X. , Li N. , He C. , Pan A. , Meixner AJ. , Spiecker E. , Zhang D. , Brabec C. :Strain-activated light-induced halide segregation in mixed-halide perovskite solids Nature Communications 11 2020 ), Art.Nr.: 6328 ISSN: 2041-1723 10.1038/s41467-020-20066-7 Zimmermann V. , Zörner A. , Chen W. , Yu Z. , Jank M. , Bayer C. , Schletz A. , März M. :Integration of printed electronics with potted power electronic modules 11th International Conference on Integrated Power Electronics Systems, CIPS 2020 (Berlin 24. März 2020 - 26. März 2020 )In: CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems 2020 2019 Albrecht M. , Erlbacher T. , Bauer A. , Frey L. :Improving 5V digital 4H-SIC CMOS ics for operating at 400°C using PMOS channel implantation Materials Science Forum 2019 ), S. 827-831 ISSN: 0255-5476 10.4028/www.scientific.net/MSF.963.827 Beljakowa S. , Pichler P. , Kalkofen B. , Hübner R. :Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon physica status solidi (a) 216 2019 ), Art.Nr.: 1900306 ISSN: 1862-6300 10.1002/pssa.201900306 Boettcher N. , Heckel T. , Erlbacher T. , Pelaic K. :Silicon RC-Snubber for 900 V Applications Utilising non-Stoichiometric Silicon Nitride 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (Shanghai 19. Mai 2019 - 23. Mai 2019 )In: 31st International Symposium on Power Semiconductor Devices & ICs , NEW YORK 2019 10.1109/ISPSD.2019.8757589 Chen YC. , Salter PS. , Niethammer M. , Widmann M. , Kaiser F. , Nagy R. , Morioka N. , Babin C. , Erlekampf J. , Berwian P. , Booth MJ. , Wrachtrup J. :Laser Writing of Scalable Single Color Centers in Silicon Carbide Nano Letters 19 2019 ), S. 2377-2383 ISSN: 1530-6984 10.1021/acs.nanolett.8b05070 Di Benedetto L. , Matthus C. , Erlbacher T. , Bauer AJ. , Licciardo GD. , Rubino A. , Frey L. :Performance of 4H-SIC bipolar diodes as temperature sensor at low temperatures 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham 2. September 2018 - 6. September 2018 )In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019 10.4028/www.scientific.net/MSF.963.572 Erdmann A. , Evanschitzky P. , Mesilhy HMS. , Philipsen V. , Hendrickx E. , Bauer M. :Attenuated phase shift mask for extreme ultraviolet: Can they mitigate three-dimensional mask effects? Journal of Micro-Nanolithography MEMS and MOEMS 18 2019 ), Art.Nr.: 011005 ISSN: 1932-5150 10.1117/1.JMM.18.1.011005 Erlekampf J. , Kallinger B. , Weiße J. , Rommel M. , Berwian P. , Friedrich J. , Erlbacher T. :Deeper insight into lifetime-engineering in 4H-SiC by ion implantation Journal of Applied Physics 126 2019 ), Art.Nr.: 045701 ISSN: 0021-8979 10.1063/1.5092429 Fedorova N. , Macher P. , Jovicic V. , Zbogar-Rasic A. , Delgado A. :Experimental investigation of the gravity influence on the condensation behaviour on Al and PTFE-samples 27. GALA-Fachtagung "Experimentelle Strömungsmechanik" (Erlangen 3. September 2019 - 5. September 2019 )In: A. Delgado, B. Gatternig, M. Münsch, B. Ruck, A. Leder (Hrsg.): Proceedings der 27. GALA-Fachtagung "Experimentelle Strömungsmechanik" 2019 Grünler S. , Rattmann G. , Erlbacher T. , Bauer AJ. , Krach F. , Frey L. :Towards highly integrated, automotive power SoCs using capacitors operating at 100 V implemented in TSV 9th International Conference on Integrated Power Electronics Systems, CIPS 2016 (Nuremberg, DEU 8. März 2016 - 10. März 2016 )In: CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems 2019 Hutzler A. , Fritsch B. , Jank M. , Branscheid R. , Martens C. , Spiecker E. , März M. :Nanoparticles: In Situ Liquid Cell TEM Studies on Etching and Growth Mechanisms of Gold Nanoparticles at a Solid–Liquid–Gas Interface Advanced Materials Interfaces 6 2019 ), S. 1970126 ISSN: 2196-7350 10.1002/admi.201970126 Hutzler A. , Fritsch B. , Jank M. , Branscheid R. , Martens R. , Spiecker E. , März M. :In Situ Liquid Cell TEM Studies on Etching and Growth Mechanisms of Gold Nanoparticles at a Solid-Liquid-Gas Interface Advanced Materials Interfaces 6 2019 ), Art.Nr.: 1901027 ISSN: 2196-7350 10.1002/admi.201901027 https://www.onlinelibrary.wiley.com/doi/10.1002/admi.201901027 Hutzler A. , Fritsch B. , Jank MPM. , Branscheid R. , Spiecker E. , März M. :Preparation of Graphene-Supported Microwell Liquid Cells for In Situ Transmission Electron Microscopy Journal of Visualized Experiments 2019 ), Art.Nr.: e59751 ISSN: 1940-087X 10.3791/59751 https://www.jove.com/video/59751/preparation-graphene-supported-microwell-liquid-cells-for-situ?status=a61757k Hutzler A. , Matthus C. , Dolle C. , Rommel M. , Jank MPM. , Spiecker E. , Frey L. :Large-Area Layer Counting of Two-Dimensional Materials Evaluating the Wavelength Shift in Visible-Reflectance Spectroscopy Journal of Physical Chemistry C 123 2019 ), S. 9192 - 9201 ISSN: 1932-7447 10.1021/acs.jpcc.9b00957 https://pubs.acs.org/doi/10.1021/acs.jpcc.9b00957 Kocher M. , Yao B. , Weiße J. , Rommel M. , Xu ZW. , Erlbacher T. , Bauer A. :Determination of compensation ratios of al-implanted 4H-SIC by tcad modelling of TLM measurements 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham 2. September 2018 - 6. September 2018 )In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019 10.4028/www.scientific.net/MSF.963.445 Matlok S. , Boettcher N. , Jahn M. , Hörauf P. , Erlbacher T. , Eckardt B. :Retrofitting Wide Band Gap Devices to classic Power Modules using Silicon RC Snubbers 2019 PCIM Europe (Nürnberg 7. Mai 2019 - 9. Mai 2019 )https://www.researchgate.net/publication/331642497_Retrofitting_Wide_Band_Gap_Devices_to_classic_Power_Modules_using_Silicon_RC_Snubbers Matthus CD. , Bauer AJ. , Frey L. , Erlbacher T. :Wavelength-selective 4H-SiC UV-sensor array Materials Science in Semiconductor Processing 90 2019 ), S. 205-211 ISSN: 1369-8001 10.1016/j.mssp.2018.10.019 Matthus CD. , Di Benedetto L. , Kocher M. , Bauer AJ. , Licciardo GD. , Rubino A. , Erlbacher T. :Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K IEEE Sensors Journal 19 2019 ), S. 2871-2878 ISSN: 1530-437X 10.1109/JSEN.2019.2891293 Pichler P. , Sledziewski T. , Häublein V. , Bauer AJ. , Erlbacher T. :Channeling in 4H-SiC from an application point of view 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham 2. September 2018 - 6. September 2018 )In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019 10.4028/www.scientific.net/MSF.963.386 Rattmann G. , Pichler P. , Erlbacher T. :On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics physica status solidi (a) 216 2019 ), Art.Nr.: 1900167 ISSN: 1862-6300 10.1002/pssa.201900167 Rusch O. , Moult J. , Erlbacher T. :Influence of trench design on the electrical properties of 650v 4H-SIC JBS diodes 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham 2. September 2018 - 6. September 2018 )In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019 10.4028/www.scientific.net/MSF.963.549 Schlichting H. , Sledziewski T. , Bauer A. , Erlbacher T. :Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors Materials Science Forum 963 2019 ), S. 763-767 ISSN: 0255-5476 10.4028/www.scientific.net/MSF.963.763 Schlichting H. , Sledziewski T. , Bauer AJ. , Erlbacher T. :Design considerations for robust manufacturing and high yield of 1.2 kv 4H-SIC VDMOS transistors 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham 2. September 2018 - 6. September 2018 )In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019 10.4028/www.scientific.net/MSF.963.763 Schriefer T. , Hofmann M. :A hybrid frequency-time-domain approach to determine the vibration fatigue life of electronic devices Microelectronics Reliability 98 2019 ), S. 86-94 ISSN: 0026-2714 10.1016/j.microrel.2019.04.001 Schriefer T. , Hofmann M. , Rauh H. , Eckardt B. , März M. :Parameter study on the electrical contact resistance of axially canted coil springs for high-current systems 2018 29th International Conference on Electrical Contacts together with 64th IEEE Holm Conference on Electrical Contacts (Albuquerque, NM 14. Oktober 2018 - 18. Oktober 2018 )10.1109/HOLM.2018.8611640 Stolzke T. , Dirnecker T. , Schwarz J. , Frey L. :Investigation of magnetic properties from a manganese-zinc-ferrite polymer bonded material International Journal of Applied Electromagnetics and Mechanics 59 2019 ), S. 97-104 ISSN: 1383-5416 10.3233/JAE-171244 Stolzke T. , Ehrlich S. , Joffe C. , März M. :Comprehensive accuracy examination of electrical power loss measurements of inductive components for frequencies up to 1 MHz Journal of Magnetism and Magnetic Materials 497 2019 ), Art.Nr.: 166022 ISSN: 0304-8853 10.1016/j.jmmm.2019.166022 Udvarhelyi P. , Nagy R. , Kaiser F. , Lee SY. , Wrachtrup J. , Gali A. :Spectrally Stable Defect Qubits with no Inversion Symmetry for Robust Spin-To-Photon Interface Physical Review Applied 11 2019 ), Art.Nr.: 044022 ISSN: 2331-7019 10.1103/PhysRevApplied.11.044022 Weiße J. , Hauck M. , Krieger M. , Bauer A. , Erlbacher T. :Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC AIP Advances 9 2019 ), S. 055308 ISSN: 2158-3226 10.1063/1.5096440 Weiße J. , Hauck M. , Krieger M. , Bauer AJ. , Erlbacher T. :Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063/1.5096440) AIP Advances 9 2019 ), Art.Nr.: 079901 ISSN: 2158-3226 10.1063/1.5118666 Weiße J. , Hauck M. , Sledziewski T. , Krieger M. , Bauer A. , Mitlehner H. , Frey L. , Erlbacher T. :On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham 2. September 2018 - 6. September 2018 )In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019 10.4028/www.scientific.net/MSF.963.433 Weiße J. , Mitlehner H. , Frey L. , Erlbacher T. :Design of a 4H-SIC resurf N-LDMOS transistor for high voltage integrated circuits 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham 2. September 2018 - 6. September 2018 )In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019 10.4028/www.scientific.net/MSF.963.629 Śledziewski T. , Erlbacher T. , Bauer A. , Frey L. , Chen X. , Zhao Y. , Li C. , Dai X. :Comparison between NI-SALICIDE and self-aligned lift-off used in fabrication of ohmic contacts for sic power MOSFET 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham 2. September 2018 - 6. September 2018 )In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019 10.4028/www.scientific.net/MSF.963.490 2018 Bilbao-Guillerna A. , Thiruvallur Eachambadi R. , Cadot GBJ. , Axinte DA. , Billingham J. , Stumpf F. , Stumpf F. , Beuer S. , Rommel M. :Novel Approach Based on Continuous Trench Modelling to Predict Focused Ion Beam Prepared Freeform Surfaces Journal of Materials Processing Technology 2018 )ISSN: 0924-0136 10.1016/j.jmatprotec.2017.10.024 Distler F. , Oppelt D. , Schür J. , Vossiek M. :Design and characterization of a compact and robust shielded dielectric waveguide for mmW applications In: Proceedings of the GeMiC 2018 - The 11th German Microwave Conference (GeMiC 2018) 2018 10.23919/gemic.2018.8335108 Erlbacher T. , Huerner A. , Zhu Y. , Bach L. , Schletz A. , Zuerbig V. , Pinti L. , Kirste L. , Giese C. , Nebel CE. , Bauer AJ. , Frey L. :Electrical properties of schottky-diodes based on B doped diamond International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 10.4028/www.scientific.net/MSF.924.931 Erlekampf J. , Kaminzky D. , Rosshirt K. , Kallinger B. , Rommel M. , Berwian P. , Friedrich J. , Frey L. :Influence and mutual interaction of process parameters on the Z1/2defect concentration during epitaxy of 4H-SiC International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 10.4028/www.scientific.net/MSF.924.112 Förthner M. , Girschikofsky M. , Rumler M. , Stumpf F. , Rommel M. , Hellmann R. , Frey L. :One-step nanoimprinted Bragg grating sensor based on hybrid polymers Sensors and Actuators A-Physical 283 2018 ), S. 298-304 ISSN: 0924-4247 10.1016/j.sna.2018.09.053 Girschikofsky MG. , Rosenberger M. , Förthner M. , Rommel M. , Frey L. , Hellmann R. :Flexible thin film bending sensor based on Bragg gratings in hybrid polymers Optical Sensing and Detection V 2018 10.1117/12.2303820 Huerner A. , Heckel T. , Endruschat A. , Erlbacher T. , Bauer AJ. , Frey L. :Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 10.4028/www.scientific.net/MSF.924.901 Hutzler A. :Development of advanced liquid cell architectures for high performance in situ transmission electron microscopy in materials sciences 2018 )https://opus4.kobv.de/opus4-fau/frontdoor/index/index/docId/10092 Hutzler A. , Matthus C. , Rommel M. , Jank M. , Frey L. :Large-Area Layer Counting of 2D Materials via Visible Reflection Spectroscopy 19th International Microscopy Congress (IMC19) (Sydney 9. September 2018 - 14. September 2018 )https://abstracts.imc19.com/pdf/abstract_497.pdf Hutzler A. , Schmutzler T. , Jank MPM. , Branscheid R. , Unruh T. , Spiecker E. , Frey L. :Unravelling the Mechanisms of Gold−Silver Core−Shell Nanostructure Formation by in Situ TEM Using an Advanced Liquid Cell Design Nano Letters 18 2018 ), S. 7222 - 7229 ISSN: 1530-6984 10.1021/acs.nanolett.8b03388 https://pubs.acs.org/doi/10.1021/acs.nanolett.8b03388 Kalkofen B. , Ahmed B. , Beljakowa S. , Lisker M. , Kim YS. , Burte EP. :Atomic layer deposition of phosphorus oxide films as solid sources for doping of semiconductor structures 18th IEEE International Conference on Nanotechnology (IEEE-NANO) (Cork 23. Juli 2018 - 26. Juli 2018 )In: 2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) , NEW YORK 2018 10.1109/nano.2018.8626235 Lomakin K. , Pavlenko T. , Ankenbrand M. , Sippel M. , Ringel J. , Scheetz M. , Klemm T. , Gräf D. , Helmreich K. , Franke J. , Gold G. :Evaluation and Characterization of 3D Printed Pyramid Horn Antennas utilizing different Deposition Techniques for Conductive Material IEEE Transactions on Components, Packaging and Manufacturing Technology 2018 ), S. 1-1 ISSN: 2156-3950 10.1109/tcpmt.2018.2871931 Matthus C. , Hürner A. , Erlbacher T. , Bauer AJ. , Frey L. :Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes Solid-State Electronics 2018 ), S. 101-105 ISSN: 0038-1101 10.1016/j.sse.2018.03.010 Nagy R. , Widmann M. , Niethammer M. , Dasari DBR. , Gerhardt I. , Soykal OO. , Radulaski M. , Ohshima T. , Vuckovic J. , Nguyen Tien Son . , Ivanov IG. , Economou SE. , Bonato C. , Lee SY. , Wrachtrup J. :Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide Physical Review Applied 9 2018 ), Art.Nr.: 034022 ISSN: 2331-7019 10.1103/PhysRevApplied.9.034022 Nouibat TH. , Messai Z. , Chikouch D. , Ouennoughi Z. , Rouag N. , Rommel M. , Frey L. :Normalized differential conductance to study current conduction mechanisms in MOS structures Microelectronics Reliability 91 2018 ), S. 183-187 ISSN: 0026-2714 10.1016/j.microrel.2018.10.001 Rosenberger M. , Girschikofsky M. , Förthner M. , Belle S. , Rommel M. , Frey L. , Schmauß B. , Hellmann R. :TiO2 surface functionalization of COC based planar waveguide Bragg gratings for refractive index sensing Journal of Optics 20 2018 ), Art.Nr.: 01LT02 ISSN: 2040-8978 10.1088/2040-8986/aa9bcf Scharin-Mehlmann M. , Häring A. , Rommel M. , Dirnecker T. , Friedrich O. , Frey L. , Gilbert D. :Nano- and micro-patterned S-, H-, and X-PDMS for cell-based applications: Comparison of wettability, roughness, and cell-derived parameters Frontiers in Bioengineering and Biotechnology 6 2018 ), Art.Nr.: 51 ISSN: 2296-4185 10.3389/fbioe.2018.00051 Schneidereit D. , Tschernich J. , Friedrich O. , Scharin-Mehlmann M. , Gilbert D. :3D-Printed Reusable Cell Culture Chamber with Integrated Electrodes for Electrical Stimulation and Parallel Microscopic Evaluation 3D Printing and Additive Manufacturing 5 2018 ), S. 115-125 ISSN: 2329-7662 10.1089/3dp.2017.0103 Schriefer T. , Hofmann M. :Assessing the vibrational response and robustness of electronic systems by dissolving time and length scale 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) (Toulouse 15. April 2018 - 18. April 2018 )10.1109/EuroSimE.2018.8369868 https://ieeexplore.ieee.org/document/8369868 Schriefer T. , Hofmann M. , März M. :Vibrational resistance investigation of an IGBT gate driver utilizing Frequency Response Analysis (FRA) and Highly Accelerated Life Test (HALT) 2018 10th International Conference on Integrated Power Electronics Systems (CIPS) (Stuttgart 20. März 2018 - 22. März 2018 )https://ieeexplore.ieee.org/document/8403138 Schrüfer D. , Ellinger M. , Jank M. , Frey L. , Weigel R. , Hagelauer AM. :Circuits with Scaled Metal Oxide Technology for Future TOLAE RF Systems European Microwave Conference (Madrid 23. September 2018 - 28. September 2018 )In: Proceedings of the 48th European Microwave Conference 2018 Steinberger M. , Geiling J. , Oechsner R. , Frey L. :Anode recirculation and purge strategies for PEM fuel cell operation with diluted hydrogen feed gas Applied Energy 232 2018 ), S. 572-582 ISSN: 0306-2619 10.1016/j.apenergy.2018.10.004 Stolzke T. , Dirnecker T. , Schwarz J. , Frey L. :Investigation of magnetic properties from a manganese–zinc–ferrite polymer bonded material International Journal of Applied Electromagnetics and Mechanics Pre-press 2018 ), S. 1-8 ISSN: 1383-5416 10.3233/JAE-171244 Unterreitmeier M. , Nagler O. , Pfitzner L. , Weigel R. , Holmer R. :An acoustic emmission sensor system for thin layer crack detection 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (Aalborg 1. Oktober 2018 - 5. Oktober 2018 )10.1016/j.microrel.2018.07.015 Weiße J. , Hauck M. , Sledziewski T. , Tschiesche M. , Krieger M. , Bauer A. , Mitlehner H. , Frey L. , Erlbacher T. :Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices Materials Science Forum 924 2018 ), S. 184-187 ISSN: 0255-5476 10.4028/www.scientific.net/MSF.924.184 Yu Z. , Zeltner S. , Boettcher N. , Rattmann G. , Leib J. , Bayer C. , Schletz A. , Erlbacher T. , Frey L. :Heterogeneous Integration of Vertical GaN Power Transistor on Si Capacitor for DC-DC Converters 7th Electronic System-Integration Technology Conference, ESTC 2018 10.1109/ESTC.2018.8546362 Zörner A. , Oertel S. , Jank M. , Frey L. , Langenstein B. , Bertsch T. :Human Sweat Analysis Using a Portable Device Based on a Screen-printed Electrolyte Sensor Electroanalysis 30 2018 ), S. 665-671 ISSN: 1040-0397 10.1002/elan.201700672 2017 Albrecht M. , Hürner A. , Erlbacher T. , Bauer A. , Frey L. :Experimental verification of a self-triggered solid-state circuit breaker based on a SiC BIFET Materials Science Forum 897 2017 ), S. 665-668 ISSN: 0255-5476 10.4028/www.scientific.net/MSF.897.665 Banzhaf S. , Kenntner J. , Grieb M. , Schwaiger S. , Erlbacher T. , Bauer AJ. , Frey L. :Stress reduction in high voltage MIS capacitor fabrication 19th International Symposium on Power Electronics, Ee 2017 10.1109/PEE.2017.8171664 Förthner M. , Papenheim M. , Rumler M. , Stumpf F. , Baier L. , Rommel M. , Scheer HC. , Frey L. :Polymerization related deformations in multilayer soft stamps for nanoimprint Journal of Applied Physics 122 2017 ), Art.Nr.: 165305 ISSN: 0021-8979 10.1063/1.5001463 Girschikofsky MG. , Förthner M. , Rommel M. , Frey L. , Hellmann R. :Fabrication of Bragg grating sensors in UV-NIL structured Ormocer waveguides Integrated Optics: Devices, Materials, and Technologies XXI 2017 10.1117/12.2249665 Girschikofsky MG. , Rosenberger M. , Förthner M. , Rommel M. , Frey L. , Hellmann R. :Waveguide Bragg Gratings in Ormocer®s for Temperature Sensing Sensors 17 2017 ), Art.Nr.: 2459 ISSN: 1424-8220 10.3390/s17112459 Hutzler A. , Branscheid R. , Schmutzler T. , Jank M. , Frey L. , Spiecker E. :Controlled silver-shell growth on gold nanorods studied by in situ liquid cell TEM techniques Microscopy Conference 2017 (Lausanne 21. August 2017 - 25. August 2017 )In: Microscopy Conference 2017 (MC 2017) - Proceedings 2017 https://epub.uni-regensburg.de/36099/ Hutzler A. , Matthus C. , Rommel M. , Frey L. :Generalized approach to design multi-layer stacks for enhanced optical detectability of ultrathin layers Applied Physics Letters 110 2017 ), Art.Nr.: 021909 ISSN: 0003-6951 10.1063/1.4973968 Häublein V. , Birnbaum E. , Ryssel H. , Frey L. , Djupmyr M. :Ion Implantation of Polypropylene Films for the Manufacture of Thin Film Capacitors 21st International Conference on Ion Implantation Technology, IIT 2016 10.1109/IIT.2016.7882887 Hürner A. , Erlbacher T. , Bauer A. , Frey L. :Monolithically integrated solid-state-circuit-breaker for high power applications 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 10.4028/www.scientific.net/MSF.897.661 Matthus C. , Burenkov A. , Erlbacher T. :Optimization of 4H-SiC photodiodes as selective UV sensors Materials Science Forum 2017 ), S. 622-625 ISSN: 0255-5476 10.4028/www.scientific.net/MSF.897.622 Matthus C. , Erlbacher T. , Hess A. , Bauer AJ. , Frey L. :Advanced 4H-SiC p-i-n Diode as Highly Sensitive High-Temperature Sensor Up To 460 °C IEEE Transactions on Electron Devices 64 2017 ), S. 3399-3404 ISSN: 0018-9383 10.1109/TED.2017.2711271 Matthus C. , Erlbacher T. , Schöfer B. , Bauer A. , Frey L. :Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration Materials Science Forum 2017 ), S. 618-621 ISSN: 0255-5476 10.4028/www.scientific.net/MSF.897.618 Meister T. , Ellinger F. , Bartha JW. , Berroth M. , Burghartz J. , Claus M. , Frey L. , Gagliardi A. , Grundmann M. , Hesselbarth J. , Klauk H. , Leo K. , Lugli P. , Mannsfeld S. , Manoli Y. , Negra R. , Neumaier D. , Pfeiffer U. , Riedl T. , Scheinert S. , Scherf U. , Thiede A. , Tröster G. , Vossiek M. , Weigel R. , Wenger C. , Alavi G. , Becherer M. , Chavarin CA. , Darwish M. , Ellinger M. , Fan CY. , Fritsch M. , Grotjahn F. , Gunia M. , Haase K. , Hillger P. , Ishida K. , Jank M. , Knobelspies S. , Kuhl M. , Lupina G. , Naghadeh SM. , Münzenrieder N. , Özbek S. , Rasteh M. , Salvatore GA. , Schrüfer D. , Strobel C. , Theisen M. , Tuckmantel C. , Von Wenckstern H. , Wang Z. , Zhang Z. :Program FFlexCom - High frequency flexible bendable electronics for wireless communication systems In: 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS) 2017 10.1109/COMCAS.2017.8244733 Rosenberger M. , Roth G-. , Adelmann B. , Schmauß B. , Hellmann R. :Temperature Referenced Planar Bragg Grating Strain Sensor in fs-Laser Cut COC Specimen IEEE Photonics Technology Letters 2017 )ISSN: 1041-1135 10.1109/LPT.2017.2693401 Schimmel S. , Koch M. , Macher P. , Kimmel AC. , Steigerwald T. , Alt N. , Schlücker E. , Wellmann P. :Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizers Journal of Crystal Growth 479 2017 ), S. 59-66 ISSN: 0022-0248 10.1016/j.jcrysgro.2017.09.027 Schimmel S. , Meisel M. , Hertweck B. , Steigerwald T. , Nebel C. , Alt N. , Schlücker E. , Wellmann P. :Chemical stability of carbon-based inorganic construction materials for in situ x-ray measurements of ammonothermal crystal growth of nitrides 5th German-Swiss Conference on Crystal Growth (Freiburg 8. März 2017 - 10. März 2017 )Steinberg C. , Rumler M. , Manuel RA. , Papenheim M. , Wang S. , Mayer A. , Becker M. , Rommel M. , Scheer HC. :Complex 3D structures via double imprint of hybrid structures and sacrificial mould techniques Microelectronic Engineering 176 2017 ), S. 22-27 ISSN: 0167-9317 10.1016/j.mee.2017.01.009 2016 Albrecht M. , Erlbacher T. , Bauer A. , Frey L. :Potential of 4H-SiC CMOS for high temperature applications using advanced lateral p-MOSFETs Materials Science Forum 858 2016 ), S. 821-824 ISSN: 0255-5476 10.4028/www.scientific.net/MSF.858.821 Banzhaf S. , Schwaiger S. , Erlbacher T. , Bauer A. , Frey L. :Post-Trench Processing of Silicon Deep Trench Capacitors for Power Electronic Applications 10.1109/ISPSD.2016.7520862 Burenkov A. , Matthus C. , Erlbacher T. :Optimization of 4H-SiC UV Photodiode Performance Using Numerical Process and Device Simulation IEEE Sensors Journal 16 2016 ), S. 4246-4252 ISSN: 1530-437X 10.1109/JSEN.2016.2539598 Ditze S. , Endruschat A. , Schriefer T. , Rosskopf A. , Heckel T. :Inductive power transfer system with a rotary transformer for contactless energy transfer on rotating applications 2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016 10.1109/ISCAS.2016.7538876 Endruschat A. , Heckel T. , Reiner R. , Waltereit P. , Quay R. , Ambacher O. , März M. , Eckardt B. , Frey L. :Slew rate control of a 600 V 55 mΩ GaN cascode 4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016 (Fayetteville, AR 7. November 2016 - 9. November 2016 )10.1109/WiPDA.2016.7799963 Frey L. , Förthner M. , Hellmann R. , Rommel M. , Girschikofsky MG. :Waveguide Bragg gratings in Ormocer hybrid polymers Optics Express 24 2016 ), S. 14725-14736 ISSN: 1094-4087 10.1364/OE.24.014725 Förthner M. , Rumler M. , Stumpf F. , Fader R. , Rommel M. , Frey L. , Girschikofsky M. , Belle S. , Hellmann R. , Klein JJ. :Hybrid polymers processed by substrate conformal imprint lithography for the fabrication of planar Bragg gratings Applied Physics A-Materials Science & Processing 122 2016 )ISSN: 0947-8396 10.1007/s00339-016-9767-6 Gruenler S. , Rattmann G. , Erlbacher T. , Bauer AJ. , Frey L. :Monolithic 3D TSV-based high-voltage, high-temperature capacitors Microelectronic Engineering 156 2016 ), S. 19-23 ISSN: 0167-9317 10.1016/j.mee.2016.02.008 Heckel T. , Rettner C. , März M. :Fundamental Efficiency Limits in Power Electronic Systems 2015 IEEE International Telecommunications Energy Conference, INTELEC 2015 10.1109/INTLEC.2015.7572399 Hutzler A. , Branscheid R. , Jank M. , Frey L. , Spiecker E. :Graphene-Supported Microwell Liquid Cell for In Situ Electron Microscopy in Materials Science Microscopy and Microanalysis 22 2016 ), S. 78 - 79 ISSN: 1431-9276 10.1017/S1431927616012423 Hutzler A. , Branscheid R. , Jank M. , Frey L. , Spiecker E. :Graphene‐supported microwell liquid cell for in situ studies in TEM and SEM European Microscopy Congress 2016 (Lyon 28. August 2016 - 2. September 2016 )In: European Microscopy Congress 2016 Volume 1: Instrumentation and Methods 2016 10.1002/9783527808465.EMC2016.6612 Hürner A. , Mitlehner H. , Erlbacher T. , Bauer A. , Frey L. :Conduction loss reduction for bipolar injection field-effect-transistors (BIFET) Trans Tech Publications Ltd 2016 ISBN: 9783035710427 10.4028/www.scientific.net/MSF.858.917 Jelinek M. , Laven JG. , Ganagona N. , Job R. , Schustereder W. , Schulze HJ. , Rommel M. , Frey L. :Metastable defects in proton implanted and annealed silicon Solid State Phenomena 242 2016 ), S. 169-174 ISSN: 1012-0394 10.4028/www.scientific.net/SSP.242.169 Jelinek M. , Laven JG. , Ganagona N. , Schustereder W. , Schulze HJ. , Rommel M. , Frey L. :The efficiency of hydrogen-doping as a function of implantation temperature Trans Tech Publications Ltd 2016 ISBN: 9783038356080 10.4028/www.scientific.net/SSP.242.175 Krach F. , Heckel T. , Frey L. , Bauer A. , Erlbacher T. , März M. :Innovative Monolithic RC-Snubber for Fast Switching Power Modules 9th International Conference on Integrated Power Electronics Systems (CIPS) Krach F. , Thielen N. , Heckel T. , Bauer A. , Erlbacher T. , Frey L. , Heckel T. :Silicon integrated RC snubbers for applications up to 900V with reduced mechanical stress and high manufacturability 2016 ), Art.Nr.: 7548452 ISSN: 15483770 10.1109/DRC.2016.7548452 Kreutzer O. , Heckel T. , März M. :Using SiC MOSFET’s full potential – Switching faster than 200 kV/μs Trans Tech Publications Ltd 2016 ISBN: 9783035710427 10.4028/www.scientific.net/MSF.858.880 Liu X. , Wegener CM. , Polster S. , Jank M. , Roosen A. , Frey L. :Materials Integration for Printed Zinc Oxide Thin-Film Transistors: Engineering of a Fully-Printed Semiconductor/Contact Scheme Journal of Display Technology 12 2016 )ISSN: 1551-319X 10.1109/JDT.2015.2445378 Lorentz V. , Schwarz R. , Heckel T. , März M. , Frey L. , Heckel T. :Integrated galvanically isolated MOSFET and IGBT gate-driver circuit with switching speed control 41st Annual Conference of the IEEE Industrial Electronics Society, IECON 2015 10.1109/IECON.2015.7392158 Matthus C. , Erlbacher T. , Burenkov A. , Bauer A. , Frey L. :Ion implanted 4H-SiC UV pin-diodes for solar radiation detection – Simulation and characterization Materials Science Forum 858 2016 ), S. 1032-1035 ISSN: 0255-5476 10.4028/www.scientific.net/MSF.858.1032 Meric Z. , Mehringer C. , Jank MPM. , Peukert W. , Frey L. :Electrical properties of solution processed layers based on Ge-Si alloy nanoparticles MRS Advances 1 2016 ), S. 2331-2336 ISSN: 2059-8521 10.1557/adv.2016.329 Munoz LE. , Bilyy R. , Biermann MHC. , Kienhoefer D. , Maueröder C. , Hahn J. , Brauner JM. , Weidner D. , Chen J. , Scharin-Mehlmann M. , Janko C. , Friedrich RP. , Mielenz D. , Dumych T. , Lootsik MD. , Schauer C. , Schett G. , Hoffmann M. , Zhao Y. , Herrmann M. :Nanoparticles size-dependently initiate self-limiting NETosis-driven inflammation Proceedings of the National Academy of Sciences of the United States of America 113 2016 ), S. E5856-E5865 ISSN: 0027-8424 10.1073/pnas.1602230113 Oertel S. , Jank M. , Frey L. , Hofmann C. , Lang N. , Struck M. :Screen-printed biochemical sensors for detection of ammonia levels in sweat - Towards integration with vital parameter monitoring sports gear 9th International Conference on Biomedical Electronics and Devices, BIODEVICES 2016 - Part of 9th International Joint Conference on Biomedical Engineering Systems and Technologies, BIOSTEC 2016 10.5220/0005691501600165 Pobegen G. , Weiße J. , Hauck M. , Weber HB. , Krieger M. :On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs Materials Science Forum 858 2016 )ISSN: 0255-5476 10.4028/www.scientific.net/MSF.858.473 Polster S. , Jank M. , Frey L. :Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles Journal of Applied Physics 119 2016 )ISSN: 0021-8979 10.1063/1.4939289 Preuster P. , Wagner L. , Nuß A. , Geiling J. , Steinberger M. , Bösmann A. , Wasserscheid P. :Evaluation of a novel reactor concept for the process intensification and intelligent heat management in the hydrogenation and dehydrogenation of Liquid Organic Hydrogen Carriers 21st World Hydrogen Energy Conference 2016, WHEC 2016 (Saragossa 13. Juni 2016 - 16. Juni 2016 )https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85016937508&origin=inward Rumler M. , Kollmuss M. , Baier L. , Michel F. , Förthner M. , Becker M. , Rommel M. , Frey L. :Combination of direct laser writing and soft lithography molds for combined nano- and microfabrication 10.1117/12.2248219 Sanftl B. , Joffe C. , Trautmann M. , Weigel R. , Kölpin A. :Reliabe Data Link for Power Transfer Control in an Inductive Charging System for Electric Vehicles IEEE MTT-S International Conference on Microwaves for Intelligent Mobility (San Diego, USA In: IEEE MTT-S International Conference on Microwaves for Intelligent Mobility 2016 10.1109/ICMIM.2016.7533929 Schriefer T. , Hofmann M. :Mechanical Reliability of Power Electronic Systems 9th International Conference on Integrated Power Electronics Systems (Nuremberg 8. März 2016 - 10. März 2016 )https://ieeexplore.ieee.org/document/7736747 Spitzer P. , Condic M. , Herrmann M. , Oberstein T. , Scharin-Mehlmann M. , Gilbert D. , Friedrich O. , Groemer T. , Kornhuber J. , Lang R. , Maler JM. :Amyloidogenic amyloid-?-peptide variants induce microbial agglutination and exert antimicrobial activity Scientific Reports 6 2016 ), S. 32228 ISSN: 2045-2322 10.1038/srep32228 Toumi, S. S. , Ouennoughi Z. , Strenger C. , Frey L. :Determination of Fowler-Nordheim tunneling parameters in Metal-Oxide-Semiconductor structure including oxide field correction using a vertical optimization method Solid-State Electronics 122 2016 ), S. 56-63 ISSN: 0038-1101 10.1016/j.sse.2016.04.007 Trautmann M. , Joffe C. , Pflaum F. , Sanftl B. , Weigel R. , Heckel T. , Kölpin A. :Implementation of Simultaneous Energy and Data Transfer in a Contactless Connector IEEE Topical Conference on Wireless Sensors and Sensor Networks (WiSNet) (Austin, TX 10.1109/WISNET.2016.7444333 Wegener CM. , Spiehl D. , Sauer HM. , Mikschl F. , Liu X. , Kölpin N. , Schmidt M. , Jank M. , Dörsam E. , Roosen A. :Flexographic printing of nanoparticulate tin-doped indium oxide inks on PET foils and glass substrates Journal of Materials Science 2016 )ISSN: 0022-2461 10.1007/s10853-016-9772-3 Xie F. , Weiß R. , Weigel R. :Simple Mathematical Operation-Based Calibration Method for Giant Magnetoresistive Current Sensor Applying B-Spline Modeling IEEE Sensors Journal 16 2016 ), S. 4733-4739 ISSN: 1530-437X 10.1109/JSEN.2016.2558468 Zhou X. , Häublein V. , Liu N. , Nguyen NT. , Zolnhofer E. , Tsuchiya H. , Manuela K. , Meyer K. , Schmuki P. , Frey L. :TiO2 Nanotubes: Nitrogen-Ion Implantation at Low Dose Provides Noble-Metal-Free Photocatalytic H-2-Evolution Activity Angewandte Chemie International Edition 55 2016 ), S. 3763-3767 ISSN: 1433-7851 10.1002/anie.201511580 Ziller J. , Dräger T. , Heckel T. :Inductive high data rate transmission for bearing systems IEEE Topical Conference on Wireless Sensors and Sensor Networks, WiSNet 2016 10.1109/WISNET.2016.7444332 2015 Adelmann B. , Hürner A. , Roth GL. , Hellmann R. :Back side ablation of SiC diodes using a q-switched NIR laser Journal of Laser Micro Nanoengineering 10 2015 ), S. 190-194 ISSN: 1880-0688 10.2961/jlmn.2015.02.0016 Banzhaf C. , Grieb M. , Rambach M. , Bauer A. , Frey L. :Impact of post-trench processing on the electrical characteristics of 4H-SiC trench-MOS structures with thick top and bottom oxides Trans Tech Publications Ltd 2015 ISBN: 9783038354789 10.4028/www.scientific.net/MSF.821-823.753 Dudek D. , Fettweis G. , Frey L. , Kissinger D. , Kutter C. , Mathis W. , Lugli P. , Russer P. , Weigel R. , Wolff I. :Hidden Electronics In: Positionspapier des VDE 2015 , S. 1-24 https://www.vde.com/de/fg/gmm/news/documents/vde_pp_hidden\%20electronics_rz_web.pdf Eckardt B. , Heckel T. :High Power Density Automotive Converters using SiC or GaN Power Devices Automotive Power Electronics International Conference (APE) http://www.sia.fr/publications/157-high-power-density-automotive-converters-using-sic-or-gan-power-devices Erlbacher T. , Schwarzmann H. , Bauer AJ. , Doehler GH. , Schreivogel M. , Lutz T. , Guillen FH. , Graf J. , Fix R. , Frey L. :Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors Journal of Vacuum Science & Technology B 33 2015 )ISSN: 1071-1023 10.1116/1.4903054 Frey L. , Osvet A. , Zhou X. , Haeublein V. , Schmuki P. , Frey L. , Spiecker E. , Mackovic M. , Liu N. , Hartmann M. , Nakajima T. , Venkatesan UM. :"Black" TiO2 Nanotubes Formed by High-Energy Proton Implantation Show Noble-Metal-co-Catalyst Free Photocatalytic H2-Evolution Nano Letters 15 2015 ), S. 6815-6820 ISSN: 1530-6984 10.1021/acs.nanolett.5b02663 Fügl M. , Mackh G. , Meissner E. , Frey L. :Assessment of dicing induced damage and residual stress on the mechanical and electrical behavior of chips 2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015 10.1109/ECTC.2015.7159594 Girschikofsky MG. , Förthner M. , Rommel M. , Frey L. , Hellmann R. :Bragg gratings in imprinted Ormocer® waveguides 24th International Conference on Plastic Optical Fibers, POF 2015 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84964659470&origin=inward Grosch J. , Teuber E. , Jank M. , Lorentz V. , März M. , Frey L. :Device optimization and application study of low cost printed temperature sensor for mobile and stationary battery based Energy Storage Systems International Conference on Smart Energy Grid Engineering, SEGE 2015 10.1109/SEGE.2015.7324599 Gruenler S. , Rattmann G. , Erlbacher T. , Bauer AJ. , Frey L. :High-voltage monolithic 3D capacitors based on through-silicon-via technology IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015 10.1109/IITC-MAM.2015.7325655 Heckel T. , Eckhardt B. , März M. , Frey L. , Heckel T. :SiC MOSFETs in hard-switching bidirectional DC/DC converters Trans Tech Publications Ltd 2015 ISBN: 9783038354789 10.4028/www.scientific.net/MSF.821-823.689 Heckel T. , Frey L. :A Novel Charge Based SPICE Model for Nonlinear Device Capacitances 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015 10.1109/WiPDA.2015.7369263 Hofmann M. , Eckardt B. , Heckel T. :Inverter Technology for High-Speed Drives Like Electric Turbochargers 10th ETG/GMM-Symposium on Innovative Small Drives and Micro-Motor Systems (IKMT) Hürner A. , Di Benedetto L. , Erlbacher T. , Mitlehner H. , Bauer A. , Frey L. :Robust double-ring junction termination extension design for high voltage power semiconductor devices based on 4H-SiC Trans Tech Publications Ltd 2015 ISBN: 9783038354789 10.4028/www.scientific.net/MSF.821-823.656 Hürner A. , Erlbacher T. , Mitlehner H. , Bauer A. , Frey L. :Temperature dependent characterization of bipolar injection field- effect-transistors (BiFET) for determining the short-circuit-capability Trans Tech Publications Ltd 2015 ISBN: 9783038354789 10.4028/www.scientific.net/MSF.821-823.806 Jelinek M. , Laven JG. , Kirnstoetter S. , Schustereder W. , Schulze H-. , Rommel M. , Frey L. :A DLTS study of hydrogen doped czochralski-grown silicon Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 365 2015 ), S. 240-243 ISSN: 0168-583X 10.1016/j.nimb.2015.07.078 Kaliya Perumal Veerapandian S. , Beuer S. , Rumler M. , Stumpf F. , Thomas K. , Pillatsch L. , Michler J. , Frey L. , Rommel M. :Comparison of silicon and 4H silicon carbide patterning using focused ion beams Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 365 2015 ), S. 44-49 ISSN: 0168-583X 10.1016/j.nimb.2015.07.079 Krach F. , Schwarzmann H. , Bauer A. , Erlbacher T. , Frey L. :Silicon nitride, a high potential dielectric for 600 v integrated RC-snubber applications Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics 33 2015 ), Art.Nr.: 01A112 ISSN: 2166-2754 10.1116/1.4906082 Noll S. , Rambach M. , Grieb M. , Scholten D. , Bauer A. , Frey L. :Influence of annealing, oxidation and doping on conduction-band near interface traps in 4H-SiC characterized by low temperature conductance measurements Trans Tech Publications Ltd 2015 ISBN: 9783038354789 10.4028/www.scientific.net/MSF.821-823.476 Paskaleva A. , Rommel M. , Hutzler A. , Spassov D. , Bauer A. :Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping ACS Applied Materials and Interfaces 7 2015 ), S. 17032 - 17043 ISSN: 1944-8244 10.1021/acsami.5b03071 http://pubs.acs.org/doi/abs/10.1021/acsami.5b03071 Paskaleva A. , Weinreich W. , Bauer A. , Lemberger M. , Frey L. :Improved electrical behavior of ZrO2-based MIM structures by optimizing the O3 oxidation pulse time Materials Science in Semiconductor Processing 29 2015 ), S. 124-131 ISSN: 1369-8001 10.1016/j.mssp.2013.12.030 Peukert W. , Meric Z. , Mehringer C. , Jank M. , Frey L. , Karpstein N. :Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration Physical Chemistry Chemical Physics 17 2015 ), S. 22106-22114 ISSN: 1463-9076 10.1039/c5cp03321g Rouag, N. , Ouennoughi Z. , Rommel M. , Murakami K. , Frey L. :Current conduction mechanism of MIS devices using multidimensional minimization system program Microelectronics Reliability 55 2015 ), S. 1028-1034 ISSN: 0026-2714 10.1016/j.microrel.2015.05.001 Salinaro A. , Pobegen G. , Aichinger T. , Zippelius B. , Peters DP. , Friedrichs P. , Frey L. :Charge pumping measurements on differently passivated lateral 4H-SiC MOSFETs IEEE Transactions on Electron Devices 62 2015 ), S. 155-163 ISSN: 0018-9383 10.1109/TED.2014.2372874 Stadler A. , Stolzke T. , Gulden C. :Design and simulation of thermally optimized filter inductors for a 1mw windmill demonstrator 2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84997418748∨igin=inward Stadler A. , Stolzke T. , Gulden C. :Optimized filter inductors for a 1MW windmill demonstrator with an objective to reduced converter size 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015 10.1109/EPE.2015.7309130 Stolzke T. , Stadler A. , Gulden C. :Calculating phase currents for high frequency three phase inductors via the inductance matrix 2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84997417432&origin=inward Szwarc R. , Frey L. , Weber H. , Moder I. , Erlbacher T. , Rommel M. , Bauer AJ. :Modelling of the electrochemical etch stop with high reverse bias across pn-junctions 26th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2015 10.1109/ASMC.2015.7164437 Wegener CM. , Spiehl D. , Mikschl F. , Liu X. , Roosen A. :Printing of Ultrathin Nanoparticulate Indium Tin Oxide Structures International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies (CICMT) 2014 Banzhaf C. , Grieb M. , Trautmann A. , Bauer A. , Frey L. :Influence of diverse post-trench processes on the electrical performance of 4H-SiC MOS structures Trans Tech Publications Ltd 2014 ISBN: 9783038350101 10.4028/www.scientific.net/MSF.778-780.595 Banzhaf C. , Grieb M. , Trautmann A. , Bauer A. , Frey L. :Investigation of trenched and high temperature annealed 4H-SiC Trans Tech Publications Ltd 2014 ISBN: 9783038350101 10.4028/www.scientific.net/MSF.778-780.742 Erlbacher T. , Schwarzmann H. , Krach F. , Bauer AJ. , Berberich SE. , Kasko I. , Frey L. :Reliability of monolithic RC-snubbers in MOS-based power modules 5th Electronics System-Integration Technology Conference, ESTC 2014 10.1109/ESTC.2014.6962794 Erlekampf J. , Seebeck J. , Savva P. , Meissner E. , Friedrich J. , Alt N. , Schlücker E. , Frey L. :Numerical time-dependent 3D simulation of flow pattern and heat distribution in an ammonothermal system with various baffle shapes Journal of Crystal Growth 403 2014 ), S. 96-104 ISSN: 0022-0248 10.1016/j.jcrysgro.2014.06.007 Frey L. , Niedermeier MT. , Wenger MM. , Filimon R. , Sedlacek V. , Lorentz VR. , Fort C. , März M. , Ferrieux JP. :Galvanically isolated differential data transmission using capacitive coupling and a modified Manchester algorithm for smart power converters 2014 IEEE 23rd International Symposium on Industrial Electronics, ISIE 2014 (Istanbul 10.1109/ISIE.2014.6865029 Frey L. , Trapnauskas J. , Rommel M. , Bauer AJ. , Frey L. :Thickness mapping of high-κ dielectrics at the nanoscale Applied Physics Letters 104 2014 ), Art.Nr.: 052907 ISSN: 0003-6951 10.1063/1.4863947 Fügl M. , Mackh G. , Meissner E. , Frey L. :Analytical stress characterization after different chip separation methods Microelectronics Reliability 54 2014 ), S. 1735-1740 ISSN: 0026-2714 10.1016/j.microrel.2014.07.086 Haublein V. , Birnbaum E. , Ryssel H. , Frey L. , Grimm W. :Modification of polypropylene films for thin film capacitors by ion implantation 20th International Conference on Ion Implantation Technology, IIT 2014 10.1109/IIT.2014.6939968 Heckel T. , Frey L. , Zeltner S. :Characterization and Application of 600 V Normally-Off GaN Transistors in Hard Switching DC/DC Converters 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 (Waikoloa, HI 10.1109/ISPSD.2014.6855976 Hilden T. , Jänker P. , Frey L. :Comparison of Si/SiC semiconductor performance using experiment-based simulation International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2014 (Nuremberg https://www.scopus.com/record/display.uri?eid=2-s2.0-84906535889∨igin=inward Hürner A. , Bonse C. , Clemmer G. , Kallinger B. , Heckel T. , Erlbacher T. , Mitlehner H. , Häublein V. , Bauer A. , Frey L. , Heckel T. :Temperature and electrical field dependence of the ambipolar mobility in n-doped 4H-SiC Trans Tech Publications Ltd 2014 ISBN: 9783038350101 10.4028/www.scientific.net/MSF.778-780.487 Hürner A. , Mitlehner H. , Erlbacher T. , Bauer A. , Frey L. :Experimental analysis of bipolar SiC-devices for future energy distribution systems 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014 10.1109/EPE.2014.6910847 Jelinek M. , Laven JG. , Job R. , Schustereder W. , Schulze HJ. , Rommel M. , Frey L. :New method to increase the doping efficiency of proton implantation in a high-dose regime 13th High Purity and High Mobility Semiconductor Symposium - 2014 ECS and SMEQ Joint International Meeting 10.1149/06411.0199ecst Jelinek M. , Laven JG. , Rommel M. , Schustereder W. , Schulze HJ. , Frey L. , Job R. :Deep-level defects in high-dose proton implanted and high-temperature annealed silicon 13th High Purity and High Mobility Semiconductor Symposium - 2014 ECS and SMEQ Joint International Meeting 10.1149/06411.0173ecst Jelinek M. , Schustereder W. , Laven JG. , Schulze HJ. , Kirnstoetter S. , Rommel M. , Frey L. :MeV-proton channeling in crystalline silicon 20th International Conference on Ion Implantation Technology, IIT 2014 10.1109/IIT.2014.6940059 Kilian D. , Polster S. , Vogeler I. , Frey L. , Jank M. , Peukert W. :Pulsed direct flame deposition and thermal annealing of transparent amorphous indium zinc oxide films as active layers in field effect transistors ACS Applied Materials and Interfaces 6 2014 ), S. 12245-12251 ISSN: 1944-8244 10.1021/am501837u Koller TM. , Schmid S. , Sachnov S. , Rausch MH. , Wasserscheid P. , Fröba AP. :Measurement and Prediction of the Thermal Conductivity of Tricyanomethanide- and Tetracyanoborate-Based Imidazolium Ionic Liquids International Journal of Thermophysics 35 2014 ), S. 195-217 ISSN: 0195-928X 10.1007/s10765-014-1617-1 Landwehr J. , Fader R. , Rumler M. , Rommel M. , Bauer A. , Frey L. , Simon B. , Fodor B. , Petrik P. , Schiener A. , Winter B. , Spiecker E. :Optical polymers with tunable refractive index for nanoimprint technologies Nanotechnology 25 2014 ), S. Article number 505301 ISSN: 1361-6528 10.1088/0957-4484/25/50/505301 Laven JG. , Jelinek M. , Job R. , Schustereder W. , Schulze H-. , Rommel M. , Frey L. :DLTS characterization of proton-implanted silicon under varying annealing conditions Physica Status Solidi 251 2014 ), S. 2189-2192 ISSN: 0031-8957 10.1002/pssb.201400028 Murakami K. , Rommel M. , Hudec B. , Rosova A. , Husekova K. , Dobrocka E. , Rammula R. , Kasikov A. , Han JH. , Lee W. , Song SJ. , Paskaleva A. , Bauer AJ. , Frey L. , Froehlich K. , Aarik J. , Hwang CS. :Nanoscale characterization of TiO2 films grown by atomic layer deposition on RuO2 electrodes ACS Applied Materials and Interfaces 6 2014 ), S. 2486-2492 ISSN: 1944-8244 10.1021/am4049139 Noll S. , Rambach M. , Grieb M. , Scholten D. , Bauer A. , Frey L. :Effect of shallow n-doping on field effect mobility in p-doped channels of 4H-SiC MOS field effect transistors Trans Tech Publications Ltd 2014 ISBN: 9783038350101 10.4028/www.scientific.net/MSF.778-780.702 Oertel S. , Jank M. , Teuber E. , Bauer A. , Frey L. :High-mobility metal-oxide thin-film transistors by spray deposition of environmentally friendly precursors Thin Solid Films 553 2014 ), S. 114-117 ISSN: 0040-6090 10.1016/j.tsf.2013.11.061 Scharin M. , Rommel M. , Dirnecker T. , Marhenke J. , Herrmann B. , Rumler M. , Fader R. , Frey L. , Herrmann M. :Bioactivation of plane and patterned PDMS thin films by wettability engineering BioNanoScience 4 2014 ), S. 251-262 ISSN: 2191-1630 10.1007/s12668-014-0145-6 Schimmel S. , Künecke U. , Steigerwald T. , Hertweck B. , Alt N. , Schlücker E. , Wellmann P. :In Situ Visualization of GaN Crystals in Ammonothermal High Pressure Autoclaves by X-ray Imaging German Conference on Crystal Growth (Halle 12. März 2014 - 14. März 2014 )Stadler A. , Huber R. , Stolzke T. , Gulden C. :Analytical calculation of copper losses in litz-wire windings of gapped inductors IEEE Transactions on Magnetics 50 2014 ), Art.Nr.: 6748958 ISSN: 0018-9464 10.1109/TMAG.2013.2282333 Stadler A. , Stolzke T. , Gulden C. :A new generation of modular power inductors with minimum thermal resistance 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014 10.1109/EPE.2014.6910771 Stadler A. , Stolzke T. , Gulden C. :High frequency high current filter inductors with minimum thermal resistance 16th International Power Electronics and Motion Control Conference and Exposition, PEMC 2014 10.1109/EPEPEMC.2014.6980507 Strenger C. , Uhnevionak V. , Mortet V. , Ortiz G. , Erlbacher T. , Burenkov A. , Bauer A. , Cristiano F. , Bedel-Pereira E. , Pichler P. , Ryssel H. , Frey L. :Systematic analysis of the high-and low-field channel mobility in lateral 4H-SiC MOSFETs 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 (Miyazaki In: Silicon Carbide and Related Materials 2013 2014 10.4028/www.scientific.net/MSF.778-780.583 Thesen MW. , Nees D. , Ruttloff S. , Rumler M. , Rommel M. , Schlachter F. , Grützner S. , Vogler M. , Schleunitz A. , Grützner G. :Inkjetable and photo-curable resists for large-area and high-throughput roll-to-roll nanoimprint lithography Journal of Micro-Nanolithography MEMS and MOEMS 13 2014 )ISSN: 1932-5150 10.1117/1.JMM.13.4.043003 Thesen MW. , Rumler M. , Schlachter F. , Grützner S. , Moormann C. , Rommel M. , Nees D. , Ruttloff S. , Pfirrmann S. , Vogler M. , Schleunitz A. , Grützner G. :Enabling Large Area and High Throughput Roll-to-Roll NIL by Novel Inkjetable and Photo-curable NIL-Resists 10.1117/12.2046279 2013 Adelmann B. , Hürner A. , Schlegel T. , Bauer A. , Frey L. , Hellmann R. :Laser alloying nickel on 4H-silicon carbide substrate to generate ohmic contacts Journal of Laser Micro Nanoengineering 8 2013 ), S. 97-101 ISSN: 1880-0688 10.2961/jlmn.2013.01.0019 Banzhaf C. , Grieb M. , Trautmann A. , Bauer A. , Frey L. :Characterization of diverse gate oxides on 4H-SiC 3D trench-MOS structures 2013 ISBN: 9783037856246 10.4028/www.scientific.net/MSF.740-742.691 Baum M. , Polster S. , Jank M. , Alexeev I. , Frey L. , Schmidt M. :Laser melting of nanoparticulate transparent conductive oxide thin films Journal of Laser Micro Nanoengineering 8 2013 ), S. 144-148 ISSN: 1880-0688 10.2961/jlmn.2013.02.0005 Behrens T. , Suenner T. , Geinitz E. , Schletz A. , Frey L. :Optimization of copper top-side metallization for high performance SiC-devices 2013 ISBN: 9783037856246 10.4028/www.scientific.net/MSF.740-742.801 Fader R. , Landwehr J. , Rumler M. , Rommel M. , Bauer A. , Frey L. , Voelkel R. , Brehm M. , Kraft A. :Functional epoxy polymer for direct nano-imprinting of micro-optical elements Microelectronic Engineering 110 2013 ), S. 90-93 ISSN: 0167-9317 10.1016/j.mee.2013.02.030 Fader R. , Rommel M. , Bauer A. , Rumler M. , Frey L. , Verschuuren MA. , Van De Laar R. , Ji R. , Schoembs U. :Accuracy of wafer level alignment with substrate conformal imprint lithography Journal of Vacuum Science & Technology B 31 2013 ), S. 6FB02 ISSN: 1071-1023 10.1116/1.4824696 Hackenberg M. , Rommel M. , Rumler M. , Lorenz J. , Pichler P. , Huet K. , Negro R. , Fisicaro . , La Magna A. , Taleb N. , Quillec M. :Melt Depth and Time Variations during Pulsed Laser Thermal Annealing with One and More Pulses, In: Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European 2013 , S. 214-217 10.1109/ESSDERC.2013.6818857 Häublein V. , Temmel G. , Mitlehner H. , Rattmann G. , Strenger C. , Hürner A. , Bauer A. , Ryssel H. , Frey L. :Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC 2013 ISBN: 9783037856246 10.4028/www.scientific.net/MSF.740-742.887 Hürner A. , Schlegl T. , Adelmann B. , Mitlehner H. , Hellmann R. , Bauer A. , Frey L. :Alloying of ohmic contacts to n-type 4H-SiC via laser irradiation 2013 ISBN: 9783037856246 10.4028/www.scientific.net/MSF.740-742.773 Iglesias V. , Martin-Martinez J. , Porti M. , Rodriguez R. , Nafria M. , Aymerich X. , Erlbacher T. , Rommel M. , Murakami K. , Bauer AJ. , Frey L. , Bersuker G. :Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries Microelectronic Engineering 109 2013 ), S. 129-132 ISSN: 0167-9317 10.1016/j.mee.2013.03.022 Jokubavicius V. , Huang HH. , Schimmel S. , Liljedahl R. , Yakimova R. , Syväjärvi M. :Towards bulk-like 3C-SiC growth using low off-axis substrates Materials Science Forum 740-742 2013 ), S. 275-278 ISSN: 0255-5476 10.4028/www.scientific.net/msf.740-742.275 Kölpin N. , Wegener CM. , Teuber E. , Polster S. , Frey L. , Roosen A. :Conceptional design of nano-particulate ITO inks for inkjet printing of electron devices Journal of Materials Science 48 2013 ), S. 1623-1631 ISSN: 0022-2461 10.1007/s10853-012-6919-8 Laven JG. , Job R. , Hans Joachim S. , Niedernostheide FJ. , Schustereder W. , Frey L. :Activation and dissociation of proton-induced donor profiles in silicon ECS Journal of Solid State Science and Technology 2 2013 )ISSN: 2162-8769 10.1149/2.028309jss Noll S. , Scholten D. , Grieb M. , Bauer A. , Frey L. :Electrical impact of the aluminum p-implant annealing on lateral MOSFET transistors on 4H-SiC n-epi 2013 ISBN: 9783037856246 10.4028/www.scientific.net/MSF.740-742.521 Ouennoughi Z. , Strenger C. , Bourouba F. , Haeublein V. , Ryssel H. , Frey L. :Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC Microelectronics Reliability 53 2013 ), S. 1841-1847 ISSN: 0026-2714 10.1016/j.microrel.2013.06.009 Rommel M. , Jambreck JD. , Lemberger M. , Bauer A. , Frey L. , Murakami K. , Richter C. , Weinzierl P. :Influence of parasitic capacitances on conductive AFM I-V measurements and approaches for its reduction Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics 31 2013 ), Art.Nr.: 01A108 ISSN: 2166-2754 10.1116/1.4768679 Rommel M. , Rumler M. , Haas A. , Bauer AJ. , Frey L. :Processing of silicon nanostructures by Ga+ resistless lithography and reactive ion etching Microelectronic Engineering 110 2013 ), S. 177-182 ISSN: 0167-9317 10.1016/j.mee.2013.03.081 Rumler M. , Fader R. , Haas A. , Rommel M. , Bauer A. , Frey L. :Evaluation of resistless Ga+ beam lithography for UV NIL stamp fabrication Nanotechnology 24 2013 ), S. 365302 ISSN: 0957-4484 10.1088/0957-4484/24/36/365302 Stadler A. , Huber R. , Stolzke T. , Gulden C. :The simulation of copper losses in litz-wire windings considering air gap fringing fields International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2013 (Nuremberg https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84906347177∨igin=inward Strenger C. , Uhnevionak V. , Burenkov A. , Bauer A. , Pichler P. , Erlbacher T. , Ryssel H. , Frey L. :Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs 10.1149/05804.0071ecst 2012 Alt NS. , Meissner E. , Schlücker E. , Frey L. :In situ monitoring technologies for ammonthermal reactors Physica Status Solidi (C) Current Topics in Solid State Physics 9 2012 ), S. 436-439 ISSN: 1862-6351 10.1002/pssc.201100361 Baum M. , Polster S. , Jank M. , Alexeev I. , Frey L. , Schmidt M. :Efficient laser induced consolidation of nanoparticulate ZnO thin films with reduced thermal budget Applied Physics A-Materials Science & Processing 107 2012 ), S. 269-273 ISSN: 0947-8396 10.1007/s00339-012-6871-0 Daves W. , Krauss A. , Haeublein V. , Bauer A. , Frey L. :4H-SiC MOSFETs with a stable protective coating for harsh environment applications 2012 ISBN: 9783037854198 10.4028/www.scientific.net/MSF.717-720.1089 Daves W. , Krauß A. , Häublein V. , Bauer A. , Frey L. :Structural and reliability analysis of ohmic contacts to SiC with a stable protective coating for harsh environment applications ECS Journal of Solid State Science and Technology 1 2012 )ISSN: 2162-8769 10.1149/2.019201jss Erlbacher T. , Bauer AJ. , Frey L. :Significant on-resistance reduction of LDMOS devices by intermitted trench gates integration IEEE Transactions on Electron Devices 59 2012 ), S. 3470-3476 ISSN: 0018-9383 10.1109/TED.2012.2220777 Erlbacher T. , Bickermann M. , Kallinger B. , Meissner E. , Bauer A. , Frey L. :Ohmic and rectifying contacts on bulk AlN for radiation detector applications Physica Status Solidi (C) Current Topics in Solid State Physics 9 2012 ), S. 968-971 ISSN: 1862-6351 10.1002/pssc.201100341 Erlbacher T. , Schwarzmann H. , Bauer AJ. , Berberich SE. , vom Dorp J. , Frey L. :Improving module performance and reliability in power electronic applications by monolithic integration of RC-snubbers 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 (Bruges 10.1109/ISPSD.2012.6229078 Fader R. , Schmitt H. , Rommel M. , Bauer AJ. , Frey L. , Ji R. , Hornung M. , Brehm M. , Vogler M. :Novel organic polymer for UV-enhanced substrate conformal imprint lithography Microelectronic Engineering 98 2012 ), S. 238-241 ISSN: 0167-9317 10.1016/j.mee.2012.07.010 Frey L. , Hürner A. , Bauer A. , Erlbacher T. :Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications Solid-State Electronics 75 2012 ), S. 33-36 ISSN: 0038-1101 10.1016/j.sse.2012.05.004 Hilden T. , Janker P. , Frey L. :Reverse recovery of All-SiC switches International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2012 (Nuremberg https://www.scopus.com/record/display.uri?eid=2-s2.0-84874123396∨igin=inward Hofmann M. , Schletz A. , Domes K. , März M. , Frey L. :Modular inverter power electronic for intelligent e-drives 2012 2nd International Electric Drives Production Conference, EDPC 2012 (Nuremberg 10.1109/EDPC.2012.6425132 Häublein V. , Ryssel H. , Frey L. :Purity of ion beams: Analysis and simulation of mass spectra and mass interferences in ion implantation Advances in Materials Science and Engineering 2012 2012 ), Art.Nr.: 610150 ISSN: 1687-8434 10.1155/2012/610150 Krach F. , Hertel S. , Waldmann D. , Jobst J. , Krieger M. , Reshanov S. , Schoner A. , Weber HB. :A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel Applied Physics Letters 100 2012 ), S. 122102 ISSN: 0003-6951 10.1063/1.3695157 Laven J. , Job R. , Schulze H-. , Niedernostheide FJ. , Schustereder W. , Frey L. :The thermal budget of hydrogen-related donor profiles: Diffusion-limited activation and thermal dissociation 12th High Purity Silicon Symposium - 222nd ECS Meeting (Honolulu, HI 10.1149/05005.0161ecst Lorentz V. , Wenger M. , Giegerich M. , Zeltner S. , März M. , Frey L. :Smart battery cell monitoring with contactless data transmission 16th International Forum on Advanced Microsystems for Automotive Applications, AMAA 2012 (Berlin 10.1007/978-3-642-29673-4_2 Lorentz V. , Wenger M. , Grosch J. , Giegerich M. , Jank M. , März M. , Frey L. :Novel cost-efficient contactless distributed monitoring concept for smart battery cells 21st IEEE International Symposium on Industrial Electronics, ISIE 2012 (Hangzhou 10.1109/ISIE.2012.6237285 Maier R. , Haeublein V. , Ryssel H. , Völlm H. , Feili D. , Seidel H. , Frey L. :Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium 19th International Conference on Ion Implantation Technology 2012, IIT 2012 (Valladolid 10.1063/1.4766542 Mueller J. , Boescke TS. , Schroeder U. , Hoffmann R. , Mikolajick T. , Frey L. :Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO 2 IEEE Electron Device Letters 33 2012 ), S. 185-187 ISSN: 0741-3106 10.1109/LED.2011.2177435 Mueller J. , Boescke TS. , Schroeder U. , Mueller S. , Braeuhaus D. , Boettger U. , Frey L. , Mikolajick T. :Ferroelectricity in simple binary ZrO 2 and HfO 2 Nano Letters 12 2012 ), S. 4318-4323 ISSN: 1530-6984 10.1021/nl302049k Roll G. , Jakschik S. , Goldmann M. , Wachowiak A. , Mikolajick T. , Frey L. :Intrinsic MOSFET leakage of high-k peripheral DRAM devices: Measurement and simulation 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 (Hsinchu 10.1109/VLSI-TSA.2012.6210165 Rommel M. , Bauer AJ. , Frey L. :Simple and efficient method to fabricate nano cone arrays by FIB milling demonstrated on planar substrates and on protruded structures Microelectronic Engineering 98 2012 ), S. 242-245 ISSN: 0167-9317 10.1016/j.mee.2012.07.009 Rumler M. , Rommel M. , Erlekampf J. , Azizi M. , Geiger T. , Bauer AJ. , Meissner E. , Frey L. :Characterization of grain boundaries in multicrystalline silicon with high lateral resolution using conductive atomic force microscopy Journal of Applied Physics 112 2012 ), Art.Nr.: 034909 ISSN: 0021-8979 10.1063/1.4746742 Schmitt H. , Duempelmann P. , Fader R. , Rommel M. , Bauer AJ. , Frey L. , Brehm M. , Kraft A. :Life time evaluation of PDMS stamps for UV-enhanced substrate conformal imprint lithography Microelectronic Engineering 98 2012 ), S. 275-278 ISSN: 0167-9317 10.1016/j.mee.2012.04.032 Schwarzmann H. , Erlbacher T. , Bauer A. , Ryssel H. , Frey L. :Amplitude modulated resonant push-pull driver for piezoelectric transformers in switching power applications 2012 7th International Conference on Integrated Power Electronics Systems, CIPS 2012 (Nuremberg https://www.scopus.com/record/display.uri?eid=2-s2.0-84881091503∨igin=inward Stadler A. , Gulden C. , Stolzke T. :Nonlinear inductors for active power factor correction circuits 15th International Power Electronics and Motion Control Conference and Exposition, EPE-PEMC 2012 ECCE Europe (Novi Sad 10.1109/EPEPEMC.2012.6397508 Stadler A. , Stolzke T. , Gulden C. :Nonlinear power inductors for large current crest factors International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2012 (Nuremberg https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84874154772∨igin=inward 2011 Bickermann M. , Schimmel S. , Epelbaum B. , Filip O. , Heimann P. , Nagata S. , Winnacker A. :Structural defects in aluminium nitride bulk crystals visualized by cathodoluminescence maps Physica Status Solidi (C) Current Topics in Solid State Physics 8 2011 ), S. 2235–2238 ISSN: 1862-6351 10.1002/pssc.201000864 Daves W. , Krauss A. , Behnel N. , Haeublein V. , Bauer A. , Frey L. :Amorphous silicon carbide thin films (a-SiC:H) deposited by plasma-enhanced chemical vapor deposition as protective coatings for harsh environment applications Thin Solid Films 519 2011 ), S. 5892-5898 ISSN: 0040-6090 10.1016/j.tsf.2011.02.089 Daves W. , Krauss A. , Haeublein V. , Bauer AJ. , Frey L. :Enhancement of the stability of Ti and Ni ohmic contacts to 4H-SiC with a stable protective coating for harsh environment applications Journal of Electronic Materials 40 2011 ), S. 1990-1997 ISSN: 0361-5235 10.1007/s11664-011-1681-2 Daves W. , Krauss A. , Häublein V. , Bauer A. , Frey L. :Electrical characterization of lateral 4H-SiC MOSFETs in the temperature range of 25 to 600 °C for harsh environment applications 2011 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2011 (Oxford https://www.scopus.com/record/display.uri?eid=2-s2.0-84876889044∨igin=inward Daves W. , Krauss A. , Le-Huu M. , Kronmüller S. , Haeublein V. , Bauer A. , Frey L. :Comparative study on metallization and passivation materials for high temperature sensor applications 2011 ISBN: 9783037850794 10.4028/www.scientific.net/MSF.679-680.449 Erlbacher T. , Yanev VC. , Rommel M. , Bauer A. , Frey L. :Gate oxide reliability at the nanoscale evaluated by combining conductive atomic force microscopy and constant voltage stress Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 29 2011 ), S. 01AB08 ISSN: 0734-211X 10.1116/1.3532820 Fet A. , Haeublein V. , Bauer AJ. , Ryssel H. , Frey L. :Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics 29 2011 )ISSN: 2166-2754 10.1116/1.3521471 Frey L. , Le-Huu M. , Grieb M. , Schrey F. , Schmitt H. , Haeublein V. , Bauer A. , Ryssel H. :4H-SiC n-MOSFET logic circuits for high temperature operation 2011 ISBN: 9783037850794 10.4028/www.scientific.net/MSF.679-680.734 Garcia E. , Sültrop C. , Hausotte T. :Verbesserung der Detektion sphärischer Marker für die optische Navigationschirurgie. 10. Jahrestagung der Deutschen Gesellschaft für Computer- und Roboterassistierte Chirurgie (Magedeburg 15. September 2011 - 16. September 2011 )In: Bugert O, Schipper J, Zachow S (Hrsg.): Proceedings, 10. Jahrestagung der Deutschen Gesellschaft für Computer- und Roboterassistierte Chirurgie 2011 Hofmann M. , Eckhardt B. , März M. , Frey L. :Thermal characterization of an axle-twin-drive with system integrated double-inverter 1st International Electric Drives Production Conference, EDPC-2011 (Nuremberg 10.1109/EDPC.2011.6085560 Huang J. , Ujwal R. , Lemberger M. , Jank M. , Polster S. , Ryssel H. , Frey L. :Effects of oxygen and forming gas annealing on ZnO TFTs 2010 MRS Fall Meeting (Boston, MA 10.1557/opl.2011.1144 Jambreck J. , Böhmler M. , Rommel M. , Hartschuh A. , Bauer A. , Frey L. :Light confinement by structured metal tips for antenna-based scanning near-field optical microscopy Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors V (San Diego, CA 10.1117/12.893306 Jambreck JD. , Yanev V. , Schmitt H. , Rommel M. , Bauer AJ. , Frey L. :Manufacturing, characterization, and application of nanoimprinted metallic probe demonstrators for electrical scanning probe microscopy Microelectronic Engineering 88 2011 ), S. 2584-2588 ISSN: 0167-9317 10.1016/j.mee.2010.12.022 Jank M. , Frey L. , Peukert W. , Körmer R. , Wu J. , Otto M. :EPR investigations of non-oxidized silicon nanoparticles from thermal pyrolysis of silane Physica Status Solidi 5 2011 ), S. 244-246 ISSN: 0031-8957 10.1002/pssr.201105208 Kaiser RJ. , Koffel S. , Pichler P. , Bauer AJ. , Amon B. , Frey L. , Ryssel H. :Germanium substrate loss during thermal processing Microelectronic Engineering 88 2011 ), S. 499-502 ISSN: 0167-9317 10.1016/j.mee.2010.08.031 Koffel S. , Kaiser RJ. , Bauer AJ. , Amon B. , Pichler P. , Lorenz J. , Frey L. , Scheiblin P. , Mazzocchi V. , Barnes J-. , Claverie A. :Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium Microelectronic Engineering 88 2011 ), S. 458-461 ISSN: 0167-9317 10.1016/j.mee.2010.09.023 Laven J. , Hans Joachim S. , Häublein V. , Niedernostheide FJ. , Ryssel H. , Frey L. :Dopant profiles in silicon created by MeV hydrogen implantation: Influence of annealing parameters Physica Status Solidi (C) Current Topics in Solid State Physics 8 2011 ), S. 697--700 ISSN: 1862-6351 10.1002/pssc.201000161 Laven JG. , Job R. , Schustereder W. , Hans Joachim S. , Niedernostheide FJ. , Schulze H. , Frey L. :Conversion efficiency of radiation damage profiles into hydrogenrelated donor profiles Trans Tech Publications Ltd 2011 ISBN: 9783037852323 10.4028/www.scientific.net/SSP.178-179.375 Le-Huu M. , Schmitt H. , Noll S. , Grieb M. , Schrey FF. , Bauer AJ. , Frey L. , Ryssel H. :Investigation of the reliability of 4H-SiC MOS devices for high temperature applications Microelectronics Reliability 51 2011 ), S. 1346-1350 ISSN: 0026-2714 10.1016/j.microrel.2011.03.015 Lorentz VRH. , Schwarzmann H. , März M. , Bauer AJ. , Ryssel H. , Frey L. , Poure P. , Braun F. :A novel PWM control for a bi-directional full-bridge DC-DC converter with smooth conversion mode transitions International Journal of Electronics 98 2011 ), S. 1025-1054 ISSN: 0020-7217 10.1080/00207217.2011.567035 Mueller J. , Boescke TS. , Braeuhaus D. , Schroeder U. , Boettger U. , Sundqvist J. , Kuecher P. , Mikolajick T. , Frey L. :Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications Applied Physics Letters 99 2011 ), Art.Nr.: 112901 ISSN: 0003-6951 10.1063/1.3636417 Murakami K. , Rommel M. , Yanev V. , Bauer A. , Frey L. :Current voltage characteristics through grains and grain boundaries of high-k dielectric thin films measured by tunneling atomic force microscopy Frontiers of Characterization and Metrology for Nanoelectronics: 2011 (Grenoble 10.1063/1.3657879 Murakami K. , Rommel M. , Yanev V. , Erlbacher T. , Bauer AJ. , Frey L. :A highly sensitive evaluation method for the determination of different current conduction mechanisms through dielectric layers Journal of Applied Physics 110 2011 ), Art.Nr.: 054104 ISSN: 0021-8979 10.1063/1.3631088 Müller J. , Schröder UP. , Böschke TS. , Müller I. , Böttger U. , Wilde L. , Sundqvist J. , Lemberger M. , Kücher P. , Mikolajick T. , Frey L. :Ferroelectricity in yttrium-doped hafnium oxide Journal of Applied Physics 110 2011 ), S. Article number 114113 ISSN: 0021-8979 10.1063/1.3667205 Paskaleva A. , Lemberger M. , Bauer AJ. , Frey L. :Implication of oxygen vacancies on current conduction mechanisms in TiN/Zr1-xAlxO2/TiN metal-insulator-metal structures Journal of Applied Physics 109 2011 ), Art.Nr.: 076101 ISSN: 0021-8979 10.1063/1.3565056 Roll G. , Goldbach M. , Frey L. :Leakage current and defect characterization of p+n-source/drain diodes Microelectronics Reliability 51 2011 ), S. 2081-2085 ISSN: 0026-2714 10.1016/j.microrel.2011.05.015 Roll G. , Jakschik S. , Burenkov A. , Goldbach M. , Mikolajick T. , Frey L. :Impact of carbon junction implant on leakage currents and defect distribution: Measurement and simulation Solid-State Electronics 2011 ), S. 170-176 ISSN: 0038-1101 10.1016/j.sse.2011.06.016 Roll G. , Jakschik S. , Goldbach M. , Wachowiak A. , Mikolajick T. , Frey L. :Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 29 2011 )ISSN: 0734-211X 10.1116/1.3521479 Schmitt H. , Haeublein V. , Bauer A. , Frey L. :Influence of annealing parameters on surface roughness, mobility, and contact resistance of aluminium implanted 4H SiC 2011 ISBN: 9783037850794 10.4028/www.scientific.net/MSF.679-680.417 Schneider O. , Epple P. , Teuber E. , Meyer B. , Jank MPM. , Rauh C. , Delgado A. :Jet printing of colloidal solutions - Numerical modeling and experimental verification of the influence of ink and surface parameters on droplet spreading Advanced Powder Technology 22 2011 ), S. 266-270 ISSN: 0921-8831 10.1016/j.apt.2011.02.003 Walther S. , Polster S. , Jank MPM. , Thiem H. , Ryssel H. , Frey L. :Tuning of charge carrier density of ZnO nanoparticle films by oxygen plasma treatment Advanced Powder Technology 22 2011 ), S. 253-256 ISSN: 0921-8831 10.1016/j.apt.2011.01.012 Walther S. , Polster S. , Meyer B. , Jank MPM. , Ryssel H. , Frey L. :Properties of SiO2 and Si3 N4 as gate dielectrics for printed ZnO transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics 29 2011 )ISSN: 2166-2754 10.1116/1.3524291 Weis S. , Körmer R. , Jank M. , Lemberger M. , Otto M. , Ryssel H. , Peukert W. , Frey L. :Conduction Mechanisms and Environmental Sensitivity of Solution-Processed Silicon Nanoparticle Layers for Thin-Film Transistors Small 7 2011 ), S. 2853-2857 ISSN: 1613-6829 10.1002/smll.201100703 Yanev V. , Rommel M. , Bauer AJ. , Frey L. :Characterization of thickness variations of thin dielectric layers at the nanoscale using scanning capacitance microscopy Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 29 2011 )ISSN: 0734-211X 10.1116/1.3532822 vom Dorp J. , Berberich SE. , Erlbacher T. , Bauer A. , Ryssel H. , Frey L. :Monolithic RC-snubber for power electronic applications 2011 IEEE 9th International Conference on Power Electronics and Drive Systems, PEDS 2011 (Singapore 10.1109/PEDS.2011.6147217 vom Dorp J. , Erlbacher T. , Bauer AJ. , Ryssel H. , Frey L. :Dielectric layers suitable for high voltage integrated trench capacitors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics 29 2011 )ISSN: 2166-2754 10.1116/1.3525283 2010 Baer E. , Kunder D. , Evanschitzky P. , Lorenz J. :Coupling of Equipment and Feature-Scale Profile Simulation for Dry-Etching of Polysilicon Gate Lines Workshop (Bologna In: Proceedings of SISPAD 2010 2010 Bauer A. , Friedrichs P. , Krieger M. , Pensl G. , Rupp R. , Seyller T. (Hrsg.):Silicon Carbide and Related Materials 2009 - Parts 1 and 2 Stafa-Zuerich 2010 ISBN: 0-87849-279-8 Egelkraut S. , März M. , Rauch M. , Schletz A. , Frey L. :A Highly Integrated EMI Filter Using Polymer Bonded Soft Magnetics as Core Material IEEE Applied Power Electronics Conference (APEC) (Palm Springs Erdmann A. , Fühner T. , Evanschitzky P. :Mask diffraction analysis and optimization for EUV masks 10.1117/12.814119 Erlbacher T. , Bauer AJ. , Frey L. :Reduced on resistance in LDMOS devices by integrating trench gates into planar technology IEEE Electron Device Letters 31 2010 ), S. 464-466 ISSN: 0741-3106 10.1109/LED.2010.2043049 Fet A. , Haeublein V. , Bauer AJ. , Ryssel H. , Frey L. :Effective work function tuning in high-κ dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping Applied Physics Letters 96 2010 ), Art.Nr.: 053506 ISSN: 0003-6951 10.1063/1.3303976 Fet A. , Haeublein V. , Bauer AJ. , Ryssel H. , Frey L. :Modeling of the effective work function instability in metal/high-κ dielectric stacks Journal of Applied Physics 107 2010 ), Art.Nr.: 124514 ISSN: 0021-8979 10.1063/1.3391280 Hinz J. , Bauer AJ. , Frey L. :Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application Semiconductor Science and Technology 25 2010 )ISSN: 0268-1242 10.1088/0268-1242/25/7/075009 Hinz J. , Bauer AJ. , Thiede T. , Fischer RA. , Frey L. :Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks Semiconductor Science and Technology 25 2010 ), Art.Nr.: 045009 ISSN: 0268-1242 10.1088/0268-1242/25/4/045009 Jahn J. , Erdmann A. , Fühner T. , Liu S. , Shao F. , Barenbaum A. :Topography-aware BARC optimization for double patterning SPIE Advanced Lithography (San Jose 23. Februar 2010 - 25. Februar 2010 )In: Proceedings of the SPIE 2010 10.1117/12.846441 Jambreck JD. , Schmitt H. , Amon B. , Rommel M. , Bauer AJ. , Frey L. :Fabrication of metallic SPM tips by combining UV nanoimprint lithography and focused ion beam processing Microelectronic Engineering 87 2010 ), S. 1123-1126 ISSN: 0167-9317 10.1016/j.mee.2009.11.040 Kaiser RJ. , Koffel S. , Pichler P. , Bauer AJ. , Amon B. , Claverie A. , Benassayag G. , Scheiblin P. , Frey L. , Ryssel H. :Honeycomb voids due to ion implantation in germanium Thin Solid Films 518 2010 ), S. 2323-2325 ISSN: 0040-6090 10.1016/j.tsf.2009.09.138 Körmer R. , Jank M. , Ryssel H. , Schmid HJ. , Peukert W. :Aerosol synthesis of silicon nanoparticles with narrow size distribution-Part 1: Experimental investigations Journal of Aerosol Science 41 2010 ), S. 998--1007 ISSN: 0021-8502 10.1016/j.jaerosci.2010.05.007 Laven J. , Job R. , Schulze HJ. , Niedernostheide FJ. , Häublein V. , Schulze H. , Schustereder W. , Ryssel H. , Frey L. :The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in Float Zone Silicon ECS Transactions 33 2010 ), S. 51-62 ISSN: 1938-5862 10.1149/1.3485682 Le-Huu M. , Schrey F. , Grieb M. , Schmitt H. , Haeublein V. , Bauer A. , Ryssel H. , Frey L. :NMOS logic circuits using 4H-SiC MOSFETs for high temperature applications Trans Tech Publications Ltd 2010 ISBN: 9780878492794 10.4028/www.scientific.net/MSF.645-648.1143 Lorentz VR. , Berberich SEB. , März M. , Bauer AJ. , Ryssel H. , Poure P. , Braun F. :Light-load efficiency increase in high-frequency integrated DC-DC converters by parallel dynamic width controlling Analog Integrated Circuits and Signal Processing 62 2010 ), S. 1-8 ISSN: 0925-1030 10.1007/s10470-009-9323-9 Pichler P. , Burenkov A. , Lorenz J. , Kampen C. , Frey L. :Future challenges in CMOS process modeling Thin Solid Films 518 2010 ), S. 2478-2484 ISSN: 0040-6090 10.1016/j.tsf.2009.09.150 Rommel M. , Jambreck JD. , Ebm C. , Platzgummer E. , Bauer AJ. , Frey L. :Influence of FIB patterning strategies on the shape of 3D structures: Comparison of experiments with simulations Microelectronic Engineering 87 2010 ), S. 1566-1568 ISSN: 0167-9317 10.1016/j.mee.2009.10.054 Rommel M. , Spoldi G. , Yanev V. , Beuer S. , Amon B. , Jambreck J. , Petersen S. , Bauer AJ. , Frey L. :Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 28 2010 ), S. 595-607 ISSN: 0734-211X 10.1116/1.3431085 Schmitt H. , Rommel M. , Bauer A. , Frey L. , Bich A. , Eisner M. , Voelkel R. , Hornung M. :Full wafer microlens replication by UV imprint lithography Microelectronic Engineering 87 2010 ), S. 1074--1076 ISSN: 0167-9317 10.1016/j.mee.2009.11.069 Walther S. , Schäfer S. , Jank MPM. , Thiem H. , Peukert W. , Frey L. , Ryssel H. :Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles Microelectronic Engineering 87 2010 ), S. 2312-2316 ISSN: 0167-9317 10.1016/j.mee.2010.03.009 2009 Egelkraut S. , Rauch M. , Schletz A. , Gardocki A. , März M. , Ryssel H. :Polymer bonded soft magnetics for EMI filter applications 3rd Int. Conference on Automotive Power Electronics (APE) (Paris 25. März 2009 - 26. März 2009 )Erdmann A. , Fuhrmann J. , Fiebach A. , Uhle M. , Szmanda C. , Truong C. :A model of self-limiting residual acid diffusion for pattern doubling Microelectronic Engineering 86 2009 ), S. 792 ISSN: 0167-9317 10.1016/j.mee.2008.10.023 Erdmann A. , Pflaum C. , Rahimi Z. :Finite integration (FI) method for modeling optical wavers in lithography masks 7th International Fraunhofer IISB Lithography Simulation Workshop (Hersbruck In: 7th International Fraunhofer IISB Lithography Simulation Workshop 2009 Fet A. , Haeublein V. , Bauer AJ. , Ryssel H. , Frey L. :Lanthanum implantation for threshold voltage control in metal/high-k devices Microelectronic Engineering 86 2009 ), S. 1782-1785 ISSN: 0167-9317 10.1016/j.mee.2009.03.042 Motzek K. , Bich A. , Erdmann A. , Hornung M. , Hennemeyer M. , Meliorisz PB. , Hofmann U. , Ünal N. , Voelkel R. , Partel S. , Hudek P. :Optimization of illumination pupils and mask features for proximity printing Micro- and Nano-Engineering (Ghent, Belgium In: Micro- and Nano-Engineering 2009 10.1016/j.mee.2009.10.038 Mueller J. , Boescke TS. , Schroeder U. , Reinicke M. , Oberbeck L. , Zhou D. , Weinreich W. , Kuecher P. , Lemberger M. , Frey L. :Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition Microelectronic Engineering 86 2009 ), S. 1818-1821 ISSN: 0167-9317 10.1016/j.mee.2009.03.076 Patsis GP. , Drygiannakis D. , Raptis T. , Gogoliddes E. , Erdmann A. :Advanced lithography models for strict process control in the 32nm technology node Microelectronic Engineering 86 2009 ), S. 513 ISSN: 0167-9317 10.1016/j.mee.2009.01.050 Reibold D. , Shao F. , Erdmann A. , Peschel U. :Extraordinary low transmission effects for ultra-thin patterned metal films Optics Express 17 2009 ), S. 544 ISSN: 1094-4087 10.1364/OE.17.000544 Shao F. , Evanschitzky P. , Fühner T. , Erdmann A. :Efficient Analysis of Three Dimensional EUV Mask Induced Imageing Artifacts Using the Waveguide Decomposition Method BACUS (Monterey In: BACUS 2009 10.1117/12.833464 Shao F. , Evanschitzky P. , Fühner T. , Erdmann A. :Rigorous diffraction simulations of topographic wafer stacks in double patterning Microelectronic Engineering 86 2009 ), S. 289 ISSN: 0167-9317 10.1016/j.mee.2008.11.078 Straue N. , Rauscher M. , Walther S. , Faber H. , Roosen A. :Preparation and soft lithographic printing of nano-sized ITO-dispersions for the manufacture of electrodes for TFTs Journal of Materials Science 44 2009 ), S. 6011 - 6019 ISSN: 0022-2461 10.1007/s10853-009-3804-1 http://link.springer.com/article/10.1007%2Fs10853-009-3804-1 Yanev V. , Erlbacher T. , Rommel M. , Bauer AJ. , Frey L. :Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale Microelectronic Engineering 86 2009 ), S. 1911-1914 ISSN: 0167-9317 10.1016/j.mee.2009.03.094 2008 Egelkraut S. , März M. , Ryssel H. :Polymer bonded soft magnetic particles for planar inductive devices 5th International Conference on Integrated Power Systems (CIPS) (Nürnberg https://ieeexplore.ieee.org/document/5755689?arnumber=5755689 Erlbacher T. , Jank MPM. , Ryssel H. , Frey L. , Engl R. , Walter A. , Sezi R. , Dehm C. :Self-aligned growth of organometallic layers for nonvolatile memories: Comparison of liquid-phase and vapor-phase deposition Journal of The Electrochemical Society 155 2008 ), S. H693-H697 ISSN: 0013-4651 10.1149/1.2957907 Martinez Limia A. , Pichler P. , Steen C. , Paul S. , Lerch W. :Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation Gettering and Defect Engineering in Semiconductor Technology XII (Italien 14. Oktober 2007 - 19. Oktober 2007 )In: Gettering and Defect Engineering in Semiconductor Technology XII 2008 10.4028/www.scientific.net/SSP.131-133.277 Pei L. , Duscher G. , Steen C. , Pichler P. , Ryssel H. , Napolitani E. , De Salvador D. , Piro AM. , Terrasi AT. , Severac F. , Cristiano F. , Ravichandran K. , Gupta N. , Windl W. :Detailed arsenic concentration profiles at Si/SiO2 interfaces Journal of Applied Physics 104 2008 ), Art.Nr.: 043507 ISSN: 0021-8979 10.1063/1.2967713 Rommel M. , Bauer A. , Ryssel H. :Detailed Carrier Lifetime Analysis of Iron-Contaminated Boron-doped Silicon by Comparison of Simulation and Measurement Journal of The Electrochemical Society 155 2008 ), S. H117 ISSN: 0013-4651 10.1149/1.2819628 2007 Christoph D. , Fühner T. , Tollkühn B. , Erdmann A. , Kókai G. :Application of a memetic algorithm to the calibration of micro-lithography In: Grosan, Crina; Abraham, Ajith (Hrsg.): Hybrid Evolutionary Algorithms Berlin Heidelberg Springer 2007 , S. 201-239 ISBN: 978-3-540-73296-9 10.1007/978-3-540-73297-6 Krieger M. , Semmelroth K. , Weber HB. , Pensl G. , Rambach M. , Frey L. :Impurity Conduction in Silicon Carbide Materials Science Forum 556-557 2007 ), S. 364 ISSN: 0255-5476 Lemberger M. , Schön F. , Dirnecker T. , Jank M. , Frey L. , Ryssel H. , Paskaleva A. , Zürcher S. , Bauer A. :MOCVD of Hafnium Silicate Films Obtained from a Single-Source Precusor on Silicon and Germanium for Gate-Dielectric Applications Chemical Vapor Deposition 13 2007 ), S. 105-111 ISSN: 0948-1907 10.1002/cvde.200606511 Schmitt H. , Frey L. , Ryssel H. , Rommel M. , Lehrer C. :UV nanoimprint materials: Surface energies, residual layers, and imprint quality Journal of Vacuum Science & Technology B 25 2007 ), S. 785-790 ISSN: 1071-1023 10.1116/1.2732742 Wellmann P. , Karl U. , Kleber S. , Schmitt H. :Cathodoluminescence characterization of organic semiconductor materials for light emitting device applications Journal of Applied Physics 101 2007 )ISSN: 0021-8979 10.1063/1.2743090 2006 S.E. Berberich, M. Marz, A.J. Bauer, S.K. Beuer, H. Ryssel:Active Fuse 2006 IEEE International Symposium on Power Semiconductor Devices and IC's (Naples 4. Juni 2006 - 8. Juni 2006 )In: Symposium on Power Semiconductor Devices and IC's 2006 10.1109/ISPSD.2006.1666088 Dirnecker T. , Ryssel H. :Untersuchung von Aufladungseffekten bei der Ionenimplantation Aachen Shaker Verlag 2006 ISBN: 3-8322-5081-6 Ghicov A. , Macák J. , Tsuchiya H. , Kunze J. , Häublein V. , Frey L. , Schmuki P. :Ion implantation and annealing for an efficient N-doping of TiO2 nanotubes Nano Letters 6 2006 ), S. 1080-1082 ISSN: 1530-6984 10.1021/nl0600979 Häublein V. , Frey L. , Ryssel H. :The impact of mass resolution on molybdenum contamination for B, P, BF 2, and As implantations ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology, IIT 2006 (Marseille https://www.scopus.com/record/display.uri?eid=2-s2.0-33846941211&origin=inward Jank M. , Kandziora C. , Frey L. , Ryssel H. :Well Design in a Bulk CMOS Technology with Low Mask Count 2006 16th International Conference on Ion Implantation Technology (Marseille 11. Juni 2006 - 16. November 2006 )In: AIP Conference Proceedings Volume 866, Issue 1 2006 10.1063/1.2401476 Lugstein A. , Frey L. , Bertagnolli E. , Platzgummer E. , Biedermann A. , Langfischer H. , Eder-Kapl S. , Kuemmel M. , Cernusca S. , Loeschner H. , Lehrer C. :Simulation of ion beam direct structuring for 3D nanoimprint template fabrication Microelectronic Engineering 83 2006 ), S. 936-939 ISSN: 0167-9317 10.1016/j.mee.2006.01.140 Oechsner R. , Pfeffer M. , Pfitzner L. , Ryssel H. , Beer K. , Boldin M. , de Mey B. , Engelhard M. , O'Murchu C. , Ditmar J. , Colson P. , Madore M. , Krahn L. , Kempe W. , Luisman E. :Creation of E-Learning Content for Microelectronics Manufacturing 12th IFAC Symposium on Information Control Problems in Manufacturing (Saint-Etienne, France 17. Mai 2006 - 19. Mai 2006 )In: Proceeding of the 12th IFAC Symposium on Information Control Problems in Manufacturing 2006 Peto G. , Khanh N. , Horvath Z. , Molnar G. , Gyulai J. , Kotai E. , Guczi L. , Frey L. :Nanoscale morphology and photoemission of arsenic implanted germanium films Journal of Applied Physics 99 2006 )ISSN: 0021-8979 10.1063/1.2190717 Rambach M. , Frey L. , Bauer A. , Ryssel H. :Extracting activation and compensation ratio from aluminum implanted 4H-SiC by modeling of resistivity measurements 2006 ISBN: 9780878494255 https://www.scopus.com/record/display.uri?eid=2-s2.0-37849042244&origin=inward 2005 Bauer A. , Paskaleva A. , Lemberger M. , Frey L. , Ryssel H. :Thin HfxTiySixO films with varying Hf to Ti contents as candidates for high-k dielectrics 207th ECS Meeting (Quebec https://www.scopus.com/record/display.uri?eid=2-s2.0-31844445401&origin=inward Berberich SE. , Bauer A. , Frey L. , Ryssel H. :Triple trench gate IGBTs 17th International Symposium on Power Semiconductor Devices and ICs, ISPSD'05 (Sanata Barbara, CA https://www.scopus.com/record/display.uri?eid=2-s2.0-27744589892&origin=inward Döhler G. , Renner F. , Klar O. , Eckardt M. , Schwanhäußer A. , Malzer S. , Driscoll D. , Hanson M. , Gossard A. , Loata g. , Löffler T. , Roskos H. :THz-photomixer based on quasi-ballistic transport Semiconductor Science and Technology 20 2005 )ISSN: 0268-1242 10.1088/0268-1242/20/7/007 Frey L. , Bauer A. , Ryssel H. :Chemical vapor phase precipitation of new materials for sub 50 nm transistors Chemische Dampfphasenabscheidung von neuen Materialien für Sub-50-nm-Transistoren Chemie Ingenieur Technik 77 2005 ), S. 1215-1216 ISSN: 0009-286X 10.1002/cite.200590331 Haeublein V. , Sadrawetz S. , Frey L. , Martinz HP. , Ryssel H. :Investigations into the wear of a WL10 ion source Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237 2005 ), S. 341-345 ISSN: 0168-583X 10.1016/j.nimb.2005.05.011 Häublein V. , Frey L. , Ryssel H. :Additional peaks in mass spectra due to charge exchange events and dissociation of molecular ions during extraction Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237 2005 ), S. 346-350 ISSN: 0168-583X 10.1016/j.nimb.2005.05.012 Lemberger M. , Paskaleva A. , Zürcher S. , Bauer A. , Frey L. , Ryssel H. :Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor Microelectronics Reliability 45 2005 ), S. 819-822 ISSN: 0026-2714 10.1016/j.microrel.2004.11.040 Lemberger M. , Schön F. , Dirnecker T. , Jank M. , Paskaleva A. , Bauer A. , Frey L. , Ryssel H. :High-k Hafnium Silicate Films on Silicon and Germanium Wafers by MOCVD Using a Single-Source Precursor In: Proceedings of the 15th European Conference on Chemical Vapor Deposition (EUROCVD-15), Electrochemical Society - The Electrochemical Society, Inc. 2005 , S. 873 Müller R. , Künecke U. , Weingärtner R. , Schmitt H. , Desperrier P. , Wellmann P. :High Al-doping of SiC using a modified PVT (M-PVT) growth set-up Materials Science Forum 483 2005 ), S. 31-34 ISSN: 0255-5476 10.4028/www.scientific.net/MSF.483-485.31 Rambach M. , Bauer A. , Frey L. , Friedrichs P. , Ryssel H. :Annealing of Aluminium Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing Materials Science Forum 483-485 2005 ), S. 483 ISSN: 0255-5476 Rambach M. , Schmid F. , Krieger M. , Frey L. , Bauer A. , Pensl G. , Ryssel H. :Implantation and Annealing of Aluminum in 4H Silicon Carbide Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237 2005 ), S. 68-71 ISSN: 0168-583X 10.1016/j.nimb.2005.04.079 Rommel M. , Groß M. , Ettinger A. , Lemberger M. , Bauer A. , Frey L. , Ryssel H. :Characterization of interface state densitiesby photocurrent analysis: Comparison of results for different insulator layers Microelectronic Engineering 80 2005 ), S. 50-53 ISSN: 0167-9317 10.1016/j.mee.2005.04.042 Rommel M. , Groß M. , Frey L. , Bauer A. , Ryssel H. :Wafer scale characterization of interface state densities without test structures by photocurrent analysis 35th European Solid State Device Research Conference (Grenoble https://www.scopus.com/record/display.uri?eid=2-s2.0-31744443828&origin=inward Ryssel H. , Ullrich M. , Burenkov A. :Ion Sputtering at Grazing Incidence for SIMS-Analysis Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 228 2005 ), S. 373-377 ISSN: 0168-583X 10.1016/j.nimb.2004.10.073 Schmitt H. , Müller R. , Maier M. , Winnacker A. , Wellmann P. :Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals Materials Science Forum 483 2005 ), S. 445-448 ISSN: 0255-5476 10.4028/www.scientific.net/MSF.483-485.445 2004 Frey L. , Rambach M. , Weiss R. , Bauer A. , Ryssel H. :Investigation of rapid thermal annealed pn-junctions in SiC 2004 https://www.scopus.com/record/display.uri?eid=2-s2.0-8744264042&origin=inward Fühner T. , Erdmann A. , Farkas R. , Tollkühn B. , Kókai G. :Genetic Algorithms to Improve Mask and Illumination Geometries in Lithographic Imaging Systems 1st European Workshop on Hardware Optimisation (EVOHOT2004) (Coimbra 3. April 2004 - 5. April 2004 )In: Günther R. Raidl, Stefano Cagnoni, Jürgen Branke, David Wolfe Corne, Rolf Drechsler, Yaochu Jin, Colin G. Johnson, Penousal Machado, Elena Marchiori, Franz Rothlauf, George D. Smith, Giovanni Squillero (Hrsg.): Applications of Evolutionary Computing - EvoWorkshops 2004: EvoBIO, EvoCOMNET, EvoHOT, EvoISAP, EvoMUSART, and EvoSTOC , Berlin Heidelberg 2004 10.1007/978-3-540-24653-4_22 Lehrer C. , Frey L. , Petersen S. , Ryssel H. , Schäfer M. , Sulzbach T. :Integration of field emitters into scanning probe microscopy sensors using focused ion and electron beams Journal of Vacuum Science & Technology B 22 2004 ), S. 1402-1406 ISSN: 1071-1023 https://www.scopus.com/record/display.uri?eid=2-s2.0-3242722353∨igin=inward Lemberger M. , Paskaleva A. , Zürcher S. , Bauer A. , Frey L. , Ryssel H. :Electrical characterization and reliability aspects of zirconium silicate films obtained from novel MOCVD precursors Microelectronic Engineering 72 2004 ), S. 315-320 ISSN: 0167-9317 10.1016/j.mee.2004.01.010 Nguyen PH. , Lorenz J. , Baer E. , Ryssel H. :Modeling of Chemical-Mechanical Polishing on Patterned Wafers as Part of Integrated Topography Process Simulation MAM2004 (Leuven, Belgium 7. März 2004 - 10. März 2004 )In: Microelectronic Engineering 2004 10.1016/j.mee.2004.07.018 http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6V0W-4D1V29P-2-C&_cdi=5657&_user=746735&_orig=browse&_coverDate=10/01/2004&_sk=999239998&view=c&wchp=dGLbVlb-zSkzk&md5=4039dffb5d8e4b57dba393cf896acaef&ie=/sdarticle.pdf Paskaleva A. , Bauer A. , Lemberger M. , Zürcher S. :Physical and Electrical Properties of Thin High-k HfxTiySizO Film With varying Hf to Ti Ratios 10.1063/1.1702101 Schmidt C. , Petrik P. , Schneider C. , Fried M. , Löhner T. , Bársony I. , Gyulai J. , Ryssel H. :Optical Characterization of Ferroelectric Strontium-Bismut-Tantalate (SBT) Thin Films Thin Solid Films 455-456 2004 ), S. 495-499 ISSN: 0040-6090 10.1016/j.tsf.2003.11.248 Weiss R. , Frey L. , Ryssel H. :Modeling of the influence of Schottky barrier inhomogeneities on SiC diode characteristics 2004 https://www.scopus.com/record/display.uri?eid=2-s2.0-8644276383&origin=inward Yasenov NN. , Berberich SE. , Frey L. , Ryssel H. :Design, fabrication and characterization of a microactuator for nebulization of fluids 2003 Bauer A. , Rambach M. , Frey L. , Weiss R. , Rupp R. , Friedrichs P. , Schörner R. , Peters DP. :Surface Properties and Electrical Characteristics of Rapid Thermal Annealed 4H-SiC 2003 https://www.scopus.com/record/display.uri?eid=2-s2.0-18744421066&origin=inward Berberich SE. , Bauer A. , Frey L. , Ryssel H. :Trench sidewall doping for lateral power devices 33rd European Solid-State Device Research Conference, ESSDERC 2003 10.1109/ESSDERC.2003.1256893 Dirnecker T. , Frey L. , Bauer A. , Ryssel H. , Ruf A. , Henke D. , Beyer A. :Influence of Antenna Shape and Resist Patterns on Charging Damage During Ion Implantation Ion Implantation Technology (Taos, New Mexico, USA In: IEEE Proc. on Ion Implantation Technology-2002 , Piscataway 2003 10.1109/IIT.2002.1257996 Erdmann A. , Farkas R. , Fühner T. , Tollkühn B. , Kókai G. :Mask and Source Optimization for Lithographic Imaging Systems Wave-Optical Systems Engineering II (San Diego, CA 31. Dezember 2003 - 31. Dezember 2003 )In: Wyrowski, F. (Hrsg.): Wave-Optical Systems Engineering II, SPIE 5182 2003 10.1117/12.504732 http://www2.informatik.uni-erlangen.de/publication/download/spie5182_12.ps.gz Farkas R. , Kókai G. , Erdmann A. , Fühner T. , Tollkühn B. :Optimization of one-and two dimensional masks in the optical lithography Treffen der Fachgruppe Maschinelles Lernen, Wissensentdeckung, Data Mining der Gesellschaft für Informatik (FGML 2003) (Karlsruhe 6. Oktober 2003 - 8. Oktober 2003 )In: Treffen der Fachgruppe Maschinelles Lernen, Wissensentdeckung, Data Mining der Gesellschaft für Informatik (FGML 2003) 2003 http://www2.informatik.uni-erlangen.de/publication/download/fgml03.ps.gz Frey L. , Lehrer C. :Materials processing by focused ion beams for TEM sample preparation and nanostructuring Materialbearbeitung mittels fokussierter ionenstrahlen zur TEM-probenpräparation und nanostrukturierung Praktische Metallographie 40 2003 ), S. 184-192 ISSN: 0032-678X https://www.scopus.com/record/display.uri?eid=2-s2.0-0038681908∨igin=inward Frey L. , Lehrer C. , Ryssel H. :Nanoscale effects in focused ion beam processing Applied Physics A-Materials Science & Processing 76 2003 ), S. 1017-1023 ISSN: 0947-8396 10.1007/s00339-002-1943-1 Henke D. , Walther S. , Weemann J. , Dirnecker T. , Ruf A. , Beyer A. , Lee K. :Characterization of charging damage in plasma doping Ion Implantation Technology (Taos, New Mexico, USA In: IEEE Proc. on Ion Implantation TEchnology-2002 , Piscataway 2003 10.1109/IIT.2002.1257973 Paskaleva A. , Lemberger M. , Zürcher S. , Bauer A. , Frey L. , Ryssel H. :Electrical Characterization of Zirconium Silicate Films Obtained from Novel MOCVD Precursors WoDiM 2002 (Grenoble, France In: Proceedings of the 12th Workshop on Dielectrics in Microelectronics (WoDiM 2002) , Grenoble, France 2003 10.1016/S0026-2714(03)00180-X Tollkühn B. , Fühner T. , Matiut D. , Erdmann A. , Semmler A. , Küchler B. , Kókai G. :Will Darwins's Law Help Us to Improve Our Resist Models? Advances in Resist Technology and Processing, SPIE 5039 (Santa Clara, CA 23. Februar 2003 - 23. Februar 2003 )In: Theodore H. Fedynyshyn (Hrsg.): Advances in Resist Technology and Processing XX 2003 10.1117/12.485078 http://www2.informatik.uni-erlangen.de/publication/download/spie5039-33.pdf 2002 Beyer A. , Hausmann A. , Junack M. , Radecker J. , Ruf A. , Dirnecker T. :Plasma induced damage monitoring for HDP processes 7th Int. Symp. On Plasma & Process Induced Damage (Maui, Hawaii, USA In: Proc. 7th Int. Symp. On Plasma & Process Induced Damage , Santa Clara, USA 2002 10.1109/PPID.2002.1042615 Boubekeur H. , Mikolajick T. , Bauer A. , Frey L. , Ryssel H. :Effect of barium contamination on gate oxide integrity in high-k dram Journal of Non-Crystalline Solids 303 2002 ), S. 12-16 ISSN: 0022-3093 10.1016/S0022-3093(02)00957-2 Boubekeur H. , Mikolajick T. , Pamler W. , Höpfner J. , Frey L. , Ryssel H. :Platinum contamination issues in ferroelectric memories Journal of Applied Physics 92 2002 ), S. 3257-3265 ISSN: 0021-8979 10.1063/1.1500414 Dirnecker T. , Ruf A. , Frey L. , Beyer A. , Bauer A. , Henke D. , Ryssel H. :Influence of photoresist pattern on charging damage during high current ion implantation 7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002 10.1109/PPID.2002.1042620 Frey L. , Ryssel H. (Hrsg.):Erlanger Berichte Mikroelektronik Aachen 2002 ISBN: 3-8322-0960-3 Fujita M. , Tajima J. , Nakagawa T. , Abo S. , Kinomura A. , Pászti F. , Takai M. , Schork R. , Frey L. , Ryssel H. :Development of enhanced depth-resolution technique for shallow dopant profiles Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 190 2002 ), S. 26-33 ISSN: 0168-583X 10.1016/S0168-583X(01)01248-4 Häublein V. , Frey L. , Ryssel H. :ENCOTION - A new simulation tool for energetic contamination analysis 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 10.1109/IIT.2002.1257977 Häublein V. , Frey L. , Ryssel H. , Walser H. :Investigation of lanthanum contamination from a lanthanated tungsten ion source 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 10.1109/IIT.2002.1258011 Jank M. , Frey L. , Bauer A. , Ryssel H. :Investigation of implantation-induced defects in thin gate oxides using low field tunnel currents 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 10.1109/IIT.2002.1257972 Leistner T. , Lehmbacher K. , Härter P. , Schmidt C. , Bauer A. , Frey L. , Ryssel H. :MOCVD of titanium dioxide on the basis of new precursors Journal of Non-Crystalline Solids 303 2002 ), S. 64-68 ISSN: 0022-3093 10.1016/S0022-3093(02)00965-1 Weiss R. , Frey L. , Ryssel H. :Different ion implanted edge terminations for Schottky diodes on SiC 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 10.1109/IIT.2002.1257958 2001 Boubekeur H. , Mikolajick T. , Höpfner J. , Dehm C. , Pamler W. , Steiner J. , Kilian G. , Kolbesen B. , Bauer A. , Frey L. , Ryssel H. :Barium, strontium and bismuth contamination in CMOS processes Trans Tech Publications Ltd 2001 ISBN: 9783908450573 10.4028/www.scientific.net/SSP.76-77.9 Boubekeur H. , Mikolajick T. , Nagel N. , Dehm C. , Pamler W. , Bauer A. , Frey L. , Ryssel H. :Impact of platinum contamination on ferroelectric memories 13th International Symposium on Integrated Ferroelectrics (Colorado Springs, CO 10.1080/10584580108015667 Dziomba T. , Danzebrink H. , Lehrer C. , Frey L. , Sulzbach T. , Ohlsson O. :High-resolution constant-height imaging with apertured silicon cantilever probes Journal of Microscopy 202 2001 ), S. 22-27 ISSN: 0022-2720 10.1046/j.1365-2818.2001.00858.x Jank MPM. , Lemberger M. , Bauer A. , Frey L. , Ryssel H. :Electrical reliability aspects of through the gate implanted MOS structures with thin oxides Microelectronics Reliability 41 2001 ), S. 987-990 ISSN: 0026-2714 10.1016/S0026-2714(01)00053-1 Lehrer C. , Frey L. , Petersen S. , Ryssel H. :Limitations of focused ion beam nanomachining Journal of Vacuum Science & Technology B 19 2001 ), S. 2533-2538 ISSN: 1071-1023 10.1116/1.1417553 Lehrer C. , Frey L. , Petersen S. , Sulzbach T. , Ohlsson O. , Dziomba T. , Danzebrink H. , Ryssel H. :Fabrication of silicon aperture probes for scanning near-field optical microscopy by focused ion beam nano machining Microelectronic Engineering 2001 ), S. 721-728 ISSN: 0167-9317 10.1016/S0167-9317(01)00463-4 Schür C. , Marek T. , Strunk HP. , Tautz S. , Steen C. , Kiesel P. , Malzer S. , Döhler G. , Niecke M. , Schröder F. , Mayer R. , Knappe R. :Substrate misorientation as additional parameter for low temperature growth of GaAs Physik mikrostrukturierter Halbleiter 23 2001 ), S. 145-150 ISSN: 1434-2073 Weiss R. , Frey L. , Ryssel H. :Tungsten, nickel, and molybdenum Schottky diodes with different edge termination Applied Surface Science 184 2001 ), S. 413-418 ISSN: 0169-4332 10.1016/S0169-4332(01)00527-X 2000 Boubekeur H. , Höpfner J. , Mikolajick T. , Dehm C. , Frey L. , Ryssel H. :Aspects of barium contamination in high dielectric dynamic random access memories Journal of The Electrochemical Society 147 2000 ), S. 4297-4300 ISSN: 0013-4651 10.1149/1.1394057 Funk K. , Häublein V. , Chakor H. , Ameen M. , Frey L. , Ryssel H. , Ramirez A. :Investigation of molybdenum contamination in 11B+ and 31P+ implants 2000 13th International Conference on Ion Implantation Technology, IIT 2000 (Alpbach 10.1109/.2000.924252 Jank M. , Lemberger M. , Frey L. , Ryssel H. :Gate oxide damage due to through the gate implantation in MOS-structures with ultrathin and standard oxides 2000 13th International Conference on Ion Implantation Technology, IIT 2000 (Alpbach 10.1109/IIT.2000.924101 Kröner F. , Schork R. , Frey L. , Burenkov A. , Ryssel H. :Phosphorus Ion Shower Implantation for special power IC applications 2000 13th International Conference on Ion Implantation Technology, IIT 2000 (Alpbach 10.1109/.2000.924191 Lehrer C. , Frey L. , Petersen S. , Mizutam M. , Takai M. , Ryssel H. :Defects and gallium - Contamination during focused ion beam micro machining 2000 13th International Conference on Ion Implantation Technology, IIT 2000 (Alpbach 10.1109/.2000.924248 Tajima J. , Park Y. , Fujita M. , Takai M. , Schork R. , Frey L. , Ryssel H. :Enhanced depth-resolution analysis with medium energy ion scattering (meis) for shallow junction profiling 2000 13th International Conference on Ion Implantation Technology, IIT 2000 (Alpbach 10.1109/.2000.924225 Weiland R. , Boit C. , Dawes N. , Dzieslaty A. , Demm E. , Ebersberger B. , Frey L. , Geyer S. , Hirsch A. , Lehrer C. , Meis P. , Kamolz M. , Lezec H. , Rettenmaier H. , Tlttes W. , Trefchler R. , Zimmermann H. :Wafer Conserving Full Range Construction Analysis for IC Fabrication and Process Development Based on FIB /Dual Beam Inline Application Proceedings of the 26th International Symposium for Testing and Failure Analysis (Bellevue, WA In: Proceedings of the 26th International Symposium for Testing and Failure Analysis 2000 https://www.scopus.com/record/display.uri?eid=2-s2.0-10744227841∨igin=inward Yavas O. , Ochiai C. , Takai M. , Park Y. , Lehrer C. , Lipp S. , Frey L. , Ryssel H. , Hosono A. , Okuda S. :Field emitter array fabricated using focused ion and electron beam induced reaction Journal of Vacuum Science & Technology B 18 2000 ), S. 976-979 ISSN: 1071-1023 10.1116/1.591310 1999 Bauer A. , Mayer P. , Frey L. , Haeublein V. , Ryssel H. :Forming nitrided gate oxides by nitrogen implantation into the substrate before gate oxidation by RTO Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) (Kyoto, Jpn In: Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) , Piscataway, NJ, United States 1999 https://www.scopus.com/record/display.uri?eid=2-s2.0-0033338246&origin=inward Bauer A. , Mayer P. , Frey L. , Haeublein V. , Ryssel H. :Implantation of nitrogen into polysilicon to suppress boron penetration through the gate oxide Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) (Kyoto, Jpn In: Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) , Piscataway, NJ, United States 1999 https://www.scopus.com/record/display.uri?eid=2-s2.0-0033322718&origin=inward Biró L. , Márk G. , Gyulai J. , Havancsák K. , Lipp S. , Lehrer C. , Frey L. , Ryssel H. :AFM and STM investigation of carbon nanotubes produced by high energy ion irradiation of graphite Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 147 1999 ), S. 142-147 ISSN: 0168-583X 10.1016/S0168-583X(98)00565-5 Biró L. , Márk G. , Gyulai J. , Rozlosnik N. , Kürti J. , Szabó B. , Frey L. , Ryssel H. :Scanning probe method investigation of carbon nanotubes produced by high energy ion irradiation of graphite Carbon 37 1999 ), S. 739-744 ISSN: 0008-6223 10.1016/S0008-6223(98)00264-4 Biró L. , Szabó B. , Márk G. , Gyulai J. , Havancsák K. , Kürti J. , Dunlop A. , Frey L. , Ryssel H. :Carbon nanotubes produced by high energy (E > 100 MeV), heavy ion irradiation of graphite Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 148 1999 ), S. 1102-1105 ISSN: 0168-583X 10.1016/S0168-583X(98)00738-1 Danzebrink H. , Dziomba T. , Sulzbach T. , Ohlsson O. , Lehrer C. , Frey L. :Nano-slit probes for near-field optical microscopy fabricated by focused ion beams Journal of Microscopy 194 1999 ), S. 335-339 ISSN: 0022-2720 10.1046/j.1365-2818.1999.00505.x Dziomba T. , Sulzbach T. , Ohlsson O. , Lehrer C. , Frey L. , Danzebrink H. :Ion beam-treated silicon probes operated in transmission and cross-polarized reflection mode near-infrared scanning near-field optical microscopy (NIR-SNOM) Surface and Interface Analysis 27 1999 ), S. 486-490 ISSN: 0142-2421 https://www.scopus.com/record/display.uri?eid=2-s2.0-0032643999&origin=inward Park Y. , Nagai T. , Takai M. , Lehrer C. , Frey L. , Ryssel H. :Comparison of beam-induced deposition using ion microprobe Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 148 1999 ), S. 25-31 ISSN: 0168-583X https://www.scopus.com/record/display.uri?eid=2-s2.0-0033513926&origin=inward Park Y. , Takai M. , Lehrer C. , Frey L. , Ryssel H. :Impurity incorporation during beam assisted processing analyzed using nuclear microprobe Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 158 1999 ), S. 487-492 ISSN: 0168-583X 10.1016/S0168-583X(99)00371-7 Park Y. , Takai M. , Lehrer C. , Frey L. , Ryssel H. :Investigation of Cu films by focused ion beam induced deposition using nuclear microprobe Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 158 1999 ), S. 493-498 ISSN: 0168-583X 10.1016/S0168-583X(99)00501-7 Schmidt C. , Lehnert W. , Leistner T. , Frey L. , Ryssel H. :MOCVD of ferroelectric thin films Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) (Barcelona, Spain In: Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) , Les Ulis Cedex A, France 1999 https://www.scopus.com/record/display.uri?eid=2-s2.0-0033188109&origin=inward 1998 Montandon C. , Bourenkov A. , Frey L. , Pichler P. , Biersack JP. :Distortion of sims profiles due to ion beam mixing: Shallow arsenic implants in silicon Radiation Effects and Defects in Solids 145 1998 ), S. 213-223 ISSN: 1042-0150 10.1080/10420159808225765 Park Y. , Takai M. , Lehrer C. , Frey L. , Ryssel H. :Microprobe analysis of Pt films deposited by beam induced reaction Japanese Journal of Applied Physics 37 1998 ), S. 7042-7046 ISSN: 0021-4922 https://www.scopus.com/record/display.uri?eid=2-s2.0-4243307043&origin=inward Park Y. , Takai M. , Nagai T. , Kishimoto T. , Seidl A. , Lehrer C. , Frey L. , Ryssel H. :Microanalysis of masklessly fabricated micro structures using nuclear microprobe Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1998 ), S. 373-378 ISSN: 0168-583X 10.1016/S0168-583X(97)00709-X 1997 Biró L. , Gyulai J. , Havancsák K. , Didyk A. , Bogen S. , Frey L. , Ryssel H. :New method based on atomic force microscopy for in-depth characterization of damage in Si irraadiate with 209 MeV Kr Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 122 1997 ), S. 559-562 ISSN: 0168-583X 10.1016/S0168-583X(96)00662-3 Biró L. , Gyulai J. , Havancsák K. , Didyk A. , Frey L. , Ryssel H. :In-depth damage distribution by scanning probe methods in targets irradiated with 200 MeV ions Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1997 ), S. 32-37 ISSN: 0168-583X 10.1016/S0168-583X(96)01106-8 Frey L. , Stoemenos J. , Schork R. , Nejim A. , Hemment P. :Synthesis of SiC by high temperature C+ implantation into SiO2: The role of Si/SiO2 interface Journal of The Electrochemical Society 144 1997 ), S. 4314-4320 ISSN: 0013-4651 10.1149/1.1838184 Park Y. , Takai M. , Nagai T. , Kishimoto T. , Lehrer C. , Frey L. , Ryssel H. :Microanalysis of impurity contamination in masklessly etched area using focused ion beam Japanese Journal of Applied Physics 36 1997 ), S. 7712-7716 ISSN: 0021-4922 https://www.scopus.com/record/display.uri?eid=2-s2.0-0031346547&origin=inward Saggio M. , Montandon C. , Bourenkov A. , Frey L. , Pichler P. :Distortion of sims profiles due to ion beam mixing Radiation Effects and Defects in Solids 141 1997 ), S. 37-52 ISSN: 1042-0150 10.1080/10420159708211555 Schwenke H. , Knoth J. , Fabry L. , Pahlke S. , Scholz R. , Frey L. :Measurement of shallow arsenic impurity profiles in semiconductor silicon using time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence spectrometry Journal of The Electrochemical Society 144 1997 ), S. 3979-3983 ISSN: 0013-4651 10.1149/1.1838122 1996 Bogen S. , Herden M. , Frey L. , Ryssel H. :Reduction of lateral parasitic current flow by buried recombination layers formed by high energy implantation of C or O into silicon Proceedings of the 1996 11th International Conference on Ion Implantation Technology (Austin, TX, USA In: Ishida E.; Mehta S.; Banerjee S.; Current M.; Smith T.C.; et al (Hrsg.): Proceedings of the 1996 11th International Conference on Ion Implantation Technology , Piscataway, NJ, United States 1996 https://www.scopus.com/record/display.uri?eid=2-s2.0-0030373286∨igin=inward Frey L. , Bogen S. , Herden M. , Ryssel H. :Deep implants for semiconductor device applications Radiation Effects and Defects in Solids 140 1996 ), S. 87-101 ISSN: 1042-0150 10.1080/10420159608212943 Jiao G. , Bogen S. , Frey L. , Ryssel H. :A multi-laminate wire mesh ionizer for a Cs sputter negative ion source Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 382 1996 ), S. 332-334 ISSN: 0168-9002 10.1016/S0168-9002(96)00701-2 Lipp S. , Frey L. , Lehrer C. , Demm E. , Pauthner S. , Ryssel H. :A comparison of focused ion beam and electron beam induced deposition processes Microelectronics Reliability 36 1996 ), S. 1779-1782 ISSN: 0026-2714 https://www.scopus.com/record/display.uri?eid=2-s2.0-0030274008∨igin=inward Lipp S. , Frey L. , Lehrer C. , Frank B. , Demm E. , Pauthner S. , Ryssel H. :Tetramethoxysilane as a precursor for focused ion beam and electron beam assisted insulator (SiOx) deposition Journal of Vacuum Science & Technology B 14 1996 ), S. 3920-3923 ISSN: 1071-1023 https://www.scopus.com/record/display.uri?eid=2-s2.0-0000353753∨igin=inward Lipp S. , Frey L. , Lehrer C. , Frank B. , Demm E. , Ryssel H. :Investigations on the topology of structures milled and etched by focused ion beams Journal of Vacuum Science & Technology B 14 1996 ), S. 3996-3999 ISSN: 1071-1023 https://www.scopus.com/record/display.uri?eid=2-s2.0-0001398692∨igin=inward 1995 Bogen S. , Körber K. , Gong L. , Frey L. , Ryssel H. :Comparison of retrograde and conventional p-wells in regard of latch-up susceptibility Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 96 1995 ), S. 411-415 ISSN: 0168-583X 10.1016/0168-583X(94)00530-3 Frey L. , Ryssel H. , Bogen S. , Hobler G. , Simionescu A. :Model for the electronic stopping of channeled ions in silicon around the stopping power maximum Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 106 1995 ), S. 47-50 ISSN: 0168-583X 10.1016/0168-583X(95)00676-1 Gong L. , Petersen S. , Frey L. , Ryssel H. :Improved delineation technique for two dimensional dopant profiling Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 96 1995 ), S. 133-138 ISSN: 0168-583X 10.1016/0168-583X(94)00472-2 Lipp S. , Frey L. , Franz G. , Demm E. , Petersen S. , Ryssel H. :Local material removal by focused ion beam milling and etching Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 106 1995 ), S. 630-635 ISSN: 0168-583X 10.1016/0168-583X(95)00778-4 1994 Biró L. , Gyulai J. , Bogen S. , Frey L. , Ryssel H. :Investigation of the effect of altered defect structure produced by photon assisted implantation on the diffusion of As in silicon during thermal annealing Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 85 1994 ), S. 925-928 ISSN: 0168-583X 10.1016/0168-583X(94)95952-8 Frey L. , Pichler P. , Kasko I. , Thies I. , Lipp S. , Streckfuss N. , Gong L. , Ryssel H. :Practical aspects of ion beam analysis of semiconductor structures Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 85 1994 ), S. 356-362 ISSN: 0168-583X 10.1016/0168-583X(94)95844-0 Gong L. , Bogen S. , Frey L. , Jung W. , Ryssel H. :Analytical description of high energy implantation profiles of boron and phosphorus into crystalline silicon Radiation Effects and Defects in Solids 127 1994 ), S. 385-395 ISSN: 1042-0150 10.1080/10420159408221046 Gyulai J. , Ryssel H. , Biró L. , Frey L. , Kuki A. , Kormány T. , Serfozo G. , Khanh N. :Athermal effects in ion implanted layers Radiation Effects and Defects in Solids 127 1994 ), S. 397-404 ISSN: 1042-0150 10.1080/10420159408221047 1993 Biró L. , Gyulai J. , Ryssel H. , Frey L. , Kormány T. , Tuan N. , Horváth z. :Photon assisted implantation (PAI) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1993 ), S. 607-611 ISSN: 0168-583X 10.1016/0168-583X(93)96191-E Bogen S. , Gong L. , Frey L. , Ryssel H. :High energy implantation of 10B and 11B into (100) silicon in channel and in random direction Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1993 ), S. 659-662 ISSN: 0168-583X 10.1016/0168-583X(93)96203-O Frey L. , Ergele W. , Falter T. , Gong L. , Ryssel H. :Analysis of microstructured samples by focused ion beam sample preparation Microelectronic Engineering 21 1993 ), S. 375-378 ISSN: 0167-9317 10.1016/0167-9317(93)90095-M Gong L. , Frey L. , Bogen S. , Ryssel H. :A novel delineation technique for 2D-profiling of dopants in crystalline silicon Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 74 1993 ), S. 186-190 ISSN: 0168-583X 10.1016/0168-583X(93)95040-C Kasko I. , Dehm C. , Frey L. , Ryssel H. :Effect of ion-beam mixing temperature on cobalt silicide formation Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1993 ), S. 786-789 ISSN: 0168-583X 10.1016/0168-583X(93)90682-V Kroninger F. , Streckfuss N. , Frey L. , Falter T. , Ryzlewicz C. , Pfitzner L. , Ryssel H. :Application of advanced contamination analysis for qualification of wafer handling systems and chucks Applied Surface Science 63 1993 ), S. 93-98 ISSN: 0169-4332 10.1016/0169-4332(93)90070-R Ryssel H. , Frey L. , Streckfuss N. , Schork R. , Kroninger F. , Falter T. :Contamination control and ultrasensitive chemical analysis Applied Surface Science 63 1993 ), S. 79-87 ISSN: 0169-4332 10.1016/0169-4332(93)90068-M 1992 Antos L. , Gyulai J. , Khanh N. , Frey L. :End-of-range disorder influenced by inherent oxygen in silicon Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 71 1992 ), S. 399-405 ISSN: 0168-583X 10.1016/0168-583X(92)95357-W Frey L. , Bogen S. , Gong L. , Jung W. , Ryssel H. , Gyulai J. :High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 62 1992 ), S. 410-415 ISSN: 0168-583X 10.1016/0168-583X(92)95267-U Frey L. , Kroninger F. , Streckfusse N. , Ryssel H. , Margail J. :Characterization of metal impurities in silicon-on-insulator material Materials Science and Engineering B-Advanced Functional Solid-State Materials 12 1992 ), S. 195-198 ISSN: 0921-5107 10.1016/0921-5107(92)90285-H Gong L. , Bogen S. , Frey L. , Jung W. , Ryssel H. :Simulation of high energy implantation profiles in crystalline silicon Microelectronic Engineering 1992 ), S. 495-498 ISSN: 0167-9317 10.1016/0167-9317(92)90482-7 Streckfusse N. , Frey L. , Zielonka G. , Kroninger F. , Ryzlewicz C. , Ryssel H. :Analysis of trace metals on silicon surfaces Fresenius Zeitschrift für Analytische Chemie 343 1992 ), S. 765-768 ISSN: 0016-1152 10.1007/BF00633562 1991
