Publikationen
2024 Guiot E., Allibert F., Leib J., Becker T., Drouin A., Schwarzenbach W.:SiC engineered substrate: increasing SiC MOSFETs current density from device to module level 39th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2024 10.1109/APEC48139.2024.10509052 Cornigli D. , Schlichting H. , Becker T. , Larcher L. , Erlbacher T. , Pešić M. :Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements Solid State Phenomena 361 2024 ), S. 93-98 ISSN: 1012-0394 10.4028/p-jbV5Vq Ghazal R. :Analyse und Modellierung mikrospektrometrischer Messungen an Dünnschichtsystemen unter Einsatz von Polarisationsoptiken 2024 )Hack M. , Seidel L. , Wanitzek M. , Oehme M. , Schulze J. , Schwarz D. :Utilizing direct Zener tunneling in Germanium for cryogenic quantum applications Materials Science in Semiconductor Processing 172 2024 ), Art.Nr.: 108057 ISSN: 1369-8001 10.1016/j.mssp.2023.108057 Hoffmeister D. , Finger S. , Fiedler L. , Ma TC. , Körner A. , Zlatar M. , Fritsch B. , Bodnar KW. , Carl S. , Götz A. , Zubiri BA. , Will J. , Spiecker E. , Cherevko S. , Freiberg A. , Mayrhofer K. , Thiele S. , Hutzler A. , van Pham C. :Photodeposition-Based Synthesis of TiO2@IrOx Core–Shell Catalyst for Proton Exchange Membrane Water Electrolysis with Low Iridium Loading Advanced Science 2024 )ISSN: 2198-3844 10.1002/advs.202402991 Joch D. , Lang T. , Sanctis S. , Jank MP. :Simulation-Guided Analysis towards Trench Depth Optimization for Enhanced Flexibility in Stretch-Free, Shape-Induced Interconnects for Flexible Electronics Materials 17 2024 ), Art.Nr.: 3849 ISSN: 1996-1944 10.3390/ma17153849 Joch D. , Lehninger D. , Sunil A. , Sanctis S. , Lang T. , Zeltner J. , Wartenberg P. , Seidel K. , Jank MP. :Precise Compensation of Device Variability in IGZO-based Ferroelectric ThinFilm Transistors for Enhanced Transparent Display Performance International Symposium, Seminar, and Exhibition, Display Week 2024 (San Jose, CA, USA 12. Mai 2024 - 17. Mai 2024 )In: Digest of Technical Papers - SID International Symposium 2024 10.1002/sdtp.17463 Ley M. , Dick J. , Schulze J. :Ab Initio Calculations to Determine Tunneling Parameters for 4H-SiC Tunneling Field-Effect Transistor Simulations 47th ICT and Electronics Convention, MIPRO 2024 (Opatija, HRV 20. Mai 2024 - 24. Mai 2024 )In: Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Dragan Cisic, Pavle Ergovic, Tihana Galinac Grbac, Vera Gradisnik, Stjepan Gros, Andrej Jokic, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Marko Svaco, Edvard Tijan, Neven Vrcek, Boris Vrdoljak (Hrsg.): 2024 47th ICT and Electronics Convention, MIPRO 2024 - Proceedings 2024 10.1109/MIPRO60963.2024.10569785 Okeil H. , Erlbacher T. , Wachutka G. :Very High Temperature Hall Sensors in a Wafer-Scale 4H-SiC Technology Advanced Materials Technologies 2024 )ISSN: 2365-709X 10.1002/admt.202400046 Popp L. , Kampe P. , Fritsch B. , Hutzler A. , Poller MJ. , Albert J. , Schühle P. :Supported Ruthenium Phosphide as a Promising Catalyst for Selective Hydrogenation of Sugars European Journal of Inorganic Chemistry 2024 )ISSN: 1434-1948 10.1002/ejic.202400117 Schimmel S. , Tomida D. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. :Transition from etch-back to growth conditions during ammonothermal growth of GaN – a transient numerical model for convective flow and temperature distribution in a retrograde solubility configuration GaN Marathon (Verona 9. Juni 2024 - 12. Juni 2024 )Schraml M. , Rommel M. , Papathanasiou N. , Erlbacher T. :Device Modeling of 4H-SiC PIN Photodiodes with Shallow Implanted Al Emitters for VUV Sensor Applications Key Engineering Materials 984 2024 ), S. 55-62 ISSN: 1013-9826 10.4028/p-T0xLa9 Schwarberg J. , Karhu R. , Kallinger B. , Rommel M. , Schmidt R. , Schulze J. :Investigation of CMOS Single Process Steps on 4H-SiC a-Plane Wafers for Quantum Applications 47th ICT and Electronics Convention, MIPRO 2024 (Opatija 20. Mai 2024 - 24. Mai 2024 )In: Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Dragan Cisic, Pavle Ergovic, Tihana Galinac Grbac, Vera Gradisnik, Stjepan Gros, Andrej Jokic, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Marko Svaco, Edvard Tijan, Neven Vrcek, Boris Vrdoljak (Hrsg.): 2024 47th ICT and Electronics Convention, MIPRO 2024 - Proceedings 2024 10.1109/MIPRO60963.2024.10569589 Seidel L. , Liu T. , Concepcion O. , Spirito D. , Benkhelifa A. , Kiyek V. , Schulze J. , Marzban B. , Capellini G. , Witzens J. , Grützmacher D. , Buca D. , Oehme M. :Pulse tunable SiGeSn/GeSn multi-quantum-well microdisk lasers Metamaterials, Metadevices, and Metasystems 2024 (San Diego, CA, USA 18. August 2024 - 22. August 2024 )In: Nader Engheta, Mikhail A. Noginov, Nikolay I. Zheludev, Nikolay I. Zheludev (Hrsg.): Proceedings of SPIE - The International Society for Optical Engineering 2024 10.1117/12.3028016 Stolzke T. , Schwarz J. , März M. :Simplifying Random Particle Structures within Soft Magnetic Composite Materials for the Optimization of 3D-FEM Simulations IEEE Transactions on Magnetics 2024 ), S. 1-1 ISSN: 0018-9464 10.1109/TMAG.2024.3434611 Sun J. , Fritsch B. , Körner A. , Taherkhani M. , Park C. , Wang M. , Hutzler A. , Woehl TJ. :Discovery of Molecular Intermediates and Nonclassical Nanoparticle Formation Mechanisms by Liquid Phase Electron Microscopy and Reaction Throughput Analysis Small Structures 2024 )ISSN: 2688-4062 10.1002/sstr.202400146 Wanitzek M. , Hack M. , Schwarz D. , Schulze J. , Oehme M. :Low-temperature performance of GeSn-on-Si avalanche photodiodes toward single-photon detection Materials Science in Semiconductor Processing 176 2024 ), Art.Nr.: 108303 ISSN: 1369-8001 10.1016/j.mssp.2024.108303 Wanitzek M. , Schwarz D. , Schulze J. , Oehme M. :Bandwidth enhancement in GeSn-on-Si avalanche photodiodes with a 60 GHz gain-bandwidth-product 2024 IEEE Silicon Photonics Conference, SiPhotonics 2024 (Tokyo, JPN 15. April 2024 - 18. April 2024 )In: IEEE International Conference on Group IV Photonics GFP 2024 10.1109/SiPhotonics60897.2024.10543351 Wostatek T. :Nitride semiconductor crystal growth at FAU Erlangen-Nürnberg 12th Annual Meeting of the Young Crystal Growth (Erlangen 5. März 2024 - 5. März 2024 )Wostatek T. , Chirala VYMR. , Stoddard N. , Civas EN. , Pimputkar S. , Schimmel S. :Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential Materials 2024 )ISSN: 1996-1944 10.3390/ma17133104 2023 Baierhofer D. , Thomas B. , Staiger F. , Marchetti B. , Förster C. , Erlbacher T. :Correlation of Extended Defects with Electrical Yield of SiC MOSFET Devices Defect and Diffusion Forum 426 2023 ), S. 11-16 ISSN: 1012-0386 10.4028/p-i82158 Guiot E., Allibert F., Leib J., Becker T., Erlbacher T.:Improved Power Cycling Reliability through the use of SmartSiC ™ Engineered Substrate for Power Devices 2023 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2023 10.30420/566091210 Guiot E., Allibert F., Leib J., Becker T., Schwarzenbach W., Hellinger C., Erlbacher T., Rouchier S.:Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device Through the Use of SmartSiC™ Substrate Trans Tech Publications Ltd 2023 10.4028/p-777hqg Schlichting H., Lim M., Becker T., Kallinger B., Erlbacher T.:The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability Trans Tech Publications Ltd 2023 10.4028/p-4i3rhf Berkmann F. , Steuer O. , Ganss F. , Prucnal S. , Schwarz D. , Fischer IA. , Schulze J. :Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx Optical Materials Express 13 2023 ), S. 752-763 ISSN: 2159-3930 10.1364/OME.479637 Couasnon T. , Fritsch B. , Jank MP. , Blukis R. , Hutzler A. , Benning LG. :Goethite Mineral Dissolution to Probe the Chemistry of Radiolytic Water in Liquid-Phase Transmission Electron Microscopy Advanced Science 10 2023 ), Art.Nr.: 2301904 ISSN: 2198-3844 10.1002/advs.202301904 Fritsch B. , Körner A. , Couasnon T. , Blukis R. , Taherkhani M. , Benning LG. , Jank M. , Spiecker E. , Hutzler A. :Tailoring the Acidity of Liquid Media with Ionizing Radiation: Rethinking the Acid-Base Correlation beyond pH Journal of Physical Chemistry Letters 2023 ), S. 4644-4651 ISSN: 1948-7185 10.1021/acs.jpclett.3c00593 Geiling J. , Wagner L. , Auer F. , Ortner F. , Nuß A. , Seyfried R. , Stammberger F. , Steinberger M. , Bösmann A. , Öchsner R. , Wasserscheid P. , Graichen K. , März M. , Preuster P. :Operational experience with a liquid organic hydrogen carrier (LOHC) system for bidirectional storage of electrical energy over 725 h Journal of Energy Storage 72 2023 ), Art.Nr.: 108478 ISSN: 2352-152X 10.1016/j.est.2023.108478 Hutzler A. , Fritsch B. , Matthus CD. , Jank MP. , Rommel M. :Author Correction: Highly accurate determination of heterogeneously stacked Van-der-Waals materials by optical microspectroscopy (Scientific Reports, (2020), 10, 1, (13676), 10.1038/s41598-020-70580-3) Scientific Reports 13 2023 ), Art.Nr.: 1410 ISSN: 2045-2322 10.1038/s41598-023-28605-0 Kolesnik-Gray M. , Meingast L. , Siebert M. , Unbehaun T. , Huf T. , Ellrott G. , Abellan Saez G. , Wild S. , Lloret Segura VJ. , Mundloch U. , Schwarz J. , Niebauer M. , Szabo M. , Rommel M. , Hutzler A. , Hauke F. , Hirsch A. , Krstic V. :Unconventional conductivity increase in multilayer black phosphorus npj 2D Materials and Applications 7 2023 ), Art.Nr.: 21 ISSN: 2397-7132 10.1038/s41699-023-00384-2 Marhenke J. , Dirnecker T. , Vogel N. , Rommel M. :Stiffness influence on particle separation in polydimethylsiloxane-based deterministic lateral displacement devices Microfluidics and Nanofluidics 27 2023 ), Art.Nr.: 76 ISSN: 1613-4982 10.1007/s10404-023-02685-w Pham A. :Systemübergreifende modulare Charakterisierung von Dünnschichtsystemen mittels Reflexionsmessungen 2023 )Schimmel S. , Tomida D. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. :Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN—Transition from Dissolution Stage to Growth Stage Conditions Materials 16 2023 ), S. 2016 ISSN: 1996-1944 10.3390/ma16052016 Schlichting H. , Lim M. , Becker T. , Kallinger B. , Erlbacher T. :The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability Materials Science Forum 1090 2023 ), S. 127-133 ISSN: 0255-5476 10.4028/p-4i3rhf Schmidt R. :Einzelprozessentwicklung für die Herstellung von Halbleiterbauelementen auf 4H-SiC a-Plane Substraten 2023 )Schraml M. , Papathanasiou N. , May A. , Weiss T. , Erlbacher T. :Towards SiC-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters 10.4028/p-959z1t Schwarz J. , Niebauer M. , Kolesnik-Gray M. , Szabo M. , Baier L. , Chava P. , Erbe A. , Krstic V. , Rommel M. , Hutzler A. :Correlating Optical Microspectroscopy with 4×4 Transfer Matrix Modeling for Characterizing Birefringent Van der Waals Materials Small Methods 2023 )ISSN: 2366-9608 10.1002/smtd.202300618 Seidel L. , Liu T. , Marzban B. , Kiyek V. , Schulze J. , Capellini G. , Witzens J. , Buca D. , Oehme M. :SiGeSn/GeSn Multi Quantum Wells Light Emitting Diodes with a Negative Differential Resistance 2023 IEEE Silicon Photonics Conference, SiPhotonics 2023 (Washington, DC 4. April 2023 - 7. April 2023 )In: IEEE International Conference on Group IV Photonics GFP 2023 10.1109/SiPhotonics55903.2023.10141960 Singh M. , Abdelsamie M. , Li Q. , Kodalle T. , Lee DK. , Arnold S. , Ceratti DR. , Slack JL. , Schwartz CP. , Brabec C. , Tao S. , Sutter-Fella CM. :Effect of the Precursor Chemistry on the Crystallization of Triple Cation Mixed Halide Perovskites Chemistry of Materials 2023 )ISSN: 0897-4756 10.1021/acs.chemmater.3c00799 Sk MR. , Thunder S. , Lehninger D. , Sanctis S. , Raffel Y. , Lederer M. , Jank MPM. , Kaempfe T. , De S. , Chakrabarti B. :Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation ACS Applied Electronic Materials 5 2023 ), S. 812-820 ISSN: 2637-6113 10.1021/acsaelm.2c01357 Völkl A. , Toutouly J. , Drobek D. , Apeleo Zubiri B. , Spiecker E. , Klupp Taylor R. :Gram-Scale Continuous Flow Synthesis of Silver-on-Silica Patchy Nanoparticles with Widely Tunable Resonances for Plasmonics Applications ACS Applied Nano Materials 6 2023 ), S. 10126-10137 ISSN: 2574-0970 10.1021/acsanm.3c00869 Kim S., Byun D.W., Shin H.K., Koo S.M., Erlbacher T., Lim M., Csato C., Förthner J., Rusch O., Ehrensberger K., Kupfer B., Beuer S., Oertel S.:A Modeling of 4H-SiC Super-Junction MOSFETs with Filtered High Energy Implantation Trans Tech Publications Ltd 2023 10.4028/p-hyy2l9 Weißhaupt D. , Funk HS. , Oehme M. , Bloos D. , Berkmann F. , Seidel L. , Fischer IA. , Schulze J. :High mobility Ge 2DHG based MODFETs for low-temperature applications Semiconductor Science and Technology 38 2023 ), Art.Nr.: 035007 ISSN: 0268-1242 10.1088/1361-6641/acb22f 2022 Baierhofer D. , Thomas B. , Staiger F. , Marchetti B. , Foerster C. , Erlbacher T. :Defect reduction in SiC epilayers by different substrate cleaning methods Materials Science in Semiconductor Processing 140 2022 )ISSN: 1369-8001 10.1016/j.mssp.2021.106414 Erlbacher T., Rouchier S., Guiot E., Picun G., Allibert F., Leib J., Becker T., Schwarzenbach W., Drouin A., Béthoux J.M., Widiez J.:Proven Power Cycling Reliability of SmartSiC™ Substrate for Power Devices International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2022 10.30420/565822081 Berkmann F. , Augel L. , Hack M. , Kawaguchi Y. , Weisshaupt D. , Fischer IA. , Schulze J. :Optimization of Fully Integrated Al Nanohole Array-Based Refractive Index Sensors for Use With a LED Light Source IEEE Photonics Journal 14 2022 )ISSN: 1943-0655 10.1109/JPHOT.2022.3177354 Boettcher N. , Takamori T. , Wada K. , Saito W. , Nishizawa SI. , Erlbacher T. :Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 v 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe (Hannover 5. September 2022 - 9. September 2022 )In: 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe 2022 Daneri S. , Kerschbaum A. , Runa E. :One-dimensionality of the minimizers for a diffuse interface generalized antiferromagnetic model in general dimension Journal of Functional Analysis 283 2022 ), Art.Nr.: 109715 ISSN: 0022-1236 10.1016/j.jfa.2022.109715 Dreher V. , Joch D. , Kren H. , Schwarberg J. , Jank MP. :Ultrathin and flexible sensors for pressure and temperature monitoring inside battery cells 2022 IEEE Sensors Conference, SENSORS 2022 (Dallas, TX 30. Oktober 2022 - 2. November 2022 )In: Proceedings of IEEE Sensors 2022 10.1109/SENSORS52175.2022.9967234 Friedrich RP. , Kappes M. , Cicha I. , Tietze R. , Braun C. , Schneider-Stock R. , Nagy R. , Alexiou C. , Janko C. :Optical Microscopy Systems for the Detection of Unlabeled Nanoparticles International Journal of Nanomedicine Volume 17 2022 ), S. 2139-2163 ISSN: 1176-9114 10.2147/IJN.S355007 Fritsch B. , Wu M. , Hutzler A. , Zhou D. , Spruit R. , Vogl L. , Will J. , Pérez Garza H. , März M. , Jank M. , Spiecker E. :Sub-Kelvin thermometry for evaluating the local temperature stability within in situ TEM gas cells Ultramicroscopy 235 2022 ), S. 113494 ISSN: 0304-3991 10.1016/j.ultramic.2022.113494 https://doi.org/10.1088/1361-6528/ab8a8c Fritsch B. , Zech T. , Bruns M. , Körner A. , Khadivianazar S. , Wu M. , Zargar Talebi N. , Virtanen S. , Unruh T. , Jank M. , Spiecker E. , Hutzler A. :Radiolysis‐Driven Evolution of Gold Nanostructures – Model Verification by Scale Bridging In Situ Liquid‐Phase Transmission Electron Microscopy and X‐Ray Diffraction Advanced Science 9 2022 ), Art.Nr.: 2202803 ISSN: 2198-3844 10.1002/advs.202202803 https://onlinelibrary.wiley.com/doi/10.1002/advs.202202803 Jena S. :Optimierung von Lithographieprozessen auf Germaniumoberflächen zur Herstellung von Nanodrähten 2022 )Marhenke J. , Dirnecker T. , Vogel N. , Rommel M. :Increasing flow rates in polydimethylsiloxane-based deterministic lateral displacement devices for sub-micrometer particle separation Microfluidics and Nanofluidics 27 2022 ), Art.Nr.: 2 ISSN: 1613-4982 10.1007/s10404-022-02609-0 Marzban B. , Seidel L. , Kiyek V. , Liu T. , Zöllner M. , Ikonic Z. , Capellini G. , Buca D. , Schulze J. , Oehme M. , Witzens J. :Modeling and design of an electrically pumped SiGeSn microring laser Silicon Photonics XVII 2022 (Online 20. Februar 2022 - 24. Februar 2022 )In: Graham T. Reed, Andrew P. Knights (Hrsg.): Proceedings of SPIE - The International Society for Optical Engineering 2022 10.1117/12.2609537 Marzban B. , Seidel L. , Liu T. , Kiyek V. , Wu K. , Zollner MH. , Ikonik Z. , Schulze J. , Grutzmacher D. , Capellini G. , Oehme M. , Witzens J. , Buca D. :Electrically pumped SiGeSn microring lasers 2022 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2022 (Cabo San Lucas, MEX 11. Juli 2022 - 13. Juli 2022 )In: 2022 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2022 - Proceedings 2022 10.1109/SUM53465.2022.9858260 May A. , Rommel M. , Beuer S. , Erlbacher T. :Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC Materials Science Forum 1062 2022 ), S. 185-189 ISSN: 0255-5476 10.4028/p-36s1w4 Muthumbi AK. :Defect detection in nano-imprint stamps with deep learning and low resolution microscope 2022 )Schimmel S. , Salamon M. , Tomida D. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. :High Energy Computed Tomography as a Tool for Validation of Numerical Simulations of Ammonothermal Crystal Growth of GaN 8th International Workshop on Crystal Growth Technology (Berlin 29. Mai 2022 - 2. Juni 2022 )Schimmel S. , Salamon M. , Tomida D. , Kobelt I. , Heinlein L. , Kimmel AC. , Steigerwald T. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. , Schlücker E. , Wellmann P. :In Situ Monitoring Technologies as Prospective Validation Tools for Numerical Simulations of Ammonothermal Crystal Growth 7th European Conference on Crystal Growth (Paris 25. Juli 2022 - 27. Juli 2022 )Schimmel S. , Salamon M. , Tomida D. , Neumeier S. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. :High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors-A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN Materials 15 2022 ), S. 6165 ISSN: 1996-1944 10.3390/ma15176165 Schimmel S. , Sun W. , Dropka N. :Artificial Intelligence for Crystal Growth and Characterization Crystals 12 2022 ), S. 1232 ISSN: 2073-4352 10.3390/cryst12091232 Schimmel S. , Tomida D. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. :Temperature field and fluid flow in ammonothermal growth of GaN during etch-back and crystal growth for a retrograde solubility configuration International Workshop on Nitride Semiconductors (Berlin 9. Oktober 2022 - 14. Oktober 2022 )Sedova V. :Modeling of thick photoresist for grayscale lithography application 2022 )Seidel L. , Schafer S. , Oehme M. , Buca D. , Capellini G. , Schulze J. , Schwarz D. :Electroluminescence of SixGe1-x-ySny / Ge1-ySny pin-Diodes Grown on a GeSn Buffer 48th IEEE European Solid State Circuits Conference, ESSCIRC 2022 (Milan, ITA 19. September 2022 - 22. September 2022 )In: ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings 2022 10.1109/ESSCIRC55480.2022.9911458 Szabo M. :Optimierung und Charakterisierung von 2D-Materialien für die Passivierung von schwarzem Phosphor 2022 )Wanitzek M. , Oehme M. , Spieth C. , Schwarz D. , Seidel L. , Schulze J. :GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection 48th IEEE European Solid State Circuits Conference, ESSCIRC 2022 (Milan, ITA 19. September 2022 - 22. September 2022 )In: ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings 2022 10.1109/ESSCIRC55480.2022.9911363 2021 Awad A. , Brendel P. , Evanschitzky P. , Woldeamanual DS. , Rosskopf A. , Erdmann A. :Accurate prediction of EUV lithographic images and 3D mask effects using generative networks Journal of Micro-Nanolithography MEMS and MOEMS 20 2021 )ISSN: 1932-5150 10.1117/1.JMM.20.4.043201 Fritsch B. , Hutzler A. , Wu M. , Khadivianazar S. , Vogl L. , Jank MPM. , März M. , Spiecker E. :Accessing local electron-beam induced temperature changes during in situ liquid-phase transmission electron microscopy Nanoscale Advances 3 2021 ), S. 2466 - 2474 ISSN: 2516-0230 10.1039/D0NA01027H https://pubs.rsc.org/en/content/articlelanding/2021/NA/D0NA01027H Fritsch B. , Hutzler A. , Wu M. , Vogl L. , Jank MP. , März M. , Spiecker E. :Beam-induced heating at low electron fluxes during liquid phase transmission electron microscopy Microscopy and Microanalysis 27 2021 ), S. 1040-1042 ISSN: 1431-9276 10.1017/S1431927621003937 Fritsch B. , Hutzler A. , Wu M. , Vogl L. , Jank MPM. , März M. , Spiecker E. :Evaluating local temperature changes during liquid cell transmission electron microscopy by in situ parallel beam electron diffraction Virtual Early Career European Microscopy Congress 2020 (Kopenhagen 24. November 2020 - 26. 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The Electrochemical Society, Inc. 2005 , S. 873 Müller R. , Künecke U. , Weingärtner R. , Schmitt H. , Desperrier P. , Wellmann P. :High Al-doping of SiC using a modified PVT (M-PVT) growth set-up Materials Science Forum 483 2005 ), S. 31-34 ISSN: 0255-5476 10.4028/www.scientific.net/MSF.483-485.31 Rambach M. , Bauer A. , Frey L. , Friedrichs P. , Ryssel H. :Annealing of Aluminium Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing Materials Science Forum 483-485 2005 ), S. 483 ISSN: 0255-5476 Rambach M. , Schmid F. , Krieger M. , Frey L. , Bauer A. , Pensl G. , Ryssel H. :Implantation and Annealing of Aluminum in 4H Silicon Carbide Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237 2005 ), S. 68-71 ISSN: 0168-583X 10.1016/j.nimb.2005.04.079 Rommel M. , Groß M. , Ettinger A. , Lemberger M. , Bauer A. , Frey L. , Ryssel H. :Characterization of interface state densitiesby photocurrent analysis: Comparison of results for different insulator layers Microelectronic Engineering 80 2005 ), S. 50-53 ISSN: 0167-9317 10.1016/j.mee.2005.04.042 Rommel M. , Groß M. , Frey L. , Bauer A. , Ryssel H. :Wafer scale characterization of interface state densities without test structures by photocurrent analysis 35th European Solid State Device Research Conference (Grenoble https://www.scopus.com/record/display.uri?eid=2-s2.0-31744443828&origin=inward Ryssel H. , Ullrich M. , Burenkov A. :Ion Sputtering at Grazing Incidence for SIMS-Analysis Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 228 2005 ), S. 373-377 ISSN: 0168-583X 10.1016/j.nimb.2004.10.073 Schmitt H. , Müller R. , Maier M. , Winnacker A. , Wellmann P. :Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals Materials Science Forum 483 2005 ), S. 445-448 ISSN: 0255-5476 10.4028/www.scientific.net/MSF.483-485.445 2004 Frey L. , Rambach M. , Weiss R. , Bauer A. , Ryssel H. :Investigation of rapid thermal annealed pn-junctions in SiC 2004 https://www.scopus.com/record/display.uri?eid=2-s2.0-8744264042&origin=inward Fühner T. , Erdmann A. , Farkas R. , Tollkühn B. , Kókai G. :Genetic Algorithms to Improve Mask and Illumination Geometries in Lithographic Imaging Systems 1st European Workshop on Hardware Optimisation (EVOHOT2004) (Coimbra 3. April 2004 - 5. April 2004 )In: Günther R. Raidl, Stefano Cagnoni, Jürgen Branke, David Wolfe Corne, Rolf Drechsler, Yaochu Jin, Colin G. Johnson, Penousal Machado, Elena Marchiori, Franz Rothlauf, George D. Smith, Giovanni Squillero (Hrsg.): Applications of Evolutionary Computing - EvoWorkshops 2004: EvoBIO, EvoCOMNET, EvoHOT, EvoISAP, EvoMUSART, and EvoSTOC , Berlin Heidelberg 2004 10.1007/978-3-540-24653-4_22 Lehrer C. , Frey L. , Petersen S. , Ryssel H. , Schäfer M. , Sulzbach T. :Integration of field emitters into scanning probe microscopy sensors using focused ion and electron beams Journal of Vacuum Science & Technology B 22 2004 ), S. 1402-1406 ISSN: 1071-1023 https://www.scopus.com/record/display.uri?eid=2-s2.0-3242722353∨igin=inward Lemberger M. , Paskaleva A. , Zürcher S. , Bauer A. , Frey L. , Ryssel H. :Electrical characterization and reliability aspects of zirconium silicate films obtained from novel MOCVD precursors Microelectronic Engineering 72 2004 ), S. 315-320 ISSN: 0167-9317 10.1016/j.mee.2004.01.010 Nguyen PH. , Lorenz J. , Baer E. , Ryssel H. :Modeling of Chemical-Mechanical Polishing on Patterned Wafers as Part of Integrated Topography Process Simulation MAM2004 (Leuven, Belgium 7. 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März 2004 )In: Microelectronic Engineering 2004 10.1016/j.mee.2004.07.018 http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6V0W-4D1V29P-2-C&_cdi=5657&_user=746735&_orig=browse&_coverDate=10/01/2004&_sk=999239998&view=c&wchp=dGLbVlb-zSkzk&md5=4039dffb5d8e4b57dba393cf896acaef&ie=/sdarticle.pdf Paskaleva A. , Bauer A. , Lemberger M. , Zürcher S. :Physical and Electrical Properties of Thin High-k HfxTiySizO Film With varying Hf to Ti Ratios 10.1063/1.1702101 Schmidt C. , Petrik P. , Schneider C. , Fried M. , Löhner T. , Bársony I. , Gyulai J. , Ryssel H. :Optical Characterization of Ferroelectric Strontium-Bismut-Tantalate (SBT) Thin Films Thin Solid Films 455-456 2004 ), S. 495-499 ISSN: 0040-6090 10.1016/j.tsf.2003.11.248 Weiss R. , Frey L. , Ryssel H. :Modeling of the influence of Schottky barrier inhomogeneities on SiC diode characteristics 2004 https://www.scopus.com/record/display.uri?eid=2-s2.0-8644276383&origin=inward Yasenov NN. , Berberich SE. , Frey L. , Ryssel H. :Design, fabrication and characterization of a microactuator for nebulization of fluids 2003 Bauer A. , Rambach M. , Frey L. , Weiss R. , Rupp R. , Friedrichs P. , Schörner R. , Peters DP. :Surface Properties and Electrical Characteristics of Rapid Thermal Annealed 4H-SiC 2003 https://www.scopus.com/record/display.uri?eid=2-s2.0-18744421066&origin=inward Berberich SE. , Bauer A. , Frey L. , Ryssel H. :Trench sidewall doping for lateral power devices 33rd European Solid-State Device Research Conference, ESSDERC 2003 10.1109/ESSDERC.2003.1256893 Dirnecker T. , Frey L. , Bauer A. , Ryssel H. , Ruf A. , Henke D. , Beyer A. :Influence of Antenna Shape and Resist Patterns on Charging Damage During Ion Implantation Ion Implantation Technology (Taos, New Mexico, USA In: IEEE Proc. on Ion Implantation Technology-2002 , Piscataway 2003 10.1109/IIT.2002.1257996 Erdmann A. , Farkas R. , Fühner T. , Tollkühn B. , Kókai G. :Mask and Source Optimization for Lithographic Imaging Systems Wave-Optical Systems Engineering II (San Diego, CA 31. 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(Hrsg.):Erlanger Berichte Mikroelektronik Aachen 2002 ISBN: 3-8322-0960-3 Fujita M. , Tajima J. , Nakagawa T. , Abo S. , Kinomura A. , Pászti F. , Takai M. , Schork R. , Frey L. , Ryssel H. :Development of enhanced depth-resolution technique for shallow dopant profiles Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 190 2002 ), S. 26-33 ISSN: 0168-583X 10.1016/S0168-583X(01)01248-4 Häublein V. , Frey L. , Ryssel H. :ENCOTION - A new simulation tool for energetic contamination analysis 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 10.1109/IIT.2002.1257977 Häublein V. , Frey L. , Ryssel H. , Walser H. :Investigation of lanthanum contamination from a lanthanated tungsten ion source 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 10.1109/IIT.2002.1258011 Jank M. , Frey L. , Bauer A. , Ryssel H. :Investigation of implantation-induced defects in thin gate oxides using 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Ramirez A. :Investigation of molybdenum contamination in 11B+ and 31P+ implants 2000 13th International Conference on Ion Implantation Technology, IIT 2000 (Alpbach 10.1109/.2000.924252 Jank M. , Lemberger M. , Frey L. , Ryssel H. :Gate oxide damage due to through the gate implantation in MOS-structures with ultrathin and standard oxides 2000 13th International Conference on Ion Implantation Technology, IIT 2000 (Alpbach 10.1109/IIT.2000.924101 Kröner F. , Schork R. , Frey L. , Burenkov A. , Ryssel H. :Phosphorus Ion Shower Implantation for special power IC applications 2000 13th International Conference on Ion Implantation Technology, IIT 2000 (Alpbach 10.1109/.2000.924191 Lehrer C. , Frey L. , Petersen S. , Mizutam M. , Takai M. , Ryssel H. :Defects and gallium - Contamination during focused ion beam micro machining 2000 13th International Conference on Ion Implantation Technology, IIT 2000 (Alpbach 10.1109/.2000.924248 Tajima J. , Park Y. , Fujita M. , Takai M. , Schork R. , Frey L. , Ryssel H. :Enhanced depth-resolution analysis with medium energy ion scattering (meis) for shallow junction profiling 2000 13th International Conference on Ion Implantation Technology, IIT 2000 (Alpbach 10.1109/.2000.924225 Weiland R. , Boit C. , Dawes N. , Dzieslaty A. , Demm E. , Ebersberger B. , Frey L. , Geyer S. , Hirsch A. , Lehrer C. , Meis P. , Kamolz M. , Lezec H. , Rettenmaier H. , Tlttes W. , Trefchler R. , Zimmermann H. :Wafer Conserving Full Range Construction Analysis for IC Fabrication and Process Development Based on FIB /Dual Beam Inline Application Proceedings of the 26th International Symposium for Testing and Failure Analysis (Bellevue, WA In: Proceedings of the 26th International Symposium for Testing and Failure Analysis 2000 https://www.scopus.com/record/display.uri?eid=2-s2.0-10744227841∨igin=inward Yavas O. , Ochiai C. , Takai M. , Park Y. , Lehrer C. , Lipp S. , Frey L. , Ryssel H. , Hosono A. , Okuda S. :Field emitter array fabricated using focused ion and 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Conference on Chemical Vapour Deposition ((EUROCVD12) , Les Ulis Cedex A, France 1999 https://www.scopus.com/record/display.uri?eid=2-s2.0-0033188109&origin=inward 1998 Montandon C. , Bourenkov A. , Frey L. , Pichler P. , Biersack JP. :Distortion of sims profiles due to ion beam mixing: Shallow arsenic implants in silicon Radiation Effects and Defects in Solids 145 1998 ), S. 213-223 ISSN: 1042-0150 10.1080/10420159808225765 Park Y. , Takai M. , Lehrer C. , Frey L. , Ryssel H. :Microprobe analysis of Pt films deposited by beam induced reaction Japanese Journal of Applied Physics 37 1998 ), S. 7042-7046 ISSN: 0021-4922 https://www.scopus.com/record/display.uri?eid=2-s2.0-4243307043&origin=inward Park Y. , Takai M. , Nagai T. , Kishimoto T. , Seidl A. , Lehrer C. , Frey L. , Ryssel H. :Microanalysis of masklessly fabricated micro structures using nuclear microprobe Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1998 ), S. 373-378 ISSN: 0168-583X 10.1016/S0168-583X(97)00709-X 1997 Biró L. , Gyulai J. , Havancsák K. , Didyk A. , Bogen S. , Frey L. , Ryssel H. :New method based on atomic force microscopy for in-depth characterization of damage in Si irraadiate with 209 MeV Kr Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 122 1997 ), S. 559-562 ISSN: 0168-583X 10.1016/S0168-583X(96)00662-3 Biró L. , Gyulai J. , Havancsák K. , Didyk A. , Frey L. , Ryssel H. :In-depth damage distribution by scanning probe methods in targets irradiated with 200 MeV ions Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1997 ), S. 32-37 ISSN: 0168-583X 10.1016/S0168-583X(96)01106-8 Frey L. , Stoemenos J. , Schork R. , Nejim A. , Hemment P. :Synthesis of SiC by high temperature C+ implantation into SiO2: The role of Si/SiO2 interface Journal of The Electrochemical Society 144 1997 ), S. 4314-4320 ISSN: 0013-4651 10.1149/1.1838184 Park Y. , Takai M. , Nagai T. , Kishimoto T. , Lehrer C. , Frey L. , Ryssel H. :Microanalysis of impurity contamination in masklessly etched area using focused ion beam Japanese Journal of Applied Physics 36 1997 ), S. 7712-7716 ISSN: 0021-4922 https://www.scopus.com/record/display.uri?eid=2-s2.0-0031346547&origin=inward Saggio M. , Montandon C. , Bourenkov A. , Frey L. , Pichler P. :Distortion of sims profiles due to ion beam mixing Radiation Effects and Defects in Solids 141 1997 ), S. 37-52 ISSN: 1042-0150 10.1080/10420159708211555 Schwenke H. , Knoth J. , Fabry L. , Pahlke S. , Scholz R. , Frey L. :Measurement of shallow arsenic impurity profiles in semiconductor silicon using time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence spectrometry Journal of The Electrochemical Society 144 1997 ), S. 3979-3983 ISSN: 0013-4651 10.1149/1.1838122 1996 Bogen S. , Herden M. , Frey L. , Ryssel H. :Reduction of lateral parasitic current flow by buried recombination layers formed by high energy implantation of C or O into silicon Proceedings of the 1996 11th International Conference on Ion Implantation Technology (Austin, TX, USA In: Ishida E.; Mehta S.; Banerjee S.; Current M.; Smith T.C.; et al (Hrsg.): Proceedings of the 1996 11th International Conference on Ion Implantation Technology , Piscataway, NJ, United States 1996 https://www.scopus.com/record/display.uri?eid=2-s2.0-0030373286∨igin=inward Frey L. , Bogen S. , Herden M. , Ryssel H. :Deep implants for semiconductor device applications Radiation Effects and Defects in Solids 140 1996 ), S. 87-101 ISSN: 1042-0150 10.1080/10420159608212943 Jiao G. , Bogen S. , Frey L. , Ryssel H. :A multi-laminate wire mesh ionizer for a Cs sputter negative ion source Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 382 1996 ), S. 332-334 ISSN: 0168-9002 10.1016/S0168-9002(96)00701-2 Lipp S. , Frey L. , Lehrer C. , Demm E. , Pauthner S. , Ryssel H. :A comparison of focused ion beam and electron beam induced deposition processes Microelectronics Reliability 36 1996 ), S. 1779-1782 ISSN: 0026-2714 https://www.scopus.com/record/display.uri?eid=2-s2.0-0030274008∨igin=inward Lipp S. , Frey L. , Lehrer C. , Frank B. , Demm E. , Pauthner S. , Ryssel H. :Tetramethoxysilane as a precursor for focused ion beam and electron beam assisted insulator (SiOx) deposition Journal of Vacuum Science & Technology B 14 1996 ), S. 3920-3923 ISSN: 1071-1023 https://www.scopus.com/record/display.uri?eid=2-s2.0-0000353753∨igin=inward Lipp S. , Frey L. , Lehrer C. , Frank B. , Demm E. , Ryssel H. :Investigations on the topology of structures milled and etched by focused ion beams Journal of Vacuum Science & Technology B 14 1996 ), S. 3996-3999 ISSN: 1071-1023 https://www.scopus.com/record/display.uri?eid=2-s2.0-0001398692∨igin=inward 1995 Bogen S. , Körber K. , Gong L. , Frey L. , Ryssel H. :Comparison of retrograde and conventional p-wells in regard of latch-up susceptibility Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 96 1995 ), S. 411-415 ISSN: 0168-583X 10.1016/0168-583X(94)00530-3 Frey L. , Ryssel H. , Bogen S. , Hobler G. , Simionescu A. :Model for the electronic stopping of channeled ions in silicon around the stopping power maximum Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 106 1995 ), S. 47-50 ISSN: 0168-583X 10.1016/0168-583X(95)00676-1 Gong L. , Petersen S. , Frey L. , Ryssel H. :Improved delineation technique for two dimensional dopant profiling Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 96 1995 ), S. 133-138 ISSN: 0168-583X 10.1016/0168-583X(94)00472-2 Lipp S. , Frey L. , Franz G. , Demm E. , Petersen S. , Ryssel H. :Local material removal by focused ion beam milling and etching Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 106 1995 ), S. 630-635 ISSN: 0168-583X 10.1016/0168-583X(95)00778-4 1994 Biró L. , Gyulai J. , Bogen S. , Frey L. , Ryssel H. :Investigation of the effect of altered defect structure produced by photon assisted implantation on the diffusion of As in silicon during thermal annealing Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 85 1994 ), S. 925-928 ISSN: 0168-583X 10.1016/0168-583X(94)95952-8 Frey L. , Pichler P. , Kasko I. , Thies I. , Lipp S. , Streckfuss N. , Gong L. , Ryssel H. :Practical aspects of ion beam analysis of semiconductor structures Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 85 1994 ), S. 356-362 ISSN: 0168-583X 10.1016/0168-583X(94)95844-0 Gong L. , Bogen S. , Frey L. , Jung W. , Ryssel H. :Analytical description of high energy implantation profiles of boron and phosphorus into crystalline silicon Radiation Effects and Defects in Solids 127 1994 ), S. 385-395 ISSN: 1042-0150 10.1080/10420159408221046 Gyulai J. , Ryssel H. , Biró L. , Frey L. , Kuki A. , Kormány T. , Serfozo G. , Khanh N. :Athermal effects in ion implanted layers Radiation Effects and Defects in Solids 127 1994 ), S. 397-404 ISSN: 1042-0150 10.1080/10420159408221047 1993 Biró L. , Gyulai J. , Ryssel H. , Frey L. , Kormány T. , Tuan N. , Horváth z. :Photon assisted implantation (PAI) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1993 ), S. 607-611 ISSN: 0168-583X 10.1016/0168-583X(93)96191-E Bogen S. , Gong L. , Frey L. , Ryssel H. :High energy implantation of 10B and 11B into (100) silicon in channel and in random direction Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1993 ), S. 659-662 ISSN: 0168-583X 10.1016/0168-583X(93)96203-O Frey L. , Ergele W. , Falter T. , Gong L. , Ryssel H. :Analysis of microstructured samples by focused ion beam sample preparation Microelectronic Engineering 21 1993 ), S. 375-378 ISSN: 0167-9317 10.1016/0167-9317(93)90095-M Gong L. , Frey L. , Bogen S. , Ryssel H. :A novel delineation technique for 2D-profiling of dopants in crystalline silicon Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 74 1993 ), S. 186-190 ISSN: 0168-583X 10.1016/0168-583X(93)95040-C Kasko I. , Dehm C. , Frey L. , Ryssel H. :Effect of ion-beam mixing temperature on cobalt silicide formation Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1993 ), S. 786-789 ISSN: 0168-583X 10.1016/0168-583X(93)90682-V Kroninger F. , Streckfuss N. , Frey L. , Falter T. , Ryzlewicz C. , Pfitzner L. , Ryssel H. :Application of advanced contamination analysis for qualification of wafer handling systems and chucks Applied Surface Science 63 1993 ), S. 93-98 ISSN: 0169-4332 10.1016/0169-4332(93)90070-R Ryssel H. , Frey L. , Streckfuss N. , Schork R. , Kroninger F. , Falter T. :Contamination control and ultrasensitive chemical analysis Applied Surface Science 63 1993 ), S. 79-87 ISSN: 0169-4332 10.1016/0169-4332(93)90068-M 1992 Antos L. , Gyulai J. , Khanh N. , Frey L. :End-of-range disorder influenced by inherent oxygen in silicon Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 71 1992 ), S. 399-405 ISSN: 0168-583X 10.1016/0168-583X(92)95357-W Frey L. , Bogen S. , Gong L. , Jung W. , Ryssel H. , Gyulai J. :High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 62 1992 ), S. 410-415 ISSN: 0168-583X 10.1016/0168-583X(92)95267-U Frey L. , Kroninger F. , Streckfusse N. , Ryssel H. , Margail J. :Characterization of metal impurities in silicon-on-insulator material Materials Science and Engineering B-Advanced Functional Solid-State Materials 12 1992 ), S. 195-198 ISSN: 0921-5107 10.1016/0921-5107(92)90285-H Gong L. , Bogen S. , Frey L. , Jung W. , Ryssel H. :Simulation of high energy implantation profiles in crystalline silicon Microelectronic Engineering 1992 ), S. 495-498 ISSN: 0167-9317 10.1016/0167-9317(92)90482-7 Streckfusse N. , Frey L. , Zielonka G. , Kroninger F. , Ryzlewicz C. , Ryssel H. :Analysis of trace metals on silicon surfaces Fresenius Zeitschrift für Analytische Chemie 343 1992 ), S. 765-768 ISSN: 0016-1152 10.1007/BF00633562 1991
